MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
MICROWAVE SEMICONDUCTOR
MICROWAVE SEMICONDUCTOR
MICROWAVE SEMICONDUCTOR
TIM6472-6UL
TIM6472-6UL
TIM6472-6UL
TIM6472-6UL
TECHNICAL DATA
TECHNICAL DATA
TECHNICAL DATA
TECHNICAL DATA
FEATURES
FEATURES
FEATURES
FEATURES
HIGH POWER
BROAD BAND INTERNALLY MATCHED
P1dB=38.5dBm at 6.4GHz to 7.2GHz
HIGH GAIN HERMETICALLY SEALED PACKAGE
G1dB=9.5dB at 6.4GHz to 7.2GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
C )
CHARACTERISTICS
SYMBOL
CONDITION
UNIT MIN. TYP. MAX.
Output Power at 1dB
Compression Point
P
1dB
dBm
37.5
38.5
Power Gain at 1dB
Compression Point
G
1dB
dB
8.5
9.5
Drain Current
I
DS1
A
1.6
1.9
Gain Flatness
G
dB
0.6
Power Added Efficiency
add
V
DS
= 10
V
f
= 6.4 7.2GHz
%
39
3rd Order Intermodulation
Distortion
IM
3
dBc
-44
-47
Drain Current
I
DS2
Two Tone Test
Po= 27.5dBm
(Single Carrier Level)
A
1.6
1.9
Channel Temperature Rise
Tch
V
DS
X
I
DS
X
R
th(c-c)
C
80
ELECTRICAL CHARACTERISTICS ( Ta= 25
C )
CHARACTERISTICS
SYMBOL
CONDITION
UNIT MIN. TYP. MAX.
Transconductance
gm
V
DS
=
3V
I
DS
= 2.0A
mS
1240
Pinch-off Voltage
V
GSoff
V
DS
=
3V
I
DS
= 20mA
V
-1.0
-2.5
-4.0
Saturated Drain Current
I
DSS
V
DS
=
3V
V
GS
= 0V
A
3.6
5.0
Gate-Source Breakdown
Voltage
V
GSO
I
GS
= -70
A
V
-5
Thermal Resistance
R
th(c-c)
Channel to Case
C/W
3.8
4.6
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Apr. 2000
2
TIM6472-6UL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
V
DS
V
15
Gate-Source Voltage
V
GS
V
-5
Drain Current
I
DS
A
5.0
Total Power Dissipation (Tc= 25
C
)
P
T
W
32.5
Channel Temperature
T
ch
C
175
Storage
T
stg
C
-65
+175
PACKAGE OUTLINE (2-11D1B)
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGED TYPE
HANDLING PRECAUTIONS FOR PACKAGED TYPE
HANDLING PRECAUTIONS FOR PACKAGED TYPE
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds at
260
C.
3.2
0.3
0.1
+0.1 -0.05
0.2 M
A
X.
1.6
0.3
2.6
0.3
5.0 M
A
X.
4.0 M
I
N.
4.0 M
I
N.
12.9
0.2
4-C1.2
0.6
0.15
17
0.3
11.0 MAX.
21
0.2
12
3
TIM6472-6UL
RF PERFORMANCES
36
36
36
36
37
37
37
37
38
38
38
38
39
39
39
39
40
40
40
40
41
41
41
41
42
42
42
42
6
6
6
6
6.2
6.2
6.2
6.2
6.4
6.4
6.4
6.4
6.6
6.6
6.6
6.6
6.8
6.8
6.8
6.8
7
7
7
7
7.2
7.2
7.2
7.2
7.4
7.4
7.4
7.4
7.6
7.6
7.6
7.6
Po (dBm)
Po (dBm)
Po (dBm)
Po (dBm)
VDS= 10V
IDS
1.6A
Pin= 29.0dBm
Output Power vs. Frequency
Frequency (GHz)
Po
Po
Po
Po
add
add
add
add
31
31
31
31
32
32
32
32
33
33
33
33
34
34
34
34
35
35
35
35
36
36
36
36
37
37
37
37
38
38
38
38
39
39
39
39
40
40
40
40
22
22
22
22
24
24
24
24
26
26
26
26
28
28
28
28
30
30
30
30
32
32
32
32
Pin (dBm)
Pin (dBm)
Pin (dBm)
Pin (dBm)
Po (dBm)
Po (dBm)
Po (dBm)
Po (dBm)
0
0
0
0
10
10
10
10
20
20
20
20
30
30
30
30
40
40
40
40
50
50
50
50
60
60
60
60
70
70
70
70
80
80
80
80
90
90
90
90
add (%)
add (%)
add (%)
add (%)
f= 6.8GHz
VDS= 10V
IDS
1.6A
Output Power vs. Input Power
4
TIM6472-6UL
0
0
0
0
1 0
1 0
1 0
1 0
2 0
2 0
2 0
2 0
3 0
3 0
3 0
3 0
4 0
4 0
4 0
4 0
5 0
5 0
5 0
5 0
0
0
0
0
4 0
4 0
4 0
4 0
8 0
8 0
8 0
8 0
1 2 0
1 2 0
1 2 0
1 2 0
1 6 0
1 6 0
1 6 0
1 6 0
2 0 0
2 0 0
2 0 0
2 0 0
Tc ( )
Tc ( )
Tc ( )
Tc ( )
P
P
P
P
T
T
T
T
(W)
(W)
(W)
(W)
POWER DISSIPATION vs. CASE TEMPERATURE
-60
-60
-60
-60
-50
-50
-50
-50
-40
-40
-40
-40
-30
-30
-30
-30
-20
-20
-20
-20
23
23
23
23
25
25
25
25
27
27
27
27
29
29
29
29
31
31
31
31
33
33
33
33
IM
IM
IM
IM
3
3
3
3
(dBc)
(dBc)
(dBc)
(dBc)
IM
3
vs. OUTPUT POWER CHARACTERISTICS
Po(dBm), Single Carrier Level
VDS= 10V
IDS
1.6A
f= 6.8GHz
f= 5MHz
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