TPC6103
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPC6103
Notebook PC Applications
Portable Equipment Applications
Low drain-source ON resistance: R
DS (ON)
= 29 m (typ.)
High forward transfer admittance: |Y
fs
| = 13 S (typ.)
Low leakage current: I
DSS
= -10 A (max) (V
DS
= -12 V)
Enhancement mode: V
th
= -0.5 to -1.2 V
(V
DS
= -10 V,I
D
= -200 A)
Maximum Ratings
(Ta
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
-12 V
Drain-gate voltage (R
GS
= 20 k) V
DGR
-12 V
Gate-source voltage
V
GSS
8 V
DC (Note
1)
I
D
-5.5
Drain current
Pulse (Note 1)
I
DP
-22
A
Drain power dissipation
(t
= 5 s)
(Note
2a)
P
D
2.2
W
Drain power dissipation
(t
= 5 s)
(Note
2b)
P
D
0.7
W
Single pulse avalanche energy
(Note
3)
E
AS
5.3
mJ
Avalanche current
I
AR
-2.75 A
Repetitive avalanche energy (Note 4)
E
AR
0.22
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150 C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to
ambient (t
= 5 s)
(Note 2a)
R
th (ch-a)
56.8
C/W
Thermal resistance, channel to
ambient (t
= 5 s)
(Note 2b)
R
th (ch-a)
178.5
C/W
Note 1, (ote 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-3T1A
Weight: 0.011 g (typ.)
Circuit Configuration
6 4
1 2 3
5
TPC6103
2004-07-06
2
Electrical Characteristics
(Ta
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 8 V, V
DS
= 0 V
10
A
Drain cut-off current
I
DSS
V
DS
= -12 V, V
GS
= 0 V
-10
A
V
(BR) DSS
I
D
= -10 mA, V
GS
= 0 V
-12
Drain-source breakdown voltage
V
(BR) DSX
I
D
= -10 mA, V
GS
= 8 V
-4
V
Gate threshold voltage
V
th
V
DS
= -10 V, I
D
= -200 A
-0.5
-1.2 V
R
DS (ON)
V
GS
= -1.8 V, I
D
= -1.4 A
65 90
R
DS (ON)
V
GS
= -2.5 V, I
D
= -2.8 A
42 55
Drain-source ON resistance
R
DS (ON)
V
GS
= -4.5 V, I
D
= -2.8 A
29 35
m
Forward transfer admittance
|Y
fs
| V
DS
= -10 V, I
D
= -2.8 A
6.5 13
S
Input capacitance
C
iss
1520
Reverse transfer capacitance
C
rss
330
Output capacitance
C
oss
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
380
pF
Rise time
t
r
9.5
Turn-on time
t
on
16
Fall time
t
f
28
Switching time
Turn-off time
t
off
Duty <= 1%, t
w
= 10 s
74
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
20
Gate-source charge
Q
gs
15
Gate-drain ("miller") charge
Q
gd
V
DD
- -10 V, V
GS
= -5 V,
I
D
= -5.5 A
5
nC
Source-Drain Ratings and Characteristics
(Ta
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse (Note 1)
I
DRP
-- --
--
-22 A
Forward voltage (diode)
V
DSF
I
DR
= -5.5 A, V
GS
= 0 V
--
--
1.2
V
R
L
=
2.
1
V
DD
- -6 V
-5 V
V
GS
0 V
4.
7
I
D
= -2.8 A
V
OUT
TPC6103
2004-07-06
3
Marking
(Note 5)
Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t
= 5 s)
(b) Device mounted on a glass-epoxy board (b) (t
= 5 s)
Note 3: V
DD
= -10 V, T
ch
= 25C (initial), L = 0.5 mH, R
G
= 25 , I
AR
= -2.75 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5:
on lower left of the marking indicates Pin 1.
(a)
FR-4
25.4
25.4 0.8
Unit:
(mm)
(b)
FR-4
25.4
25.4 0.8
Unit:
(mm)
Part No.
(or abbreviation code)
S3C
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot code (month)
Lot No.
