TPC8003
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TPC8003
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Small footprint due to small and thin package
Low drain-source ON resistance : R
DS
(ON)
= 5.4 m (typ.)
High forward transfer admittance : |Y
fs
| = 21 S (typ.)
Low leakage current : I
DSS
= 10 A (max) (V
DS
= 30 V)
Enhancement mode : V
th
= 0.8~2.5 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta = 25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
30 V
Drain-gate voltage (R
GS
= 20 k)
V
DGR
30 V
Gate-source voltage
V
GSS
20 V
DC (Note
1)
I
D
13
Drain current
Pulse (Note
1)
I
DP
52
A
Drain power dissipation
(t = 10 s)
(Note
2a)
P
D
2.4
W
Drain power dissipation
(t = 10 s)
(Note
2b)
P
D
1.0
W
Single pulse avalanche energy
(Note
3)
E
AS
220
mJ
Avalanche current
I
AR
13
A
Repetitive avalanche energy
(Note 2a) (Note 4)
E
AR
0.24
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55 to 150
C
Note 1, Note 2, Note 3 and Note 4: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with
caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
TPC8003
2004-07-06
2
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
R
th (ch-a)
52.1
C/W
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
R
th (ch-a)
125
C/W
Marking
(Note 5)
Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: V
DD
= 24 V, T
ch
= 25C (initial), L = 1.0 mH, R
G
= 25 , I
AR
= 13 A
Note 4: Reptitve rating: pulse width limited by maximum channel temperature
Note 5:
on lower left of the marking indicates Pin 1.
(a)
FR-4
25.4 25.4 0.8
(unit:
mm)
(b)
FR-4
25.4 25.4 0.8
(unit:
mm)
Weekly code:
(Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
T P C 8 0 0 3
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
TPC8003
2004-07-06
3
Electrical Characteristics
(Ta = 25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V
, V
DS
= 0 V
-- -- 10 A
Drain cut-off current
I
DSS
V
DS
= 30 V
, V
GS
= 0 V
-- -- 10 A
V
(BR) DSS
I
D
= 10 mA
, V
GS
= 0 V
30 -- -- V
Drain-source breakdown voltage
V
(BR) DSX
I
D
= 10 mA
, V
GS
= -20 V
15 -- -- V
Gate threshold voltage
V
th
V
DS
= 10 V,
I
D
= 1 mA
0.8 -- 2.5 V
R
DS (ON)
V
GS
= 4 V,
I
D
= 6.5 A
-- 8.3 13 m
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V,
I
D
= 6.5 A
-- 5.4 7 m
Forward transfer admittance
|Y
fs
| V
DS
= 10 V,
I
D
= 6.5 A
10.5 21 -- S
Input capacitance
C
iss
--
4380
--
Reverse transfer capacitance
C
rss
-- 500 --
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
-- 890 --
pF
Rise time
tr
--
14
--
Turn-on time
t
on
--
27
--
Fall time
t
f
--
72
--
Switching time
Turn-off time
t
off
-- 235 --
ns
Total gate charge (Gate-source
plus gate-drain)
Q
g
--
90
--
Gate-source charge
Q
gs
--
60
--
Gate-drain ("miller") charge
Q
gd
V
DD
24 V, V
GS
= 10 V, I
D
= 13 A
-- 30 --
nC
Source-Drain Ratings and Characteristics
(Ta =
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse (Note 1)
I
DRP
-- --
--
52
A
Forward voltage (diode)
V
DSF
I
DR
= 13 A, V
GS
= 0 V
-- -- -1.2 V
TPC8003
2004-07-06
4
TPC8003
2004-07-06
5
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