TLP126
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TLP126
Programmable Controllers
AC / DC-Input Module
Telecommunication
The TOSHIBA mini flat coupler TLP126 is a small outline coupler,
suitable for surface mount assembly.
TLP126 consists of a photo transistor, optically coupled to a gallium
arsenide infrared emitting diode connected inverse parallel, and provides
high CTR at low AC input current.
Collector-emitter voltage: 80 V (min.)
Current transfer ratio: 100% (min.)
Isolation voltage: 3750Vrms (min.)
UL recognized: UL1577, file No. E67349
Unit in mm
TOSHIBA 11-4C1
Weight: 0.09 g
Pin Configurations
(top
view)
1 : Anode, Cathode
3 : Cathode, Anode
4 : Emitter
6 : Collector
6
4
3
1
TLP126
2002-09-25
2
Maximum Ratings
(Ta = 25C)
Characteristic Symbol
Rating
Unit
Forward current
I
F(RMS)
50 mA
Forward current derating (Ta 53C)
I
F
/ C
-0.7
mA / C
Peak forward current(100s pulse,100pps)
I
FP
1 A
LE
D
Junction temperature
T
j
125 C
Collector
-emitter voltage
V
CEO
80 V
Emitter
-collector voltage
V
ECO
7 V
Collector current
I
C
50 mA
Peak collector current(10ms pulse,100pps)
I
CP
100 mA
Power dissipation
P
C
150 mW
Power dissipation derating (Ta 25C)
P
C
/ C
-1.5 mW
/
C
Det
e
c
t
or
Junction temperature
T
j
125 C
Storage temperature range
T
stg
-55~125 C
Operating temperature range
T
opr
-55~100 C
Lead soldering temperature(10 sec.)
T
sold
260
C
Total package power dissipation
P
T
200 mW
Total package power dissipation derating (Ta25C)
P
T
/ C
-2.0 mW
/
C
Isolation voltage (AC, 1min., RH 60%)
(Note 1)
BV
S
3750
Vrms
(Note 1) Device considered a two terminal device: Pins1, and 3 shorted together and 4
and 6 shorted together.
Recommended Operating Conditions
Characteristic Symbol
Min.
Typ.
Max.
Unit
Supply voltage
V
CC
5 48 V
Forward current
I
F(RMS)
1.6 20 mA
Collector current
I
C
1 10 mA
Operating temperature
T
opr
-25
75 C
TLP126
2002-09-25
3
Individual Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Forward voltage
V
F
I
F
= 10 mA
1.0
1.15
1.3
V
LE
D
Capacitance C
T
V = 0, f = 1 MHz
60
pF
Collector
-emitter
breakdown voltage
V
(BR) CEO
I
C
= 0.5 mA
80
V
Emitter
-collector
breakdown voltage
V
(BR) ECO
I
E
= 0.1 mA
7
V
V
CE
= 48 V
10 100
nA
Collector dark current
I
CEO
V
CE
= 48 V, Ta = 85C
2 50 A
Det
e
c
t
or
Capacitance collector to emitter
C
CE
V = 0, f = 1 MHz
12
pF
Coupled Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
MIn.
Typ.
Max.
Unit
Current transfer ratio
I
C
/ I
F
I
F
= 1 mA, V
CE
= 0.5 V
100
1200
%
Low input CTR
I
C
/ I
F (low)
IF = 0.5 mA, V
CE
= 1.5 V
50
%
I
C
= 0.5 mA, I
F
= 1 mA
0.4
Collector
-emitter
saturation voltage
V
CE (sat)
I
C
= 1 mA, I
F
= 1 mA
0.2
V
Off
-state collector current
I
C(off)
V
F
= 0.7V, V
CE
= 48 V
1 10 A
CTR symmetry
I
C (ratio)
I
C
(I
F
=
-1mA) / I
C
(I
F
= 1mA)
0.3
3 --
Coupled Electrical Characteristics
(Ta =
-
-
-
-
25~75C)
Characteristic Symbol
Test
Condition
MIn.
Typ.
Max.
Unit
Current transfer ratio
I
C
/ I
F
I
F
= 1 mA, V
CE
= 0.5 V
50
%
Low input CTR
I
C
/ I
F (low)
IF = 0.5 mA, V
CE
= 1.5 V
50 %
TLP126
2002-09-25
4
Isolation characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Capacitance input to output
C
S
V
S
= 0, f = 1 MHz
0.8 pF
Isolation resistance
R
S
V
S
= 500 V
510
10
10
14
AC, 1 minute
3750
AC, 1 second, in oil
10000
Vrms
Isolation voltage
BV
S
DC, 1 minute, in oil
10000 Vdc
Switching Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Rise time
t
r
8
Fall time
t
f
8
Turn
-on time
t
on
10
Turn
-off time
t
off
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100
8
s
Turn
-on time
t
ON
10
Storage time
t
S
50
Turn
-off time
t
OFF
R
L
= 4.7 k
(Fig.1)
V
CC
= 5 V, I
F
= 1.6 mA
300
s
Fig. 1 Switching time test circuit
V
CC
V
CE
I
F
t
ON
t
OFF
t
s
4.5V
0.5V
I
F
V
CC
V
CE
R
L
TLP126
2002-09-25
5
I
F
Ta
Ambient temperature Ta (C)
A
l
l
o
wabl
e f
o
rward
c
u
rrent
I
F
(
mA
)
0
100
-20
80
60
40
20
0 20 40 60 80
120
100
P
C
Ta
Ambient temperature Ta (C)
A
l
l
o
wabl
e c
o
l
l
e
c
t
or
power
di
s
s
i
p
at
i
o
n
P
C
(m
W)
200
0
-20
160
120
80
40
0 20 40 60 80
120
100
DV
F
/
DTa I
F
Forward current I
F
(mA)
Forward v
o
l
t
age
t
e
m
perat
ure
c
oef
f
i
c
i
ent
D
V
F
/
D
Ta
(
m
V
/
C
)
-3.2
-0.4
0.1
-0.8
-2.8
-2.0
-1.6
-1.2
0.3
-2.4
1 5
50
0.5 3
10
30
I
FP
D
R
Duty cycle ratio D
R
P
u
l
s
e
f
o
rward
c
u
rrent
I
FP
(mA
)
3000
10
3
30
1000
300
100
50
10
-3
500
10
-2
10
-1
10
0
3 3 3
Pulse width 100
ms
Ta = 25C
I
F
V
F
Forward voltage V
F
(V)
Forward c
u
rrent
I
F
(m
A
)
100
0.1
0.6
50
5
1
0.5
0.8 1.0 1.2
1.4
1.6 1.8
30
10
3
0.3
Ta = 25C
I
FP
V
FP
Pulse forward voltage V
FP
(V)
P
U
LS
E F
O
R
W
A
R
D
CURRE
N
T
I
FP
(
m
A
)
1000
1.0 1.4 1.8
2.2 2.6 3.0
1
0.6
500
300
100
50
30
10
5
3
Pulse width 10
ms
Repetitive
Frequency = 100Hz
Ta = 25C
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