TLP570,TLP571
2002-09-25
1
TOSHIBA Photocoupler GaAs IRed & Photo-Transistor
TLP570,TLP571
Programmable Controllers
AC / DC-Input Module
Solid State Relay
The TOSHIBA TLP570 and TLP571 consist of a darlington connected
photo-transistor optically coupled to a gallium arsenide infrared
emitting diode in a six lead plastic DIP package.
TLP570 is no-base internal connection for high-EMI environments.
l Collector-emitter voltage: 35V (min.)
l Current transfer ratio: 1000% (min.)
l Isolation voltage: 2500Vrms (min.)
l UL recognized: UL1577, file no. E67349
Pin Configurations
(top view)
Unit in mm
TOSHIBA 11-7A8
TLP570,TLP571
2002-09-25
2
Maximum Ratings
(Ta = 25C)
Characteristic Symbol
Rating
Unit
Forward current
I
F
70
mA
Forward current derating (Ta 25C)
I
F
/ C
-0.7
mA / C
Peak forward current (100s pulse, 100pps)
I
FP
1
A
Reverse voltage
V
R
5
V
LE
D
Junction temperature
T
j
125
C
Collector
-emitter voltage
V
CEO
35 V
Collector
-base voltage (TLP571)
V
CBO
80 V
Emitter
-collector voltage
V
ECO
7 V
Emitter
-base voltage (TLP571)
V
EBO
7 V
Collector current
I
C
150
mA
Power dissipation
P
C
150
mW
Power dissipation derating (Ta 25C)
P
C
/ C
-1.5 mW
/
C
Det
e
c
t
or
Junction temperature
T
j
125
C
Storage temperature range
T
stg
-55~125 C
Operating temperature range
T
opr
-55~100 C
Lead soldering temperature (10s)
T
sold
260 C
Total package power dissipation
P
T
250
mW
Total package power dissipation derating (Ta 25C)
P
T
/ C
-2.5 mW
/
C
Isolation voltage (AC, 1 min., R.H. 60%)
(Note 1)
BV
S
2500
V
rms
(Note 1)
Device considered a two terminal: Pins1, 2 and 3 shorted together and pins 4, 5 and 6 shorted
together.
Recommends Operating Conditions
Characteristic Symbol
Min.
Typ.
Max.
Unit
Supply voltage
V
CC
5 24 V
Forward current
I
F
16 25 mA
Collector current
I
C
50 mA
Operating temperature
T
opr
-25
85 C
TLP570,TLP571
2002-09-25
3
Individual Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Forward voltage
V
F
I
F
= 10 mA
1.0
1.15
1.3
V
Reverse current
I
R
V
R
= 5 V
10 A
LE
D
Capacitance C
T
V = 0, f = 1 MHz
30 pF
Collector
-emitter
breakdown voltage
V
(BR)CEO
I
C
= 1 mA
35
V
Emitter
-collector
breakdown voltage
V
(BR)ECO
I
E
= 0.1 mA
7
V
Collector
-base
breakdown voltage (TLP571)
V
(BR)CBO
I
C
= 0.1 mA
80
V
Emitter
-base
breakdown voltage (TLP571)
V
(BR)EBO
I
E
= 0.1 mA
7
V
V
CE
= 24 V
10 200
nA
Collector dark current
I
CEO
V
CE
= 24 V, Ta = 85C
300
A
Collector dark current (TLP571)
I
CER
V
CE
= 24 V, Ta = 85C
R
BE
= 10 M
0.5 10 A
Collector dark current (TLP571)
I
CBO
V
CB
= 10 V
0.01 nA
DC forward current gain (TLP571)
h
FE
V
CE
= 5 V, I
C
= 10 mA
50k
Det
e
c
t
or
Capacitance (collector to emitter)
C
CE
V = 0, f = 1 MHz
10 pF
Coupled Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
MIn.
Typ.
Max.
Unit
Current transfer ratio
I
C
/ I
F
I
F
= 1 mA, V
CE
= 1 V
1000
2000
%
Saturated CTR
I
C
/ I
F (sat)
I
F
= 10 mA, V
CE
= 1 V
500
%
Base photo
-current (TLP571)
I
PB
I
F
= 1 mA, V
CB
= 1 V
2 A
I
C
= 10 mA, I
F
= 1 mA
1.0
Collector
-emitter
saturation voltage
V
CE (sat)
I
C
= 100 mA, I
F
= 10 mA
0.3
1.2
V
TLP570,TLP571
2002-09-25
4
Isolation Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Capacitance
(input to output)
C
S
V
S
= 0, f = 1 MHz
0.8 pF
Isolation resistance
R
S
V
S
= 500 V, R.H. 60%
510
10
10
14
AC, 1 minute
2500
AC, 1 second, in oil
5000
V
rms
Isolation voltage
BV
S
DC, 1 minute, in oil
5000
V
dc
Switching Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Rise time
t
r
40
Fall time
t
f
30
Turn
-on time
t
ON
45
Turn
-off time
t
OFF
V
CC
= 10 V
I
C
= 10 mA
R
L
= 100
35
s
Turn
-on time
t
ON
5
Storage time
t
s
20
Turn
-off time
t
OFF
R
L
= 180 (Fig.1)
R
BE
= open
V
CC
= 10 V, I
F
= 10 mA
100
s
Turn
-on time
t
ON
5
Storage time
t
s
15
Turn
-off time
t
OFF
R
L
= 180 (Fig.1)
R
BE
= 10M (TLP571)
V
CC
= 10 V, I
F
= 10 mA
60
s
Fig. 1 Switching time test circuit
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