Pin #1
Lot code
(year)
Product-specific code
TPC6103
2004-07-06
4
Fo
rwar
d t
r
a
n
sfe
r
ad
mi
ttanc
e
|
Y
fs
| (S)
Dr
ai
n-
s
o
u
r
ce
vo
lt
ag
e
V
DS
(V
)
Drain-source voltage VDS (V)
I
D
V
DS
D
r
a
i
n
c
u
r
r
en
t
I
D
(A
)
Drain-source voltage VDS (V)
I
D
V
DS
Dr
a
i
n
c
u
r
r
en
t
I
D
(A)
Gate-source voltage VGS (V)
I
D
V
GS
D
r
ain
cu
rre
nt
I D
(A)
Gate-source voltage VGS (V)
V
DS
V
GS
Drain current ID (A)
|Y
fs
| I
D
Drain current ID (A)
Drain
-
so
urc
e
on resis
t
a
n
c
e
R
DS
(O
N)
(
m
)
R
DS (ON)
I
D
0
0
-1
-2
-3
-4
-5
-0.4
-0.8
-1.2
-2.0
Common source
Ta
= 25C Pulse test
VGS = -1.4 V
-4, -4.5
-5
-1.6
-3
-2.5 -2
-1.9
-1.8
-1.7
-1.6
-1.5
0
-1
-2
-3
-4
-5
-1.7
-2.5
-1.6
VGS = -1.4 V
-2
-3
0
-2
-4
-6
-8
-10
Common source
Ta
= 25C Pulse test
-1.9
-1.8
-5
-4
Ta
= -55C
0
-2
-4
-6
-8
-10
0
-0.5
-1
-1.5
-2
-2.5
100C
25C
Common source
VDS = -10 V
Pulse test
0
-0.2
-0.4
-0.6
-0.8
-1
0
-2
-4
-6
-8
-10
-1.1 A
-2.2 A
Common source
Ta
= 25C
Pulse test
ID = -4.5 A
0.1
1
10
100
-0.1
-1
-10
-100
100C
25C
Ta
= -55C
Common source
VDS = -10 V
Pulse test
0.3
3
30
-0.3
-3
-30
0.01
1
-0.1
-1
-10
-100
0.1
-2.5 V
VGS = -4.5 V
-1.8 V
Common source
Ta
= 25C
Pulse test
0.03
0.3
-0.3
-3
-30
TPC6103
2004-07-06
5
Ambient temperature Ta (
C)
R
DS (ON)
Ta
Drain
-
so
u
r
c
e
on resis
t
a
n
ce
R
DS
(O
N)
(m
)
Drain-source voltage VDS (V)
I
DR
V
DS
Drain
r
e
v
e
r
s
e c
u
r
r
e
n
t
I DR
(
A
)
Drain-source voltage VDS (V)
Capacitance V
DS
C
apaci
t
anc
e
C
(
p
F)
Ambient temperature Ta (
C)
V
th
Ta
Gate
th
res
hol
d vol
t
a
g
e
V
th
(
V
)
Ambient temperature Ta (
C)
P
D
Ta
Drain
po
w
e
r
diss
i
p
a
t
ion
P
D
(W
)
G
a
te
-so
u
r
c
e v
o
l
t
age
V
GS
(V
)
Total gate charge Qg (nC)
Dynamic input/output characteristics
D
r
a
i
n-
s
our
c
e
vo
l
t
ag
e V
DS
(V)
10
100
1000
10000
-0.1
-1
-10
-100
Crss
Coss
Ciss
Common source
Ta
= 25C
f
= 1 MHz
VGS = 0 V
-0.3
-3
-30
30
300
3000
0
-0.5
-1.5
-2.0
-80
-40
0
40
80 160
Common source
VDS = -10 V
ID = -200 A
Pulse test
120
-1.0
-1
-10
0 0.4
0.8
1.2 1.6 2.0
-100
Common source
Ta
= 25C
Pulse test
-2.0
-1
VGS = 0 V
-4.5
-3
-30
-1.8
0
0
0.5
1
1.5
2
2.5
40 80 120
160
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
(1) t
= 5 s
(2) t
= 5 s
(1) DC
(2) DC
0
0
8
16
-4
-12
-20
0
-2
-6
-10
-8
24 32 40
-8
-16
-4
-5 V
VDD = -10 V
VGS
VDD = -10 V
-5
-2.5 V
Common source
ID = -6 A
Ta
= 25C
Pulse test
-2.5 V
160
0
40
80
120
-80
-40 0 40 80
160
120
Common source
Pulse test
VGS = -1.8 V
ID = -1.1A
-2.2 A
ID = -1.1A
-4.5 A
-2.5 A
ID = -1.1 A, -2.2 A, -4.5 A
-2.5 V
-4.5 V
TPC6103
2004-07-06
6
-0.001
-0.01 -0.03 -0.1 -0.3
-1
-3
-10
-100
-30
-0.003
-0.01
-0.03
-0.1
-0.3
-10
-1
-3
-100
-30
*: Single nonrepetitive pulse
Ta
= 25C
Curves must be derated
linearly with increase in
temperature
ID max (pulsed)*
10 ms*
1 ms*
VDSS max
r
th
t
w
Pulse width tw (s)
T
r
a
n
s
i
e
n
t t
h
e
r
m
a
l i
m
pe
da
nce
r th
(
C/W
)
0.1
0.001 0.01 0.1
10
100
1000
1
0.3
3
30
100
300
1000
Single pulse
Device mounted on a glass-
epoxy board (b) (Note 2b)
1
10
Safe operating area
Drain-source voltage VDS (V)
Dr
a
i
n c
u
r
r
en
t
I D
(A)
Device mounted on a glass-
epoxy board (a) (Note 2a)
TPC6103
2004-07-06
7
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
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