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Электронный компонент: TLP751

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TLP751
2002-09-25
1
TOSHIBA
Photocoupler
GaAAs Ired + Photo IC
TLP751
Digital Logic Ground Isolation
Line Receiver
Microprocessor System Interfaces
Switching Power Supply Feedback Control
Analog Signal Isolation


The TOSHIBA TLP751 consists of GaAAs high-output light
emitting diode and a high speed detector of one chip photo diode-
transistor. This unit is 8-lead DIP.
TLP751 has internal base connection. This base pin should be used for
analog application or enable operation. If base pin is open, output signal
will be noisy by environmental condition. For this case, TLP750 is
suitable.


Switching speed: t
pHL
= 0.3s (typ.)
t
pLH
= 0.5s (typ.)(R
L
=1.9k)
TTL compatible
UL recognized: UL1577, file no. E67349
BSI approved: BS EN60065: 1994,
Certificate no. 7613
BS EN60950: 1992,
Certificate no. 7614
Isolation voltage: 5000Vrms(min.)
Option(D4)type
VDE approved: DIN VDE0884 / 06.92,
Certificate no. 68384
Maximum operating insulation voltage: 890V
PK
Highest permissible over voltage: 8000V
PK
(Note) When a VDE0884 approved type is needed,
please designate the "Option(D4)"

Creepage distance: 6.4mm(min.)
Clearance:
6.4mm(min.)
Insulation thickness: 0.4mm(min.)

Pin Configuration(top view)
Schematic

TOSHIBA 11-10C4
Weight: 0.54g
Unit in mm
TLP751
2002-09-25
2
Maximum Ratings
(Ta = 25C)
Characteristic Symbol
Rating
Unit
Forward current
(Note 1)
I
F
25 mA
Pulse forward current
(Note 2)
I
FP
50 mA
Peak transient forward
current (Note
3)
I
FPT
1 A
Reverse voltage
V
R
5 V
LE
D
Diode power dissipation
(Note 4)
P
D
45 mW
Output current
I
O
8 mA
Peak output current
I
OP
16 mA
Output voltage
V
O
-0.5~15 V
Supply voltage
V
CC
-0.5~15 V
Base current
I
B
5
mA
Output power dissipation
(Note 5)
P
O
100 mW
Det
e
c
t
or
Emitter
-base reverse voltage
V
EB
5
V
Operating temperature range
T
opr
-55~100 C
Storage temperature range
T
stg
-55~125 C
Lead solder temperature(10s)
(Note 6)
T
sol
260 C
Isolation voltage
(AC,1min.,R.H. 60%)
(Note 7)
BV
S
5000 Vrms
(Note 1) Derate 0.8mA above 70C
(Note 2) 50% duty cycle,1ms pulse width.
Derate 1.6mA / C above 70C
(Note 3) Pulse width 1s,300pps.
(Note 4) Derate 0.9mW / C above 70C
(Note 5) Derate 2mW / C above 70C
(Note 6) Soldering portion of lead : up to 2mm from the body of the device.
(Note 7) Device considered a two terminal device: Pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted
together.
TLP751
2002-09-25
3
Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Forward voltage
V
F
I
F
= 16 mA
1.65 1.85
V
Forward voltage
Temperature coefficient
V
F
/ Ta I
F
= 16 mA
-2
mV / C
Reverse current
I
R
V
R
= 5 V
10 A
LE
D
Capacitance between
terminal
CT V
F
= 0, f = 1 MHz
45 pF
I
OH (1)
I
F
= 0 mA, V
CC
= V
O
= 5.5 V
3 500
nA
I
OH (2)
I
F
= 0 mA, V
CC
= V
O
= 15 V
5
High level output
current
I
OH
I
F
= 0 mA, V
CC
= V
O
= 15 V
Ta = 70C
50
A
Det
e
c
t
or
High level supply
voltage
I
CCH
I
F
= 0 mA, V
CC
= 15 V
0.01 1 A
Current transfer ratio
I
O
/ I
F
I
F
= 16 mA, V
CC
= 4.5 V
V
O
= 0.4 V
10 30 %
Low level output
voltage
V
OL
I
F
= 16 mA, V
CC
= 4.5 V
I
O
= 1.1 mA
0.4 V
resistance(input
-output) R
S
R.H. 60%, V
S
= 500 V
DC
(Note7)
110
12
10
14
Coupl
ed
Capacitance
(input
-output)
C
S
V
S
= 0, f = 1 MHz
(Note7)
0.8 pF



Switching Characteristics
(Ta = 25C, V
CC
= 5V)
Characteristic Symbol
Test
Cir-
cuit
Test Condition
Min.
Typ.
Max.
Unit
Propagation delay time
(HL)
t
pHL
I
F
= 016mA, V
CC
= 5V,
R
L
= 4.1 k
0.2 s
Propagation delay time
(LH)
t
pLH
1
I
F
= 160mA
V
CC
= 5V, R
L
= 4.1 k
1.0 s
Common mode transient
immunity at logic high
output (Note
8)
CM
H
I
F
= 0 mA, V
CM
= 200 V
p
-p
R
L
= 4.1 k
400 V
/
s
Common mode transient
immunity at logic low
output (Note
8)
CM
L
2
I
F
=16 mA
V
CM
= 200 V
p
-p
R
L
= 4.1 k
-1000
V
/
s
TLP751
2002-09-25
4
(Note 8) CM
L
is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage
in the logic low state(V
O
< 0.8V).
CM
H
is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage
in the logic high state(V
O
> 2.0V).
(Note 9) Maximum electrostatic discharge voltage for any pins: 100V (C = 200pF, R = 0).
Test Circuit 1 : Switching Time Test Circuit







Test Circuit 2 : Common Mode Noise Immunity Test Circuit


TLP751
2002-09-25
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