TLP137
2002-09-25
1
TOSHIBA Photocoupler GaAs IRed & Photo
-Transistor
TLP137
Office Machine
Programmable Controllers
AC / DC
-Input Module
Telecommunication
The TOSHIBA mini flat coupler TLP137 is a small outline coupler,
suitable for surface mount assembly.
TLP137 consists of a gallium arsenide infrared emitting diode, optically
coupled to a photo transistor, and provides high CTR at low input
current.
TLP137 base terminal is for the improvement of speed, reduction of dark
current, and enable operation.
l Collector-emitter voltage: 80V(min.)
l Current transfer ratio: 100%(min.)
Rank BV: 200%(min.)
l Isolation voltage: 3750Vrms(min.)
l UL recognized: UL1577, file No. E67349
l Current transfer ratio
Current Transfer Ratio (min.)
Ta = 25C
Ta =
-25~75C
Classi
-
fication
I
F
= 1mA
V
CE
= 0.5V
I
F
= 0.5mA
V
CE
= 1.5V
I
F
= 1mA
V
CE
= 0.5V
Marking
Of
Classi
-
fication
Rank BV
200%
100%
100%
BV
Standard
100%
50%
50%
BV, Blank
(Note) Application type name for certification test,
please use standard product type name, i.e.
TLP137 (BV): TLP137
Pin Configurations
(top view)
Unit in mm
TOSHIBA 11
-4C2
Weight: 0.09 g
1 : Anode
3 : Cathode
4 : Emitter
5 : Collector
6 : Base
1
3
6
4
5
TLP137
2002-09-25
2
Maximum Ratings
(Ta = 25C)
Characteristic Symbol
Rating
Unit
Forward current
I
F
50 mA
Forward current derating (Ta 53C)
I
F
/ C
-0.7
mA / C
Peak forward current (100s pulse, 100pps)
I
FP
1 A
Reverse voltage
V
R
5 V
LE
D
Junction temperature
T
j
125 C
Collector
-emitter voltage
V
CEO
80 V
Collector
-base voltage
V
CBO
80 V
Emitter
-collector voltage
V
ECO
7 V
Emitter
-base voltage
V
EBO
7 V
Collector current
I
C
50 mA
Peak collector current (10ms pulse, 100pps)
I
CP
100 mA
Power dissipation
P
C
150 mW
Power dissipation derating (Ta 25C)
P
C
/ C
-1.5 mW
/
C
Det
e
c
t
or
Junction temperature
T
j
125 C
Storage temperature range
T
stg
-55~125 C
Operating temperature range
T
opr
-55~100 C
Lead soldering temperature (10s)
T
sol
260 C
Total package power dissipation
P
T
200
mW
Total package power dissipation derating (Ta 25C)
P
T
/ C
-2.0 mW
/
C
Isolation voltage (AC, 1min., RH 60%)
(Note 1)
BV
S
3750 V r m s
(Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted
together.
TLP137
2002-09-25
3
Individual Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Forward voltage
V
F
I
F
= 10mA
1.0
1.15
1.3
V
Reverse current
I
R
V
R
= 5V
10 A
LE
D
Capacitance C
T
V = 0, f = 1MHz
30 pF
Collector
-emitter
breakdown voltage
V
(BR)CEO
I
C
= 0.5mA
80
V
Emitter
-collector
breakdown voltage
V
(BR)ECO
I
E
= 0.1mA
7
V
Collector
-base breakdown voltage V
(BR)CBO
I
C
= 0.1mA
80
V
Emitter
-base breakdown voltage
V
(BR)EBO
I
E
= 0.1mA
7
V
V
CE
= 48V
10 100 nA
Collector dark current
I
CEO
V
CE
= 48V, Ta = 85C
