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Электронный компонент: TLP130

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TLP130
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TLP130
Programmable Controllers
AC / DC
-Input Module
Telecommunication


The TOSHIBA mini flat coupler TLP130 is a small outline coupler,
suitable for surface mount assembly.
TLP130 consists of a photo transistor, optically coupled to two gallium
arsenide infrared emitting diode connected inverse parallel, and operate
directly by AC input current.

Collector-emitter voltage: 80V(min.)
Current transfer ratio: 50%(min.)
Rank
GB:
100%(min.)
Isolation voltage: 3750Vrms(min.)
UL recognized: UL1577, file no.E67349
Current transfer ratio


Current Transfer Ratio
I
F
= 5mA, V
CE
= 5V, Ta = 25C
Classi
-
fication
Min. Max.
Marking Of
Classification
Standard
50
600
Blank, Y, GR, GB
Rank GB
100
600
GB,GR
(Note) Application type name for certification test,
please use standard puroduct type name, i.e.
TLP130(GB): TLP130











1 : Anode, Cathode
3 : Cathode, Anode
4 : Emitter
5 : Collector
6 : Base
5
4
3
1
6


Unit in mm
TOSHIBA 11-4C2
Weight: 0.09 g
TLP130
2002-09-25
2
Maximum Ratings
(Ta = 25C)
Characteristic Symbol
Rating
Unit
Forward current
I
F(RMS)
50 mA
Forward current derating (Ta53C)
I
F
/ C
-0.7
mA / C
Peak forward current (100s pulse,100pps)
I
FP
1 A
LE
D
Junction temperature
T
j
125 C
Collector
-emitter voltage
V
CEO
80 V
Collector
-base voltage
V
CBO
80 V
Emitter
-collector voltage
V
ECO
7 V
Emitter
-base voltage
V
EBO
7 V
Collector current
I
C
50 mA
Peak collector current (10ms pulse,100pps)
I
CP
100 mA
Power dissipation
P
C
150 mW
Power dissipation derating (Ta25C)
P
C
/ C
-1.5 mW
/
C
Det
e
c
t
or
Junction temperature
T
j
125 C
Storage temperature range
T
stg
-55~125 C
Operating temperature range
T
opr
-55~100 C
Lead soldering temperature (10s)
T
sol
260 C
Total package power dissipation
P
T
200
mW
Total package power dissipation derating (Ta25C)
P
T
/ C
-2.0 mW
/
C
Isolation voltage (AC, 1min., RH 60%)
(Note 1)
BV
S
3750 V r m s
(Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic Symbol
Min.
Typ.
Max.
Unit
Supply voltage
V
CC
5 48 V
Forward current
I
F(RMS)
16 25 mA
Collector current
I
C
1 10 mA
Operating temperature
T
opr
-25
85 C
TLP130
2002-09-25
3
Individual Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Forward voltage
V
F
I
F
= 10mA
1.0
1.15
1.3
V
LE
D
Capacitance C
T
V = 0, f = 1MHz
60 pF
Collector
-emitter
breakdown voltage
V
(BR)CEO
I
C
= 0.5mA
80
V
Emitter
-collector
breakdown voltage
V
(BR)ECO
I
E
= 0.1mA
7
V
Collector
-base breakdown voltage V
(BR)CBO
I
C
= 0.1mA
80
V
Emitter
-base breakdown voltage
V
(BR)EBO
I
E
= 0.1mA
7
V
V
CE
= 48V
10 100 nA
Collector dark current
I
CEO
V
CE
= 48V, Ta = 85C
2 50 A
Collector dark current
I
CER
V
CE
= 48V, Ta = 85C
R
BE
= 1M
0.5 10 A
Collector dark current
I
CBO
V
CB
= 10V
0.1 nA
DC forward current gain
h
FE
V
CE
= 5V, I
C
= 0.5mA
400
Det
e
c
t
or
Capacitance collector to emitter
C
CE
V = 0 , f = 1MHz
10 pF
Coupled Electrical Characteristics
(Ta = 25C)

Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
50
600
Current transfer ratio
I
C
/ I
F
I
F
= 5mA, V
CE
= 5V
Rank GB
100
600
%
60
Saturated CTR
I
C
/ I
F(sat)
I
F
= 1mA, V
CE
= 0.4V
Rank GB
30
%
Base photo
-current I
PB
I
F
= 5mA, V
CB
= 5V
10 A
I
C
= 2.4mA, I
F
= 8mA
0.4
0.2
Collector-emitter
saturation voltage
V
CE(sat)
I
C
= 0.2mA, I
F
= 1mA
Rank GB
0.4
V
Off
-state collector current
I
C(off)
I
F
= 0.7mA, V
CE
= 48V
1 10
A
CTR symmetry
I
C(ratio)
I
C
(I
F
=
-5mA) / I
C
(I
F
= 5mA)
(Note
2)
0.33
3
(Note 2) I
C(ratio) =
V)
CE
V
F1,
I
F
(I
C1
I
V)
CE
V
F2,
I
F
(I
C2
I
5
5
=
=
=
=
V
CE
I
C2
I
C1
I
F2
I
F1
TLP130
2002-09-25
4
Isolation Characteristics
(Ta = 25C)

Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Capacitance input to output
C
S
V
S
=0, f=1MHz
0.8 pF
Isolation resistance
R
S
V
S
=500V 5
10
10
10
14
AC, 1minute
3750
AC, 1second, in oil
10000
V r m s
Isolation voltage
BV
S
DC, 1 minute, in oil
10000 Vdc
Switching Characteristics
(Ta = 25C)

Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Rise time
t
r
2
Fall time
t
f
3
Turn
-on time
t
on
3
Turn
-off time
t
off
V
CC
= 10V, I
C
= 2mA
R
L
= 100
3
s
Turn
-on time
t
ON
2
Storage time
t
S
25
Turn-off time
t
OFF
R
L
= 1.9 k (Fig.1)
R
BE
= OPEN
V
CC
= 5 V, I
F
= 16mA
40
s
Turn
-on time
t
ON
2
Storage time
t
S
20
Turn-off time
t
OFF
R
L
= 1.9k (Fig.1)
R
BE
= 220k
V
CC
= 5 V, I
F
= 16mA
30
s
Fig. 1 Switching time test circuit
I
F
V
CC
V
CE
R
L
R
BE
V
CC
V
CE
I
F
t
ON
t
OFF
t
s
4.5V
0.5V
TLP130
2002-09-25
5

I
F
Ta
Ambient temperature Ta (C)
A
l
l
o
wabl
e f
o
rward
c
u
rrent
I
F
(
mA
)
0
100
-20
80
60
40
20
0 20 40 60 80
120
100
P
C
Ta
Ambient temperature Ta (C)
A
l
l
o
wabl
e c
o
l
l
e
c
t
or
power

di
ss
i
p
a
t
i
on P
C
(m
W)
200
0
-20
160
120
80
40
0 20 40 60 80
120
100
DV
F
/
DTa I
F
Forward current I
F
(mA)
Forward v
o
l
t
age
t
e
m
perat
ure

Coef
f
i
c
i
ent
D
V
F
/
D
Ta
(
m
V

/


C
)
-3.2
-0.4
0.1
-0.8
-2.8
-2.0
-1.6
-1.2
0.3
-2.4
1 5
50
0.5 3
10
30
I
F
V
F
Forward voltage V
F
(V)
Forward c
u
rrent


I
F
(m
A
)
100
0.1
0.6
50
5
1
0.5
0.8 1.0 1.2
1.4
1.6 1.8
30
10
3
0.3
Ta = 25C
I
FP
V
FP
Pulse forward voltage V
FP
(V)
P
u
l
s
e
f
o
rward
c
u
rrent


I
FP
(m
A
)
1000
1.0 1.4 1.8
2.2 2.6 3.0
1
0.6
500
300
100
50
30
10
5
3
Pulse width 10
ms
Repetitive
Frequency = 100Hz
Ta = 25C
I
FP
D
R
Duty cycle ratio D
R
P
u
l
s
e
f
o
rward
c
u
rrent
I
FP
(mA
)
3000
10
3
30
1000
300
10
-3
500
10
-2
10
-1
10
0
3 3 3
100
50
Pulse width 100
ms
Ta = 25C
TLP130
2002-09-25
6

