TLP531,TLP532
2002-09-25
1
TOSHIBA Photocoupler GaAs IRed & Photo-Transistor
TLP531,TLP532
Programmable Controllers
AC / DC-Input Module
Solid State Relay
The TOSHIBA TLP531 and TLP532 consist of a photo-transistor
optically coupled to a gallium arsenide infrared emitting diode in a six
lead plastic DIP.
TLP532 is no-base internal connection for high-EMI environments.
Collector-emitter voltage: 55 V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
Isolation voltage: 2500 V
rms
(min.)
UL recognized: UL1577, file no. E67349
Pin Configurations
(top view)
Unit in mm
TOSHIBA 11-7A8
Weight: 0.4g
TLP531,TLP532
2002-09-25
2
Maximum Ratings
(Ta = 25C)
Characteristic Symbol
Rating
Unit
Forward current
I
F
70
mA
Forward current derating (Ta 50C)
I
F
/ C
0.93
mA / C
Peak forward current (100 s pulse, 100pps)
I
FP
1
A
Reverse voltage
V
R
5
V
LE
D
Junction temperature
T
j
125
C
Collector
-emitter voltage
V
CEO
55 V
Collector
-base voltage (TLP531)
V
CBO
80 V
Emitter
-collector voltage
V
ECO
7 V
Emitter
-base voltage (TLP531)
V
EBO
7 V
Collector current
I
C
50
mA
Power dissipation
P
C
150
mW
Power dissipation derating (Ta 25C)
P
C
/ C
-1.5 mW
/
C
Det
e
c
t
or
Junction temperature
T
j
125
C
Storage temperature range
T
stg
-55~125 C
Operating temperature range
T
opr
-55~100 C
Lead soldering temperature (10s)
T
sol
260
C
Total package power dissipation
P
T
250
mW
Total package power dissipation derating (Ta 25C)
P
T
/ C
-2.5 mW
/
C
Isolation voltage (AC, 1min., R.H. 60%)
BV
S
2500
V
rms
Recommends Operating Conditions
Characteristic Symbol
Min.
Typ.
Max.
Unit
Supply voltage
V
CC
5 24 V
Forward current
I
F
16 25 mA
Collector current
I
C
1 10 mA
Operating temperature
T
opr
-25
85 C
TLP531,TLP532
2002-09-25
3
Individual Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Forward voltage
V
F
I
F
= 10mA
1.0
1.15
1.3
V
Reverse current
I
R
V
R
= 5V
10 A
LE
D
Capacitance C
T
V = 0, f = 1MHz
30 pF
Collector
-emitter
breakdown voltage
V
(BR) CEO
I
C
= 0.5mA
55
V
Emitter
-collector
breakdown voltage
V
(BR) ECO
I
E
= 0.1mA
7
V
Collector
-base
breakdown voltage
(TLP531)
V
(BR) CBO
I
C
= 0.1mA
80
V
Emitter
-base
breakdown voltage
(TLP531)
V
(BR) EBO
I
E
= 0.1mA
7
V
V
CE
= 24V
10 100
nA
Collector dark current
I
CEO
V
CE
= 24V, Ta = 85C
2 50 A
Det
e
c
t
or
Capacitance (collector to emitter)
C
CE
V = 0, f = 1MHz
10 pF
Coupled Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
50 200 600
50
150
50
300
100
300
100
600
Current transfer ratio
I
C
/ I
F
I
F
= 5mA, V
CE
= 5V
Rank Y
Rank YG
Rank GR
Rank GB
Rank BL
200
600
%
Collector
-emitter
saturation voltage
V
CE (sat)
I
C
= 2.4mA, I
F
= 8mA
0.4 V
TLP531,TLP532
2002-09-25
4
Isolation Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Capacitance
(input to output)
C
S
V
S
= 0, f = 1MHz
0.8 pF
Isolation resistance
R
S
V
S
= 500V, R.H. 60%
5
10
10
10
14
Isolation voltage
BV
S
AC,
1
minute
2500
V
rms
Switching Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Rise time
t
r
2
Fall time
t
f
3
Turn
-on time
t
ON
3
Turn
-off time
t
OFF
V
CC
= 10V
I
C
= 2mA
R
L
= 100
3
s
Turn
-on time
t
ON
2
Storage time
t
s
15
Turn
-off time
t
OFF
R
L
= 1.9k (Fig.1)
R
BE
= open
V
CC
= 5V, I
F
= 16mA
25
s
Turn
-on time
t
ON
2
Storage time
t
s
12
Turn
-off time
t
OFF
R
L
= 1.9 (Fig.1)
R
BE
= 220k (TLP531)
V
CC
= 5V, I
F
= 16mA
20
s
Fig. 1
Switching time test circui
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