TLP421
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TLP421
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage Circuits
The TOSHIBA TLP421 consists of a silicone photo-transistor optically
coupled to a gallium arsenide infrared emitting diode in a four lead
plastic DIP (DIP4) with having high isolation voltage
(AC: 5kV
RMS
(min)).
Collector-emitter voltage: 80V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
Isolation voltage: 5000V
rms
(min.)
UL recognized: UL1577
BSI approved: BS EN60065: 1994
Approved no.8411
BS EN60950: 1992
Approved no.8412
SEMKO approved: EN60065, EN60950, EN60335
Approved
no.9910249/01
Pin Configurations
(top view)
1
2
3
4
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
Unit in mm
TOSHIBA 11-5B2
Weight: 0.26 g
TLP421
2002-09-25
2
Option(D4)type
TV approved: DIN VDE0884
Approved
no.R9950202
Maximum operating insulation voltage: 890V
PK
Maximu permissible overvoltage: 8000V
PK
(Note): When a VDE0884 approved type is needed,
please designate the "Option(D4)"
Making the VDE applocation: DIN VDE0884
Construction mechanical rating
7.62mm Pich
Typical Type
10.16mm Pich
TLPxxxF Type
Creepage distance
7.0mm(min)
8.0mm(min)
Clearance 7.0mm(min)
8.0mm(min)
Insulation thickness
0.4mm(min)
0.4mm(min)
Current Transfer Ratio
Current Transfer Ratio (%)
(I
C
/ I
F
)
I
F
= 5mA, V
CE
= 5V, Ta = 25C
Type
Classi
-
fication
(*1)
Min Max
Marking Of Classification
(None)
50
600
Blank, Y, Y+, G, G+, B, B+, GB
Rank Y
50
150
Y, Y+
Rank GR
100
300
G, G+
Rank BL
200
600
B, B+
TLP421
Rank GB
100
600
G, G+, B, B+, GB
(*1): Ex. rank GB: TLP421 (GB)
(Note): Application type name for certification test, please use standard product type name, i. e.
TLP421 (GB): TLP421
TLP421
2002-09-25
3
Maximum Ratings
(Ta = 25C)
Characteristic Stmbol
Rating
Unit
Forward current
I
F
60
mA
Forward current derating(Ta 39C)
I
F
/ C
-0.7
mA / C
Pulse forward current
(Note 2)
I
FP
1 A
Power dissipation
P
D
100 mW
Power dissipation derating
P
D
/ C
-1.0 mW
/
C
Reverse voltage
V
R
5 V
LE
D
Junction temperature
T
j
125 C
Collector
-emitter voltage
V
CEO
80 V
Emitter
-collector voltage
V
ECO
7 V
Collector current
I
C
50 mA
Power dissipation(single circuit)
P
C
150 mW
Power dissipation derating
(Ta 25C)(single circuit)
P
C
/ C
-1.5 mW
/
C
Det
e
c
t
or
Junction temperature
T
j
125 C
Operating temperature range
T
opr
-55~100 C
Storage temperature range
T
stg
-55~125 C
Lead soldering temperature (10s)
T
sol
260 C
Total package power dissipation
P
T
250 mW
Total package power dissipation derating
(Ta 25C)
P
T
/ C
-2.5 mW
/
C
Isolation voltage
(Note 3)
BV
S
5000 V
rms
(Note 2): 100s pulse, 100Hz frequency
(Note 3): AC, 1 min., R.H. 60%. Apply voltage to LED pin and detector pin together.
Recommended Operating Conditions
Characteristic Symbol
Min
Typ.
Max
Unit
Supply voltage
V
CC
5 24 V
Forward current
I
F
16 25 mA
Collector current
I
C
1 10 mA
Operating temperature
T
opr
-25
85 C
TLP421
2002-09-25
4
Individual Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min
Typ.
Max
Unit
Forward voltage
V
F
I
F
= 10 mA
1.0
1.2
1.3
V
Reverse current
I
R
V
R
= 5 V
10 A
LE
D
Capacitance C
T
V = 0, f = 1 MHz
30 pF
Collector
-emitter
breakdown voltage
V
(BR) CEO
I
C
= 0.5 mA
80
V
Emitter
-collector
breakdown voltage
V
(BR) ECO
I
E
= 0.1 mA
7
V
V
CE
= 24 V (ambient light
below
1000
x)
0.01
(0.1)
0.1
(10)
A
Collector dark current
I
D
(I
CEO
)
V
CE
= 24 V (ambient light
Ta = 85C
below 1000 x)
0.6
(1)
50
(50)
A
Det
e
c
t
or
Capacitance
(collector to emitter)
C
CE
V = 0, f = 1 MHz
10 pF
Coupled Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
MIn
Typ.
Max
Unit
50
600
Current transfer ratio
I
C
/ I
F
I
F
= 5 mA, V
CE
= 5 V
Rank
GB
100
600
%
60
Saturated CTR
I
C
/ I
F (sat)
IF = 1 mA, V
CE
= 0.4 V
Rank
GB
30
%
I
C
= 2.4 mA, I
F
= 8 mA
0.4
0.2
Collector
-emitter saturation
voltage
V
CE (sat)
I
C
= 0.2 mA, I
F
= 1 mA
Rank
GB
0.4
V
Isolation Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min
Typ.
Max
Unit
Capacitance
(input to output)
C
S
V
S
= 0, f = 1 MHz
0.8 pF
Isolation resistance
R
S
V
S
= 500 V
110
12
10
14
AC, 1 minute
5000
AC, 1 second, in oil
10000
V
rms
Isolation voltage
BV
S
DC, 1 minute, in oil
10000 Vdc
TLP421
2002-09-25
5
Switching Characteristics
(Ta = 25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Rise time
t
r
2
Fall time
t
f
3
Turn
-on time
t
on
3
Turn
-off time
t
off
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100
3
s
Turn
-on time
t
ON
2
Storage time
t
s
25
Turn
-off time
t
OFF
R
L
= 1.9 k
(Fig.1)
V
CC
= 5 V, I
F
= 16 mA
50
s
Fig.1 Switching time test circuit
I
F
V
CE
V
CC
t
ON
4.5V
0.5V
t
OFF
t
s
V
CC
V
CE
I
F
R
L
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