TLP523,TLP523
-2,TLP523-4
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo
-Transistor
TLP523, TLP523
-
-
-
-
2, TLP523
-
-
-
-
4
Programmable Controllers
DC
-Output Module
Solid State Relay
The TOSHIBA TLP523, -2 and -4 consists of a gallium arsenide
infrared emitting diode coupled with a silicon, darlington connected,
phototransistor which has an integral base-emitter resistor to optimize
switching speed and elevated temperature characteristics.
The TLP523-2 offers two isolated channels in a eight lead plastic DIP
package, while the TLP523-4 provide four isolated channels per
package.
Current transfer ratio: 500% (min.) (I
F
= 1 mA)
Isolation voltage: 2500 Vrms (min.)
Collector-emitter voltage: 55 V (min.)
Leakage current: 10A (max.) (Ta = 85C)
UL recognized: UL1577, file no. E67349
Pin Configurations
(top view)
1
4
3
2
TLP523
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
1
2
7
6
3
8
TLP523-2
1, 3 : Anode
2, 4 : Cathode
5, 7 : Emitter
6, 8 : Collector
4
5
5
6
11
10
7
12
8
9
1
2
15
14
3
16
TLP523-4
4
13
1, 3, 5, 7
2, 4, 6, 8
9, 11, 13, 15
10, 12, 14, 16
: Anode
: Cathode
: Emitter
: Collector
TOSHIBA 11
-5B2
Weight: 0.26 g
TOSHIBA 11
-10C4
Weight: 0.54 g
TOSHIBA 11
-20A3
Weight: 1.1 g
Unit in mm
TLP523,TLP523
-2,TLP523-4
2002-09-25
2
Maximum Ratings
(Ta = 25C)
Rating
Characteristic Symbol
TLP523
TLP523
-2
TLP523
-4
Unit
Forward current
I
F
60 50
mA
Forward current derating
I
F
/C
-0.7 (Ta 39C) -0.5 (Ta 25C)
mA /C
Pulse forward current
I
FP
1 (100s pulse, 100pps)
A
LE
D
Reverse voltage
V
R
5
V
Collector
-emitter voltage
V
CEO
55 V
Emitter
-collector valtage
V
ECO
0.3 V
Collector current
I
C
150
mA
Collector power dissipation
(1 circuit)
P
C
150 100
mW
Det
e
c
t
or
Collector power dissipation
derating (1 circuit (Ta 25C))
P
C
/C
-1.5
-1.0 mW
/C
Operating temperature range
T
opr
-55~100 C
Storage temperature range
T
stg
-55~125 C
Lead soldering temperature (10 s)
T
sol
260
C
Total power dissipation
P
T
250 150
mW
Total power dissipation derating
(Ta 25C)
P
T
/C
-2.5
-1.5 mW
/C
Isolation voltage
(Note 1)
BV
S
2500 (AC, 1min., R.H. 60%)
Vrms
(Note 1) Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
Recommended Operating Conditions
Characteristic Symbol
Min.
Typ.
Max.
Unit
Supply voltage
V
CC
5 24 V
Forward current
I
F
16 20 mA
Operating temperature
range
T
opr
-25
85 C
TLP523,TLP523
-2,TLP523-4
2002-09-25
3
Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Forward voltage
V
F
I
F
= 10 mA
1.0
1.15
1.3
V
Reverse current
I
R
V
R
= 5 V
--
--
10
A
LE
D
Capacitance C
T
V = 0, f = 1 MHz
--
30 -- pF
Collector
-emitter
breakdown voltage
V
(BR) CEO
I
C
= 1 mA
55
-- -- V
V
CE
= 24 V
--
10 200
nA
Collector dark current
I
CEO
V
CE
= 24 V, Ta = 85C
--
0.5 10 A
Det
e
c
t
or
Capacitance collector
to emitter
C
CE
V = 0, f = 1 MHz
--
10 -- pF
Current transfer ratio
I
C
/ I
F
I
F
= 1 mA, V
CE
= 1 V
500
2000 -- %
Collector
-emitter
saturation voltage
V
CE(sat)
I
C
= 50 mA, I
F
= 10 mA
--
-- 1 V
Capacitance input
to output
C
S
V
S
= 0, f = 1 MHz
--
0.8 -- pF
Coupl
ed
Isolation resistance
R
S
V
S
= 500 V, R.H. 60%
510
10
10
14
--
Switching Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Turn
-on time
t
ON
-- 3 -- s
Turn
-off time
t
OFF
V
CC
= 10 V, R
L
= 180
I
F
= 16 mA
-- 80 -- s
Switching Time Test Circuit
V
CC
V
CE
I
F
R
L
I
F
I
F
V
CE
t
ON
9V
1V
t
OFF
TLP523,TLP523
-2,TLP523-4
2002-09-25
4
I
F
Ta
A
l
l
o
w
abl
e fo
rw
a
f
d
cur
r
e
n
t
I
F
(
m
A
)
Ambient temperature Ta ()
100
80
-20
0
60
40
20
120
100
80
60
20 40
0
TLP523
TLP523 -2, -4
Forward voltage VF (V)
I
F
V
F
Fo
rw
ar
d
c
u
r
r
en
t I
F
(m
A
)
100
50
0.6
0.3
5
0.5
30
3
1
10
0.1
0.8
1.0 1.2 1.4
1.6
1.8
Ta = 25
V
F /
Ta I
F
Fo
rw
ar
d v
o
l
t
age
te
mp
er
atu
r
e
coef
fi
ci
en
t
V
F
/
Ta
(
m
V
/
)
-3.2
-2.0
-2.4
-2.8
-0.4
-1.6
-1.2
-0.8
Forward current IF (mA)
0.1 0.3 1 3
10 30
I
FP
V
FP
P
u
l
s
e f
o
rw
ar
d cu
rr
ent
I
FP
(m
A
)
Pulse forward voltage VFP (V)
1000
500
0.6
50
300
30
10
100
1
1.0
1.4
1.8 2.2 2.6
3
5
3
Pulse width 10s
Repetitive frequency = 100Hz
Ta = 25
I
FP
D
R
P
u
l
s
e f
o
rw
ar
d cu
rr
ent
I
FP
(m
A
)
Duty cycle patio DR
5000
3000
3
3
10
-3
3
10
1000
500
30
100
50
300
10
-1
10
-2
3
10
0
Pulse width 100s
Ta = 25
P
C
Ta
A
l
l
o
w
abl
e col
l
ect
o
r
pow
er
di
ssi
pati
o
n P
C
(m
W
)
Ambient temperature Ta ()
160
-20
0
120
80
40
120
100
80
60
20 40
0
200
TLP523
TLP523 -2, -4
TLP523,TLP523
-2,TLP523-4
2002-09-25
5
I
C
I
F
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(
m
A
)
Forward current IF (mA)
300
100
50
30
10
5
3
1
0.3
1
3 10
30
V
CE
= 1V
Ta = 25C
Sample 1
2
3
I
C
I
F
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(
m
A
)
Forward current IF (mA)
300
100
50
30
10
5
3
1
0.3
1
3 10
30
VCE = 1.2V
Ta = 25C
Sample 1
2
3
100
80
60
40
0 20
-20
-40
1.0
0.8
0
0.6
0.4
0.2
1.2
1.6
1.4
Ambient temperature Ta ()
V
CE(sat)
Ta
C
o
l
l
e
ct
or
-e
mi
tte
r
s
a
tu
rati
on
vol
t
ag
e V
CE
(s
a
t
)
(V
)
Test condition
A : IC=100mA, IF=10mA
B : IC=50mA, IF=10mA
C : IC=10mA, IF=1mA
D : IC=1mA, IF=0.5mA
Test condition A
B
C
D
120
140
Ambient temperature Ta ()
I
C
Ta
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(m
A
)
100
80
60
40
0
20
-20
-40
100
80
0
60
40
20
Test condition
A : IF =10mA, VCE=1.2V
B : IF =10mA, VCE=1.0V
C : IF =2mA, VCE=1.2V
D : IF =2mA, VCE=1.0V
E : IF =1mA, VCE=1.2V
F : IF =1mA, VCE=1.0V
Test condition
B
C
D
A
E
F
PDF 
ZIP