Forward current I
F
(mA)
I
C
I
F
Col
l
e
c
t
or c
u
rrent


I
C
(mA
)
100
0.1
0.3
0.3
50
10
1
0.5
0.5
30
3 10
100
1 5
50
30
3
5
VCE = 10V
VCE = 5V
VCE = 0.4V
Ta = 25C
Sample A
Sample B
I
C
V
CE
Collectoremitter voltage V
CE
(V)
Col
l
e
c
t
or c
u
rrent


I
C
(m
A
)
20mA
50
0
0
40
30
20
10
2 4 6 8 10
Ta = 25C
50mA
30mA
15mA
10mA
P
C(MAX)
I
F
= 5mA
I
C
/ I
F
I
F
Forward current I
F
(mA)
Current
t
r
ans
f
e
r
rat
i
o


I
C
/ I
F
(%
)
1000
30
0.3
50
300
100
0.5
500
3 10
100
1 5 30
50
Sample B
Ta = 25C
VCE = 10V
VCE = 5V
VCE = 0.4V
Sample A
I
C
V
CE
Collectoremitter voltage V
CE
(V)
Col
l
e
ct
or
c
u
rrent

I
C
(m
A
)
30
0
0
20
10
0.2 0.4 0.6 0.8 1.0
I
F
= 50mA
40mA
30mA
20mA
10mA
5mA
2mA
Ta = 25C
I
C
I
F
at R
BE
Forward current I
F
(mA)
Col
l
e
c
t
or c
u
rrent


I
C
(m
A
)
100
0.1
0.1
5
30
1
0.3
50
3
10
100
1 5 30
50
10
3
0.3
0.5
0.5
A
VCC
IF
R
BE
RBE = 500kW 100kW
50k
W
Ta = 25C
VCE = 5V
I
PB
I
F
Forward current I
F
(mA)
B
a
s
e
phot
o
c
u
rrent


I
PB
(
m
s)
300
0.1
0.1
3
30
1
0.5
100
3 10
100
1 5 30
50
10
0.3
0.3
Ta = 25C
VCB
IF
A
VCB = 0V
VCB = 5V
TLP130
2002-09-25
7

V
CE(sat)
Ta
Ambient temperature Ta ()
Col
l
e
c
t
orem
i
t
t
e
r
s
a
t
u
rat
i
on

V
o
l
t
age
V
CE
(
sat
)
(
V
)
0.24
0
-40
0.20
0.16
0.12
0.04
-20 0 20 40 60
100
80
0.08
I
F
= 5mA
I
c
= 1mA
10
1
10
-4
0
20 40 60
80
100 120
10
0
10
-1
10
-2
10
-3
I
CEO
Ta
Ambient temperature Ta (C)
Col
l
e
c
t
or
dar
k

c
u
rrent
I
CEO
(
m
A)
V
CE
= 48V
10V
5V
24V
I
C
Ta
Ambient temperature Ta ()
Col
l
e
c
t
or c
u
rrent


I
C
(m
A
)
100
0.1
-20
50
30
10
5
0 20 40 60 80
100
3
1
0.3
0.5
10mA
5mA
0.5mA
1mA
V
CE
= 5V
I
F = 25mA
Switching Time R
L
Load resistance R
L
(k
W)
Sw
it
c
h
in
g
time


(
m
s)
1
1
30
300
100
50
3 10
30
50
100
5
3
5
10
tOFF
tON
ts
Ta = 25C
IF = 16mA
VCC = 5V
RBE = 220kW
TLP130
2002-09-25
8
Switching Time R
L
Load resistance R
L
(k
W)
Sw
it
c
h
in
g
time


(
m
s)
1000
1
1
30
500
300
100
50
3
10 30
50 100
5
3
5
10
Ta = 25C
IF = 16mA
VCC = 5V
tOFF
tON
ts
Switching Time R
BE
Base-emitter resistance R
BE
(
W)
Sw
it
c
h
in
g
time


(
m
s)
1000
1
100k
30
500
300
100
50
300k
1M 3M
3
5
10
tOFF
tON
ts
Ta = 25C
IF = 16mA
VCC = 5V
RL = 1.9kW
TLP130
2002-09-25
9


TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
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document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE