TLP371,TLP372
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TLP371, TLP372
Office Machine
Household Use Equipment
Telecommunication
Solid State Relay
Programmable Controllers
The TOSHIBA TLP371 and TLP372 consists of a gallium arsenide
infrared emitting diode optically coupled to a darlington connected
photo-transistor which has an integrated base-emitter resistor to
optimize switching speed and elevated temperature characteristics in a
six lead plastic DIP package.
TLP372 is no-base internal connection for high-EMI environments.
Current transfer ratio: 1000% (min) (I
F
= 1mA)
Isolation voltage: 5000 Vrms (min)
UL recognized: UL1577, file no. E67349
Pin Configurations
(top view)
1
2
5
4
3
6
TLP371
1 : Anode
2 : Cathode
3 : NC
4 : Emitter
5 : Collector
6 : Base
1
2
5
4
3
6
TLP372
1 : Anode
2 : Cathode
3 : NC
4 : Emitter
5 : Collector
6 : NC
TOSHIBA 11
-7A8
Weight: 0.4g
Unit in mm
TLP371,TLP372
2002-09-25
2
Maximum Ratings
(Ta = 25C)
Characteristic Symbol
Rating
Unit
Forward current
I
F
60
mA
Forward current derating (Ta 39C)
I
F
/ C
-0.7
mA / C
Peak forward current (100s pulse, 100pps)
I
FP
1
A
Reverse voltage
V
R
5
V
LE
D
Junction temperature
T
j
125
C
Collector
-emitter voltage
V
CEO
300
V
Collector
-base voltage (TLP371)
V
CBO
300
V
Emitter
-collector voltage
V
ECO
0.3
V
Emitter
-base voltage (TLP371)
V
EBO
7
V
Collector current
I
C
150
mA
Power dissipation
P
C
300
mW
Power dissipation derating (Ta 25C)
P
C
/ C
-3.0 mW
/
C
Det
e
c
t
or
Junction temperature
T
j
125
C
Storage temperature range
T
stg
-55~125 C
Operating temperature range
T
opr
-55~100 C
Lead soldering temperature (10 s)
T
sold
260
C
Total package power dissipation
P
T
350
mW
Total package power dissipation derating (Ta 25C)
P
T
/ C
-3.5 mW
/
C
Isolation voltage (AC, 1min., R.H. 60%)
(Note 1)
BV
S
5000
Vrms
(Note 1): Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4,5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic Symbol
Min
Typ.
Max
Unit
Supply voltage
V
CC
200
V
Forward current
I
F
16 25 mA
Collector current
I
C
120
mA
Operating temperature
T
opr
-25
85 C
TLP371,TLP372
2002-09-25
3
Individual Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min
Typ.
Max
Unit
Forward voltage
V
F
I
F
= 10 mA
1.0
1.15
1.3
V
Reverse current
I
R
V
R
= 5 V
10 A
LE
D
Capacitance C
T
V = 0, f = 1 MHz
30 pF
Collector
-emitter
breakdown voltage
V
(BR) CEO
I
C
= 0.1 mA
300
V
Emitter
-collector
breakdown voltage
V
(BR) ECO
I
E
= 0.1 mA
0.3
V
Collector
-base
breakdown voltage (TLP371)
V
(BR) CBO
I
C
= 0.1 mA
300
V
Emitter
-base
breakdown voltage (TLP371)
V
(BR) EBO
I
E
= 0.1 mA
7
V
V
CE
= 200 V
10 200
nA
Collector dark current
I
CEO
V
CE
= 200 V
Ta = 85 C
20 A
Collector dark current (TLP371)
I
CER
V
CE
= 200 V
Ta = 85 C,
R
BE
= 10 M
0.5 10 A
Collector dark current (TLP371)
I
CBO
V
CE
= 200 V
0.1 nA
DC forward current gain (TLP371)
h
FE
V
CE
= 5 V,
I
C
= 10 mA
7000
Det
e
c
t
or
Capacitance (collecter to emitter)
C
CE
V = 0, f = 1 MHz
10 pF
Coupled Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
MIn
Typ.