2 50 A
Collector dark current
I
CER
V
CE
= 48V, Ta = 85C
R
BE
= 1M
0.5 10 A
Collector dark current
I
CBO
V
CB
= 10V
0.1 nA
DC forward current gain
h
FE
V
CE
= 5V, I
C
= 0.5mA
1000
Det
e
c
t
or
Capacitance (collector to emitter)
C
CE
V= 0, f = 1MHz
12 pF
Coupled Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
100
1200
Current transfer ratio
I
C
/ I
F
I
F
= 1mA, V
CE
= 0.5V
Rank
BV 200
1200
%
50
Low input CTR
I
C
/ I
F(low)
I
F
= 0.5mA, V
CE
= 1.5V
Rank
BV 100
%
Base photo
-current I
PB
I
F
= 1mA, V
CB
= 5V
5 A
I
C
= 0.5mA, I
F
= 1mA
0.4
0.2
Collector-emitter
saturation voltage
V
CE(sat)
I
C
= 1mA, I
F
= 1mA
Rank
BV
0.4
V
Off
-state collector current
I
C(off)
V
F
= 0.7V, V
CE
= 48V
10 A
TLP137
2002-09-25
4
Coupled Electrical Characteristics
(Ta =
-
-
-
-
25~75C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
50
Current transfer ratio
I
C
/ I
F
I
F
= 1mA, V
CE
= 0.5V
Rank
BV 100
%
50
Low input CTR
I
C
/ I
F(low)
I
F
= 0.5mA, V
CE
= 1.5V
Rank
BV 100
%
Isolation Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Capacitance (input to output)
C
S
V
S
= 0, f = 1MHz
0.8 pF
Isolation resistance
R
S
V
= 500V
5
10
10
10
14
AC, 1minute
3750
AC, 1second, in oil
10000
V r m s
Isolation voltage
BV
S
DC, 1 minute, in oil
10000 Vdc
Switching Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Rise time
t
r
8
Fall time
t
f
8
Turn
-on time
t
on
10
Turn
-off time
t
off
V
CC
= 10V, I
C
= 2mA
R
L
= 100
8
s
Turn
-on time
t
ON
10
Storage time
t
S
50
Turn-off time
t
OFF
R
L
= 4.7 k (Fig.1)
R
BE
= OPEN
V
CC
= 5 V, I
F
= 1.6mA
300
s
Turn
-on time
t
ON
12
Storage time
t
S
30
Turn-off time
t
OFF
R
L
= 4.7k (Fig.1)
R
BE
= 470k
V
CC
= 5 V, I
F
= 1.6mA
100
s
Fig. 1 Switching time test circuit
R
BE
R
L
I
F
V
CC
V
CE
V
CC
V
CE
I
F
0.5V
4.5V
t
OFF
t
ON
t
S
TLP137
2002-09-25
5
Ambient temperature Ta (C)
A
l
l
o
w
abl
e col
l
ect
o
r
pow
er
di
ssi
pati
o
n P
C
(m
w
)
200
20
0
160
120
80
40
0
40 80
100
120
60
20
A
l
l
o
w
abl
e fo
rw
a
r
d
cu
rre
nt
I
F
(
m
A
)
120
100
20
0
80
60
40
20
0 20 40 80
100
60
Ambient temperature Ta (C)
I
FP
D
R
Duty cycle ratio D
R
P
u
l
s
e
f
o
rward
c
u
rrent
I
FP
(m
A
)
3000
10
1000
500
300
100
50
30
10
3
3
10
2
3
10
1
3 10
0
PULSE WIDTH 100
ms
Ta = 25C
3
I
F
V
F
Forward voltage V
F
(V)
Forward c
u
rrent
I
F
(m
A
)
100
0.1
0.6
50
30
10
5
3
1
0.5
0.3
0.8
1.0
1.2 1.4 1.6
1.8
Ta = 25C
V
F
/ T
a
I
F
Forward current I
F
(mA)
Forward
v
o
l
t
age t
e
m
perat
ure c
o
e
f
f
i
c
i
ent
V
F
/
Ta
(
m
V
/
C)
3.2
0.4
0.1
2.0
1.6
1.2
0.8
0.5 1
3 5 10
30
50
2.4
0.3
2.8
I
FP
V
FP
Pulse forward voltage V
FP
(V)
P
u
l
s
e
f
o
rward
c
u
rrent
I
F
P
(m
A
)
1000
1
0.6
Pulse width 10
ms
Repetitive frequency
= 100 Hz
Ta = 25C
1.0 2.2
2.6
3.0
500
300
100
50
30
10
5
3
1.4
1.8
I
F
Ta
P
C
Ta
PDF 
ZIP