TLP206G
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo-MOS FET
TLP206G
PBX
ModemFAX Card
Measurement Instrument
The TOSHIBA TLP206G consists of gallium arsenide infrared emitting
diode optically coupled to a photo-MOS FET in a 8 pin SOP.
The TLP206G is a 2-Form-A switch which is suitable for replacement of
mechanical relays in many application.
SOP 8 pin (2.54SOP8): 2-Form-A
Peak off-state voltage: 350V(min)
Trigger LED current: 3mA(max)
On-state current: 120mA(max)
On-state resistance: 35(max)
Isolation voltage: 1500V
rms
(min)
UL recognized: UL1577, file no.E67349
BSI approved: BS EN60065: 1994,certificate no.8273
BS
EN60950:
1992,certificate no.8274
SEMKO approved: SS EN60065
SS
EN60950
Option(V4)type
TUV approved: DIN VDE0884 / 06.92,
certificate No. R9850580
Schematic Pin
Configuration
(top view)
1
2
1, 3: Anode
2, 4: Cathpde
5: Drain D1
6: Drain D2
7: Drain D3
8: Drain D4
3
4
6
5
7
8
1, 3
2, 4
6, 8
5, 7
8
7
1
2
6
5
3
4
2-Form-A
Unit in mm
JEDEC
EIAJ
TOSHIBA
Weight: 0.2 g
TLP206G
2002-09-25
2
Maximum Ratings
(Ta = 25C)
Characteristic Symbol
Rating
Unit
Forward current
I
F
50
mA
Forward current derating (Ta 25C)
I
F
/ C
-0.5
mA / C
Pulse forward current (100s pulse, 100pps)
I
FP
1
A
Reverse voltage
V
R
5
V
LE
D
Junction temperature
T
j
125
C
Off
-state output terminal voltage
V
OFF
350 V
Both channel
(Note 1)
100
On
-state current
One channel
I
ON
120
mA
Both channel (Note 1)
-1.0
On
-state RMS current
derating(Ta 25C)
One channel
I
ON
/ C
-1.2
mA / C
Det
e
c
t
or
Junction temperature
T
j
125
C
Storage temperature range
T
stg
-55~125 C
Operating temperature range
T
opr
-40~85 C
Lead soldering temperature (10 s)
T
sol
260
C
Isolation voltage (AC, 1 min., R.H. 60%)
(Note 2)
BV
S
1500
V
rms
(Note 1): Two channels operating simultaneously.
(Note 2): Device considered a two
-terminal device: Pins1,2,3 and 4 shorted
together and pins 5,6,7 and 8 shorted together.
Recommended Operating Conditions
Characteristic Symbol
Min.
Typ.
Max.
Unit
Supply voltage
V
DD
280
V
Forward current
I
F
5
7.5
25
mA
On
-state current
I
ON
100
mA
Operating temperature
T
opr
-20
65 C
TLP206G
2002-09-25
3
Individual Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Forward voltage
V
F
I
F
= 10 mA
1.0
1.15
1.3
V
Reverse current
I
R
V
R
= 5 V
--
--
10
A
LE
D
Capacitance C
T
V = 0, f = 1 MHz
--
30
--
pF
Off
-state current
I
OFF
V
OFF
= 350 V
--
--
1
A
Det
e
c
t
or
Capacitance C
OFF
V = 0,f = 1MHZ
--
40
--
pF
Coupled Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
MIn.
Typ.
Max.