Max
Unit
Current transfer ratio
I
C
/ I
F
I
F
= 1 mA, V
CE
= 1 V
1000
4000
%
Saturated CTR
I
C
/ I
F (sat)
I
F
= 10 mA, V
CE
= 1 V
500
%
Base photo
-current (TLP371)
I
PB
I
F
= 1 mA, V
CB
= 1 V
6 A
I
C
= 10 mA, I
F
= 1 mA
1.0
Collector
-emitter
saturation voltage
V
CE (sat)
I
C
= 100 mA, I
F
= 10 mA
0.3
1.2
V
TLP371,TLP372
2002-09-25
4
Isolation Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min
Typ.
Max
Unit
Capacitance
(input to output)
C
S
V
S
= 0, f = 1 MHz
0.8 pF
Isolation resistance
R
S
V
S
= 500 V
510
10
10
14
AC, 1 minute
5000
AC, 1 second, in oil
10000
V
rms
Isolation voltage
BV
S
DC, 1 minute, in oil
10000
V
dc
Switching Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min
Typ.
Max
Unit
Rise time
t
r
40
Fall time
t
f
15
Turn
-on time
t
on
50
Turn
-off time
t
off
V
CC
= 10 V
I
C
= 10 mA
R
L
= 100
15
s
Turn
-on time
t
ON
3
Storage time
t
s
45
Turn
-off time
t
OFF
R
L
= 180
(Fig.1)
R
BE
= OPEN
V
CC
= 5 V, I
F
= 16 mA
90
s
Turn
-on time
t
ON
5
Storage time
t
s
40
Turn
-off time
t
OFF
R
L
= 180 (Fig.1)
R
BE
= 10 M(TLP371)
V
CC
= 10 V, I
F
= 16 mA
80
s
Fig.1: Switching time test circuit
I
F
R
BE
V
CC
V
CE
R
L
I
F
V
CE
V
CC
t
ON
9V
1V
t
OFF
t
s
TLP371,TLP372
2002-09-25
5
I
FP
D
R
P
u
l
s
e f
o
rw
ar
d c
u
r
r
en
t
I
FP
(mA
)
Duty cycle ratio DR
5000
3000
3
3
10
-3
3
10
1000
500
30
100
50
300
10
-1
10
-2
3
Pulse width
100s
Ta = 25C
10
0
I
F
Ta
A
l
l
o
w
abl
e f
o
rw
ard
cu
rr
ent
I
F
(
m
A
)
Ambient temperature Ta ()
120
100
100
80
80
60
20 40
0
-20
0
60
40
20
P
C
Ta
A
l
l
o
w
abl
e c
o
l
l
e
ct
or
pow
er
di
ssi
pati
o
n P
C
(m
W
)
Ambient temperature Ta ()
120
400
100
320
80
60
20 40
0
-20
0
240
160
80
I
F
V
F
Fo
rw
ar
d c
u
r
r
e
n
t I
F
(
m
A
)
Forward voltage VF (V)
100
50
0.6
0.3
5
0.5
30
3
1
10
0.1
0.8
1.0 1.2 1.4
1.6
1.8
Ta = 25C
I
FP
V
FP
P
u
l
s
e f
o
rw
ar
d c
u
r
r
en
t I
FP
(
m
A
)
Pulse forward voltage VFP (V)
1000
500
0.6
3
50
5
300
30
10
100
1
1.0 1.4 1.8 2.2 2.6 3.0
Pulse width 10s
Repetitive frequency
=100Hz
Ta = 25C
Fo
rw
or
d v
o
l
t
ag
e t
e
m
per
atu
r
e
coef
fi
ci
en
t
V
F
/
T
a
(mV
/
)
-3.2
0.1
-2.0
-2.4
-2.8
-0.4
0.5
0.3
-1.6
-1.2
-0.8
1 3 10
30 50
V
F
/
Ta I
F
Forward current I
F
(mA)
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