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Электронный компонент: TLP561G

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TLP561G
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo-Triac
TLP561G
Triac Driver
Programmable Controllers
AC-Output Module
Solid State Relay



The TOSHIBA TLP561G consists of a zero voltage crossing turn-on
photo-triac optically coupled to a gallium arsenide infrared emitting
diode in a six lead plastic DIP package.




Peak off-state voltage: 400V(min.)
On-state current: 100mA(max.)
Isolation voltage: 2500V
rms
(min.)
UL recognized: file no. E67349
Isolation operating voltage: 2500V
ac
or 300V
dc
for isolation
groupe C*
1
Trigger LED current
Trigger LED Current (mA)
V
T
= 6V, Ta = 25C
Classi
-
fication*
Min. Max.
Marking Of
Classification
(IFT5)
5
T5
(IFT7)
7
T5,
T7
Standard
10
T5, T7, blank
*Ex. (IFT5); TLP561G (IFT5)
(Note) Application type name for certification test, please
use standard product type name, i.e.
TLP561G (IFT5): TLP561G
*1: According to VDE0110, table 4.

Pin Configuration
(top view)
1 : ANODE
2 : CATHODE
3 : N.C.
4 : TERMINAL 1
6 : TERMINAL 2
1
2
4
6
3
ZC
Unit in mm
TOSHIBA 11
-7A9
Weight: 0.39g
TLP561G
2002-09-25
2
Maximum Ratings
(Ta = 25C)
Characteristic Symbol
Rating
Unit
Forward current
I
F
50
mA
Forward current derating (Ta 53C)
I
F
/ C
-0.7
mA / C
Peak forward current (100s pulse, 100pps)
I
FP
1
A
Reverse voltage
V
R
5
V
LE
D
Junction temperature
T
j
125
C
Off
-state ontput terminal voltage
V
DRM
400 V
Ta = 25C
100
On
-state RMS current
Ta = 70C
I
T(RMS)
50
mA
On
-state current derating (Ta 25C)
I
T
/ C
-1.1
mA / C
Peak on
-state current (100s pulse, 120pps)
I
TP
2
A
Peak nonrepetitive surge current
(Pw = 10ms, DC = 10%)
I
TSM
1.2 A
Det
e
c
t
or
Junction temperature
T
j
115
C
Storage temperature range
T
stg
-55~125 C
Operating temperature range
T
opr
-40~100 C
Lead soldering temperature (10s)
T
sol
260
C
Isolation voltage (AC, 1 min., R.H. 60%)
BV
S
2500
V
rms
Recommended Operating Conditions
Characteristic Symbol
Min.
Typ.
Max.
Unit
Supply voltage
V
AC
120
V
ac
Forward current
I
F
15
20
25
mA
Peak on
-state current
I
TP
1 A
Operating temperature
T
opr
-25
85 C
TLP561G
2002-09-25
3
Individual Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Forward voltage
V
F
I
F
= 10mA
1.0
1.15
1.3
V
Reverse current
I
R
V
R
= 5V
10 A
LE
D
Capacitance C
T
V = 0, f = 1MHz
30 pF
Peak off
-state current
I
DRM
V
DRM
= 400V
10 100
nA
Peak on
-state voltage
V
TM
I
TM
= 100mA
1.7 3.0 V
Holding current
I
H
0.6 mA
Critical rate of rise of
off
-state voltage
dv / dt
V
in
= 120V
rms
, Ta = 85C
(Fig.1)
200 500 V
/
s
Det
e
c
t
or
Critical rate or rise of
commutating voltage
dv / dt (c)
V
in
= 30V
rms
, I
T
= 15mA
(Fig.1)
0.2 V
/
s
Coupled Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Trigger LED current
I
FT
V
T
= 3V, R
L
= 100
5 10
mA
Inhibit voltage
V
IH
I
F
= rated I
FT
40 V
Leakage in inhibited state
I
IH
I
F
= rated I
FT
V
T
= rated V
DRM
100
300
A
Capacitance
(input to output)
C
S
V
S
= 0, f = 1MHz
0.8 pF
Isolation resistance
R
S
V
S
= 500V
510
10
10
14
AC, 1 minute
2500
AC, 1 second, in oil
5000
V
rms
Isolation voltage
BV
S
DC, 1 minute, in oil
5000
V
dc
Fig.1: dv / dt test circuit
dv / dt
(
)
dv / dt
5V, V
CC
0V
1
2
3
6
4
R
in
4k
120
V
CC
V
in
+
R
L
TLP561G
2002-09-25
4