Unit
Trigger LED current
I
FT
I
ON
= 120 mA
--
1
3
mA
On
-state resistance
R
ON
I
ON
= 120 mA, I
F
= 5 mA
--
22
35
Isolation Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Capacitance input to output
C
S
V
S
= 0, f = 1 MHz
--
0.8
--
pF
Isolation resistance
R
S
V
S
= 500 V, R.H. 60%
510
10
10
14
--
AC, 1 minute
1500
--
--
AC, 1 second, in oil
--
3000
--
V
rms
Isolation voltage
BV
S
DC, 1 minute, in oil
--
3000
--
V
dc
Switching Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Turn
-on time
t
ON
-- 0.3 1
Turn
-off time
t
OFF
R
L
= 200 (Note
3)
V
DD
= 20 V, I
F
= 5 mA
-- 0.1 1
ms
(Note 3): Switching time test circuit
1, 3
V
DD
V
OUT
R
L
5, 7
I
F
6, 8
2, 4
t
OFF
t
ON
10%
90%
V
OUT
I
F
TLP206G
2002-09-25
4
60
I
F
Ta
Ambient temperature Ta (C)
A
l
l
o
w
abl
e fo
rw
a
r
d
cu
rre
nt
I
F
(m
A
)
100
0
20
0
20
40
60
80
100
80
40
20
120
20
0
20
40 60 80
100
I
ON
Ta
Ambient temperature Ta (C)
A
l
l
o
w
abl
e M
O
S
F
E
T
on-
st
a
t
e c
u
r
r
e
n
t
I
ON(
R
MS
) (
m
A
)
140
0
100
80
120
60
40
20
I
FP
D
R
Duty cycle ratio DR
A
l
l
o
w
abl
e p
u
l
s
e
fo
rw
a
r
d c
u
r
r
e
n
t
I
FP
(mA
)
5000
10
3
30
500
300
100
10
3
3
3
3
10
2
10
1
10
0
3000
1000
50
Pulse width 100s
Ta = 25C
I
F
V
F
Forward voltage VF (V)
Fo
rw
ar
d
c
u
r
r
en
t I
F
(mA
)
100
0.1
10
3
0.3
1
30
0.6
1.0
1.2
1.6
1.8
0.8
1.4
0.5
5
50
Ta = 25C
V
F
/ Ta I
F
Forward current IF (mA)
Fo
rw
ar
d v
o
l
t
age
te
mp
er
atu
r
e
coef
fi
ci
en
t
V
F
/
Ta
(
m
V
/
C
)
0.4
0.1
0.3 1 3 5 10 50
2.4
1.6
1.2
0.5
0.8
2.0
2.8
30
I
FP
V
FP
Pulse forward voltage VFP (V)
P
u
l
s
e f
o
rw
ar
d cu
rr
ent
I FP
(
m
A
)
1000
0
0.6
1.0 1.4
2.2 2.6 3.0
300
50
10
5
1.8
500
100
30
3
Pulse width 10s
Repetitive frequency = 100Hz
Ta = 25C
TLP206G
2002-09-25
5
I
FT
Ta
Re
la
tiv
e
t
r
ig
g
e
r
L
E
D c
u
r
r
e
n
t
I FT
/ I
FT
(T
a =
25
C
)
Ambient temperature Ta (C)
5
0
40
4
3
2
1
20
0
20
40 60
100
80
ION = 120mA
I
ON
V
ON
MOSFET on-state voltage VON (V)
MOS
F
E
T
on
-state cur
r
e
n
t
I ON
(mA
)
150
150
2.5
100
50
0
50
100
1.5
0.5
1.5 2.5
Ta = 25C
IF = 5mA
I
OFF
Ta
Ambient temperature Ta (C)
M
O
S
F
E
T
of
f-
st
a
t
e cur
r
e
n
t
I ON
(mA
)
1000
1
20
300
100
10
5
0 20 40 60 80 100
500
50
30
3
VOFF = 350V
T
u
rn
-o
f
f
t
i
m
e
t
OF
F
(
m
s
)
Ambient temperature Ta (C)
40
0
40
20
10
20
0
20
40 60
100
80
R
ON
Ta
M
O
S
F
E
T
on
-
s
tate r
e
si
st
a
n
ce
R
ON
(
)
30
ION = 120mA
IF = 5mA
t
ON
Ta
Ambient temperature Ta (C)
T
u
rn
-o
n
t
i
m
e
t
ON
(
m
s)
1000
0
40
20
0
20
60 80 100
800
600
200
VDD = 20V
RL = 200
IF = 5A
40
400
t
OFF
Ta
Ambient temperature Ta (C)
400
0
40
20
0
20
60 80 100
300
200
100
40
VDD = 20V
RL = 200
IF = 5A
0.5
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