TLP559(IGM)
2002-05-27
1
TOSHIBA PHOTOCOUPLER GaAlAs IRED & PHOTO IC
TLP559(IGM)
TRANSISTOR INVERTER
INVERTER FOR AIR CONDITIONER
LINE RECEIVER
IPM INTERFACES
The TOSHIBA TLP559(IGM) consists of a GaAlAs high-output light
emitting diode and a high speed detector of one chip photo diode-
transistor.
This unit is 8-lead DIP package.
TLP559(IGM) has no internal base connection,and a Faraday shield
integrated on the photodetector chip provides an effective common
mode noise transient immunity.
TLP559(IGM) guarantees minimum and maximum of propagation
delay time,switching time dispersion,and high common mode
transient immunity.There for TLP559(IGM) is suitable for isolation
interface between IPM(Intelligent Power Module) and control IC
circuits in motor control application.
l Isolation Voltage
: 2500 Vrms (Min)
l Common Mode Transient Immunity
:10kV/s (Min)
@V
CM
= 1500 V
l Switching Time
: t
pHL ,
t
pLH
= 0.1s (Min)
= 0.8s (Max)
@I
F
= 10 mA , V
CC
= 15 V , R
L
= 20 k , Ta = 25C
l Switching Time Dispersion : 0.7s (Max)
(|tpLH-tpHL|)
l TTL Compatible
l UL Recognized
: UL1577, File No. E67349
PIN CONFIGURATION(Top view)
1:N.C.
2:ANODE
3:CATHODE
4:N.C.
5:EMITTER
6:COLLECTOR
7:N.C.
8:V
CC
SCHEMATIC
SHIELD
JEDEC
EIAJ
TOSHIBA 11-10C4
Weight: 0.54 g
Unit: mm
TLP559(IGM)
2002-05-27
2
MAXIMUM RATINGS
(Ta = 25C)
CHARACTERISTIC SYMBOL
RATING
UNIT
Forward Current
(Note 1)
I
F
25 mA
Pulse Forward Current
(Note 2)
I
FP
50 mA
Peak Transient Forward Current
(Note 3)
I
FPT
1 A
Reverse Voltage
V
R
5 V
LE
D
Diode Power Dissipation
(Note 4)
P
D
45 mW
Output Current
I
O
8 mA
Peak Output Current
I
OP
16 mA
Output Voltage
V
O
-0.5~20 V
Supply Voltage
V
CC
-0.5~30 V
DE
T
E
CT
OR
Output Power Dissipation
(Note 5)
P
O
100 mW
Operating Temperature Range
T
opr
-55~100
C
Storage Temperature Range
T
stg
-55~125
C
Lead Solder Temperature(10s)
(Note 6)
T
sol
260
C
Isolation Voltage(AC,1min.,R.H.60%,Ta=25C) (Note
7)
BV
S
2500 Vrms
(Note 1) Derate 0.5mA above 70C.
(Note 2) 50% duty cycle,1ms pulse width.
Derate 1.0mA/C above 70C.
(Note 3) Pulse width PW1s,300pps.
(Note 4) Derate 0.9mW/C above 70C.
(Note 5) Derate 2mW/C above 70C.
(Note 6) Soldering portion of lead : up to 2mm from the body of the device.
(Note 7) Device considerd a two terminal device : pins1,2,3 and 4 shorted together and
pins5,6,7 and 8 shorted together.
ELECTRICAL CHARACTERISTICS
(Ta = 25
)
CHARACTERISTIC SYMBOL
TEST
CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
I
F
= 16 mA
1.65 1.85
V
Forward Voltage
Temperature Coefficient
V
F
/Ta I
F
= 16 mA
-2
mV
/C
Reverse Current
I
R
V
R
= 5 V
10 A
LE
D
Capacitance between Terminal
CT
V = 0, f = 1 MHz
45
pF
I
OH (1)
I
F
= 0 mA, V
CC
= V
O
= 5.5 V
3 500
nA
I
OH (2)
I
F
= 0 mA, V
CC
= 30 V
V
O
= 20 V
5
High Level Output Current
I
OH
I
F
= 0 mA, V
CC
= 30 V
V
O
= 20 V, Ta = 70C
50
A
High Level Supply Voltage
I
CCH
I
F
= 0 mA, V
CC
= 30 V
0.01 1 A
Supply Voltage
V
CC
I
CC
= 0.01 mA
30
V
DE
T
E
CT
OR
Output Voltage
V
O
I
O
= 0.5 mA
20
V
TLP559(IGM)
2002-05-27
3
COUPLED ELECTRICAL CHARACTERISTICS
(Ta = 25
)
CHARACTERISTIC SYMBOL
TEST
CONDITION
MIN.