Ambient temperature Ta (C)
I
F
Ta
A
l
l
o
w
abl
e f
o
rw
ard
cu
rr
ent
I
F
(
m
A
)
120
100
80
60
20 40
0
20
100
80
0
60
40
20
Ambient temperature Ta (C)
120
I
T(RMS)
Ta
R.
M.

S
.
O
n
-s
t
a
te c
u
r
r
e
n
t
I
T
(R
MS
)

(
m
A
)
100
80
60
20 40
0
20
200
160
0
120
80
40
Duty cycle ratio DR
I
FP
D
R
A
l
l
o
w
abl
e p
u
l
s
e
fo
rw
a
r
d
cu
rre
nt
I
FP
(
m
A
)
3
3
10
-3
3
3000
10
1000
500
30
100
50
300
10
-1
10
-2
3
Pulse width 100s
Ta = 25C
10
0
I
F
V
F
Fo
rw
ar
d c
u
r
r
e
n
t I
F
(
m
A
)
Forward voltage VF (V)
100
50
0.3
5
0.5
30
3
1
10
0.1
0.6
0.8
1.0
1.2 1.4 1.6
1.8
Ta = 25C
V
F
/
Ta I
F
Fo
rw
ar
d v
o
l
t
ag
e t
e
m
per
atu
r
e
coef
fi
ci
en
t
V
F
/
Ta
(
m
V
/

C
)
3.2
2.0
2.4
2.8
0.4
1.6
1.2
0.8
Forward current I
F
(mA)
0.1 0.3 1 3
10 30
0.5 5 50
I
FP
V
FP
P
u
l
s
e f
o
rw
ar
d c
u
r
r
en
t I
FP
(
m
A
)
Pulse forward voltage VFP (V)
1000
500
0.6
3
50
5
300
30
10
100
1
1.0
1.4
1.8
2.2 2.6
Pulse width10s
Repetitive
Frequency = 100Hz
Ta = 25
TLP561G
2002-09-25
5

100
80
60
20
40
0
20
3
1.2
1
0.5
0.3
0.1
40
2
Ambient temperature Ta ()
Ho
ld
in
g
c
u
r
r
e
n
t I
H
(arbitrary unit)
Normalized I
H
Ta
Ambient temperature Ta ()
T
r
i
g
ge
r LE
D
cu
rr
ent
I
FT
(arbitrary unit)
Normalized I
FT
Ta
VT = 3V
100
80
60
20
40
0
20
3
1.2
1
0.5
0.3
0.1
40
2
Normalized I
DRM
Ta
Ambient temperature Ta ()
10
3
80
60
40
20
0
P
eak
of
f
-
state
cu
rr
ent
I
DRM
(a
rbi
t
ra
ry
u
n
i
t
)
100
10
2
10
1
10
0
VDRM = Rated
Ambient temperature Ta ()
Of
f-s
t
at
e
out
put
te
rmi
nal
vol
t
ag
e
V
DRM
(a
rb
i
t
ra
r
y

u
n
i
t
)
Normalized V
DRM
Ta
1.4
100
80
0
40
1.2
1.0
0.8
0.6
0.4
0.2
60
40
20
20
Inhi
bi
t v
o
l
t
a
ge
V
I
H
(arbitrary unit)
100
80
60
20
40
0
20
3
1.2
1
0.5
0.3
0.1
40
2
Ambient temperature Ta ()
Normalized V
IH
Ta
IF = Rated IFT
Inhi
bi
t c
u
rr
en
t I
IH
(arbitrary unit)
100
80
60
20
40
0
20
3
1.2
1
0.5
0.3
0.1
40
2
Ambient temperature Ta ()
Normalized I
IH
Ta
IF = Rated IFT
VT = Rated VDRM