TLP599B
2002-09-25
1
TOSHIBA Photocoupler Photo Relay
TLP599B
Telecommunication
Data Acquisition
Measurement Instrumentation
The TOSHIBA TLP599B consists of a gallium arsenide infrared
emitting diode optically coupled to a photo-MOS FET in a six lead
plastic DIP (DIP6).
The TLP599B is a bi-directional switch which can replace mechanical
relays in many applications.
Peak off-state voltage: 100V (min.)
On-state current: 200mA (max.) (A connection)
On-state resistance: 4 (max.) (A connection)
Insulation thickness: 0.4mm(max.)
Isolation voltage: 2500Vrms (min.)
UL recognized: UL1577, file no. E67349
Trigger LED current (Ta = 25C)
Trigger LED Current
(mA)
@I
ON
= 200mA
Classification
(Note
1)
Min. Max.
Marking Of
Classification
(IFT2)
2
T2
Standard
5 T2,
blank
(Note 1): Application type name for certification
test, please use standard product type
name, i.e.
TLP599B (IFT2) : TLP599B
Pin Configuration
(top view)
1. : Anode
2. : Cathode
3. : NC
4. : Drain D1
5. : Source
6. : Drain D2
1
3
6
4
2
5
Schematic
2
1
6
5
4
Unit in mm
TOSHIBA 11
-7A8
Weight: 0.4g
TLP599B
2002-09-25
2
Maximum Ratings
(Ta = 25C)
Characteristic Symbol
Rating
Unit
Forward current
I
F
50 mA
Forward current derating (Ta 25C)
I
F
/ C
-0.5
mA / C
Peak forward current (100 s pulse, 100 pps)
I
FP
1 A
Reverse voltage
V
R
5 V
LE
D
Junction temperature
T
j
125 C
Off
-state output terminal voltage
V
OFF
100 V
A connection
200
B connection
300
On
-state RMS current
C connection
I
ON
400
mA
A connection
-2
B connection
-3
On
-state current derating(Ta 25C)
C connection
I
ON
/ C
-4
mA / C
Det
e
c
t
or
Junction temperature
T
j
125 C
Storage temperature range
T
stg
-55~125 C
Operating temperature range
T
opr
-40~85 C
Lead soldering temperature (10 s)
T
sol
260 C
Isolation voltage (AC, 1 min., R.H. 60%)
(Note 2)
BV
S
2500 Vrms
(Note 2): Device considered a two
-terminal device : Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6
shorted together.
Recommended Operating Conditions
Characteristic Symbol
Min.
Typ.
Max.
Unit
Supply voltage
V
DD
80 V
Forward current
I
F
7.5
15
25
mA
On
-state current
I
ON
200
mA
Operating temperature
T
opr
-20
80 C
Circuit Connections
1
2
3
6
5
4
LOAD
AC
DC
or
1
2
3
6
5
4
LOAD
DC
1
2
3
6
5
4
LOAD
DC
A connection B connection C connection
TLP599B
2002-09-25
3
Individual Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Forward voltage
V
F
I
F
= 10 mA
1.0
1.15
1.3
V
Reverse current
I
R
V
R
= 5 V
10 A
LE
D
Capacitance C
T
V
= 0, f = 1 MHz
30 pF
Off
-state current
I
OFF
V
OFF
= 100 V
1 A
Det
e
c
t
or
Capacitance C
OFF
V
= 0, f = 1 MHz
pF
Coupled Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Trigger LED current
I
FT
I
ON
= 200 mA
1 5 mA
A connection
I
ON
= 200 mA, I
F
= 10 mA
3.0 4
B connection
I
ON
= 300 mA, I
F
= 10 mA
1.5 2
On
-state
resistance
C connection
R
ON
I
ON
= 400 mA, I
F
= 10 mA
0.75 1
Isolation Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Capacitance input to output
C
S
V
S
= 0, f = 1 MHz
0.8 pF
Isolation resistance
R
S
V
S
= 500 V, R.H. 60%
5
10
10
10
14
AC, 1 minute
2500
AC, 1 second (in oil)
5000
Vrms
Isolation voltage
BV
S
DC, 1 minute (in oil)
5000
V
dc
Switching Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Turn
-on time
t
on
2
Turn
-off time
t
off
V
DD
= 20 V, R
L
= 200
I
F
= 10 mA
2
ms
Switching Time Test Circuit
t
off
t
on
10%
90%
V
OUT
I
F
6
1
V
DD
V
OUT
R
L
4
2
I
F
TLP599B
2002-09-25
4
I
F
V
F
Forward voltage V
F
(V)
Fo
rw
ar
d
c
u
r
r
en
t I
F
(m
A
)
100
0.1
0.6
50
30
10
5
3
1
0.5
0.3
0.8 1.0 1.2 1.4 1.6 1.8
Ta = 25C
V
F
/ T
a
I
F
Forward current I
F
(mA)
Forward v
o
l
t
age
t
e
m
perat
ure
c
oef
f
i
c
i
ent
V
F
/
T
a
(m
V
/
C
)
2.8
0.4
0.3
50
0.1
0.8
1.2
1.6
2.0
2.4
0.5 1
3 5 10
30
I
FP
V
FP
Pulse forward voltage V
FP
(V)
P
u
l
s
e
f
o
rward
c
u
r
rent
I
FP
(m
A
)
1000
1
0.6
500
300
100
50
30
10
5
3
1.0 1.4 1.8 2.2 2.6 3.0
Pulse width 10 s
Repetitive frequency
= 100 Hz
Ta = 25C
I
F
T
a
Amebient temperature Ta (C)
A
l
l
o
w
abl
e fo
rw
a
r
d
cu
rre
nt
I
F
(
m
A
)
100
0
20
80
60
40
20
0 20 40 60 80 100
120
I
FP
D
R
Duty cycle ratio D
R
A
l
l
o
w
abl
e p
u
l
s
e
fo
rw
a
r
d c
u
r
r
e
n
t
I
FP
(
m
A
)
5000
10
3000
1000
500
300
100
50
30
10
3
3 10
2
3 10
1
3 10
0
Pulse width 100 s
Ta = 25C
I
ON
(RMS) T
a
Amebient temperature Ta (C)
On-s
t
a
t
e
c
u
r
r
en
t I
ON
(R
MS
)
(mA
)
300
0
20
250
200
150
50
0 20 40 60 80 100
100
C connection
B connection
A connection
TLP599B
2002-09-25
5
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EBC
RESTRICTIONS ON PRODUCT USE
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