TYP.
MAX.
UNIT
I
F
= 10 mA, V
CC
= 4.5 V
V
O
= 0.4 V
25 35 75
Current Transfer Ratio
I
O
/ I
F
I
F
= 10 mA, V
CC
= 4.5 V
V
O
= 0.4 V, Ta = -25~100C
15
%
Low Level Output Voltage
V
OL
I
F
= 16 mA, V
CC
= 4.5 V
I
O
= 2.4 mA
0.4 V
ISOLATION CHARACTERISTICS
(Ta = 25
)
CHARACTERISTIC SYMBOL
TEST
CONDITION
MIN.
TYP.
MAX.
UNIT
Capacitance Input to Output
CS
V = 0, f = 1 MHz
0.8
pF
Isolation Resistance
R
S
R.H.60%, V
S
= 500 V
510
10
10
14
AC , 1minute
2500
AC , 1second, in oil
5000
Vrms
Isolation Voltage
BV
S
DC , 1minute,in oil
5000
Vdc
SWITCHING CHARACTERISTICS
(Ta = 25
V
CC
= 15 V)
CHARACTERISTIC SYMBOL
TEST
CIR-
CUIT
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
I
F
= 10 mA, R
L
= 20 k 0.1
0.45
0.8
I
F
= 10 mA, R
L
= 20 k
Ta = 0~85C
0.1 0.45 0.9
Propagation Delay Time (HL)
Propagation Delay Time (LH)
t
pHL
t
pLH
I
F
= 10 mA, R
L
= 20 k
Ta = -25~100C
0.1 0.45 1.0
s
I
F
= 10 mA, R
L
= 20 k
0.15 0.7
I
F
= 10 mA, R
L
= 20 k
Ta = 0~85C
0.25 0.8
Switching Time
Dispersion between ON
and OFF
|t
pLH
-t
pHL
|
1
I
F
= 20 mA, R
L
= 20 k
Ta = -25~100C
0.25 0.9
s
Common Mode
Transient Immunity at
Logic High Output (Note 8)
CM
H
I
F
= 0 mA,
V
CM
= 1500 V
p-p,
R
L
= 20 k
10000 15000
V /s
Common Mode
Transient Immunity at
Logic Low Output (Note 8)
CM
L
2
I
F
=10 mA,
V
CM
= 1500 V
p-p,
R
L
= 20 k
-10000 -15000
V /s
(Note 8) CM
L
is the maximum rate of fall of the common mode voltage that can be
sustained with the output voltage in the logic low state(Vo<1V).
CM
H
is the maximum rate of rise of the common mode voltage that can be
sustained with the output voltage in the logic high state(Vo>4V).
(Note 9) Maximum electrostatic discharge voltage for any pins : 100V(C=200pF,R=0)
TLP559(IGM)
2002-05-27
4
TEST CIRCUIT 1 : Switching time test circuit
PULSE INPUT
PW=100
DUTY RATIO=1/10
IF MONITOR
OUTPUT
MONITOR
TEST CIRCUIT 2 : Common mode noise immunity test circuit
PULSE GENERATOR
OUTPUT
MONITOR
10mA
)
s
(
f
t
)
V
(
1200
L
CM
)
s
(
r
t
)
V
(
1200
H
CM
m
=
m
=
TLP559(IGM)
2002-05-27
5
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
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conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
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The information contained herein is subject to change without notice.
000707EBC
RESTRICTIONS ON PRODUCT USE
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