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Электронный компонент: TLP3542

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TLP3542
1 2003-7-3
TENTATIVE
TOSHIBA PHOTOCOUPLER PHOTO RELAY
T L P 3 5 4 2
TESTERS
DATA RECORDING EQUIPMENT
MEASURING EQUIPMENT


The TOSHIBA TLP3542 series consist of a aluminum gallium arsenide
infrared emitting diode optically coupled to a photo-MOS FET in a plastic DIP
package.
The TLP3452 series are a bi-directional switch, which can replace
mechanical relays in many applications.

6 pin DIP (DIP6)
1-Form-A
Peak Off-State Voltage
: 60 V (MIN.)
Trigger LED Current
: 3 mA (MAX.)
On-State Current
: 2.5 A (MAX.)
On-State Resistance
: 100 m
W (MAX.)
Isolation Voltage
: 2500 Vrms (MIN.)

PIN CONFIGURATION (TOL VIEW)
1 : ANODE
2 : CATHODE
3 : N.C.
4 : DRAIN D1
6 : DRAIN D2
1
2
3
6
4
SCHEMATIC
1
2
6
4
Unit: mm
JEDEC
EIAJ
TOSHIBA
11
-7A9
Weight: 0.4 g
TLP3542
2 2003-7-3
MAXIMUM RATINGS
(Ta
=
=
=
=
25C)
CHARACTERISTIC SYMBOL
RATING
UNIT
Forward Current
I
F
30 mA
Forward Current Derating (Ta
>
=
25C)
DI
F
/C
-0.3 mA/C
Peak Forward Current (100
ms pulse, 100 pps)
I
FP
1
A
Reverse Voltage
V
R
5
V
LE
D
Junction Temperature
T
j
125
C
Off-State Output Terminal Voltage
V
OFF
60 V
On-State Current
I
ON
2.5 A
On-State Current Derating(Ta
>
=
40C)
DI
ON
/C 22
mA/C
DE
T
E
CT
OR
Junction Temperature
T
j
125
C
Storage Temperature Range
T
stg
-40~125 C
Operating Temperature Range
T
opr
-20~85
C
Lead Soldering Temperature (10 s)
T
sol
260
C
Isolation Voltage (AC, 1 minute, R.H. <
= 60%) (NOTE1)
BV
S
2500
Vrms
(NOTE1) :Device considered a two-terminal device : Pins 1, 2 and 3 shorted together, and
pins 4 and 6 shorted together.
RECOMMENDED OPERATING CONDITIONS
CHARACTERISTIC SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply Voltage
V
DD
48 V
Forward Current
I
F
10
20 mA
On-State Current
I
ON
2.5 A
Operating Temperature
T
opr
25
60 C
TLP3542
3 2003-7-3
INDIVIDUAL ELECTRICAL CHARACTERISTICS
(Ta
=
=
=
=
25C)
CHARACTERISTIC SYMBOL TEST
CONDITION MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
I
F
= 10 mA
1.18
1.33
1.48
V
Reverse Current
I
R
V
R
= 5 V
10 mA
LE
D
Capacitance C
T
V
= 0, f = 1 MHz
30 pF
V
OFF
= 20 V, Ta = 25C
0.1 1.5 nA
Off-State Current
I
OFF
V
OFF
= 60 V, Ta = 25C
1.0 10 nA
DE
T
E
CT
OR
Capacitance C
OFF
V
= 0, f = 1 MHz
400 600 pF
COUPLED ELECTRICAL CHARACTERISTICS
(Ta
=
=
=
=
25C)
CHARACTERISTIC SYMBOL TEST
CONDITION MIN.
TYP.
MAX.
UNIT
Trigger LED Current
I
FT
I
ON
= 1.0 A
1 3
mA
Return LED Current
I
FC
I
OFF
= 10 mA 0.1
mA
On-State Resistance
R
ON
I
ON
= 2.0 A, I
F
= 10 mA, t = 10 ms
65 100
m
W
ISOLATION CHARACTERISTICS
(Ta
=
=
=
=
25C)
CHARACTERISTIC SYMBOL TEST
CONDITION MIN.
TYP.
MAX.
UNIT
Capacitance Input to Output
C
S
V
S
= 0 V, f = 1 MHz
0.8
pF
Isolation Resistance
R
S
V
S
= 500 V, R.H.
<
=
60% 5
10
10
10
14
W
AC, 1 minute
2500
AC, 1 second (in oil)
5000
Vrms
Isolation Voltage
BV
S
DC, 1 minute (in oil)
5000 Vdc
SWITCHING CHARACTERISTICS
(Ta
=
=
=
=
25C)
CHARACTERISTIC SYMBOL TEST
CONDITION MIN.
TYP.
MAX.
UNIT
Turn-on Time
t
ON
1.0 1.5
Turn-off Time
t
OFF
R
L
= 200 W
(NOTE 2)
V
DD
= 20 V, I
F
= 10 mA
0.2 0.4
ms
(NOTE 2) : SWITCHING TIME TEST CIRCUIT
V
OUT
I
F
t
ON
t
OFF
90%
10%
6
R
L
V
DD
V
OUT
4
1
2
I
F

TLP3542
4 2003-7-3
I F Ta
I ON Ta
A
l
l
o
wabl
e f
o
rward
c
u
rrent


I F
(
m
A
)
-20
0
20
40
60
80
100
120
0
10
20
30
40
50
A
l
l
o
wabl
e On-
s
at
e
c
u
rrent


I ON
(A
)
-20
0
20
40
60
80
100
120
0
1
2
3
4
Ambient temperature Ta (
C)
Ambient temperature Ta (
C)
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EBC
RESTRICTIONS ON PRODUCT USE