TPC8009-H
2002-01-17
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII)
TPC8009-H
High Speed and High Efficiency DC-DC Converters
Notebook PC Applications
Portable Equipment Applications
Small footprint due to small and thin package
High speed switching
Small gate charge: Q
g
= 29 nC (typ.)
Low drain-source ON resistance: R
DS (ON)
= 8 m (typ.)
High forward transfer admittance: |Y
fs
| = 16 S (typ.)
Low leakage current: I
DSS
= 10 A (max) (V
DS
= 30 V)
Enhancement mode: V
th
= 1.1 to 2.3 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
30 V
Drain-gate voltage (R
GS
= 20 kW)
V
DGR
30 V
Gate-source voltage
V
GSS
20 V
DC (Note
1)
I
D
13
Drain current
Pulse (Note
1)
I
DP
52
A
Drain power dissipation
(t
= 10 s)
(Note
2a)
P
D
1.9
W
Drain power dissipation
(t
= 10 s)
(Note
2b)
P
D
1.0
W
Single pulse avalanche energy
(Note 3)
E
AS
219
mJ
Avalanche current
I
AR
13
A
Repetitive avalanche energy
(Note 2a) (Note 4)
E
AR
0.19
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55 to 150
C
Note: (Note 1), (Note 2), (Note 3), (Note 4) Please see next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8 6
1 2 3
7
5
4
TPC8009-H
2002-01-17
2
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2a)
R
th (ch-a)
65.8
C/W
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2b)
R
th (ch-a)
125
C/W
Marking
(Note 5)
Note 1: Please use devices on condition that the channel temperature is below 150C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: V
DD
= 24 V, T
ch
= 25C (initial), L = 1.0 mH, R
G
= 25 W, I
AR
= 13 A
Note 4: Repetitive rating; pulse width limited by max channel temperature.
Note 5:
on lower left of the marking indicates Pin 1.
shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
TYPE
TPC8009
H
(a)
FR-4
25.4
25.4 0.8
(Unit:
mm)
(b)
FR-4
25.4
25.4 0.8
(Unit:
mm)
TPC8009-H
2002-01-17
3
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
10
mA
Drain cut-OFF current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10 mA
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
30
Drain-source breakdown voltage
V
(BR) DSX
I
D
= 10 mA, V
GS
= -20 V
15
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
1.1
2.3 V
V
GS
= 4.5 V, I
D
= 6.5 A
11 15
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 6.5 A
8 10
m
W
Forward transfer admittance
|Y
fs
| V
DS
= 10 V, I
D
= 6.5 A
8 16
S
Input capacitance
C
iss
1460
Reverse transfer capacitance
C
rss
250
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
600
pF
Rise time
t
r
5
Turn-ON time
t
on
13
Fall time
t
f
12
Switching time
Turn-OFF time
t
off
Duty <= 1%, t
w
= 10 ms
37
ns
V
DD
~
- 24 V, V
GS
= 10 V, I
D
= 13 A
29
Total gate charge
(gate-source plus gate-drain)
Q
g
V
DD
~
- 24 V, V
GS
= 5 V, I
D
= 13 A
16
Gate-source charge 1
Q
gs1
4.2
Gate-drain ("miller") charge
Q
gd
7.3
Gate switch charge
Q
SW
V
DD
~
- 24 V, V
GS
= 10 V, I
D
= 13 A
9.1
nC
Source-Drain Ratings and Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
I
DRP
52 A
Forward voltage (diode)
V
DSF
I
DR
= 13 A, V
GS
= 0 V
-1.2
V
R
L
=
2.
3
W
V
DD
~
- 15 V
0 V
V
GS
10 V
4.
7
W
I
D
= 6.5 A
V
OUT
TPC8009-H
2002-01-17
4
Fo
rw
ar
d
t
r
a
n
sfe
r
ad
mi
ttanc
e |Y
fs
|
(S
)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
I
D
V
GS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
V
DS
V
GS
Drain current I
D
(A)
|Y
fs
| I
D
Drain current I
D
(A)
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS
(ON)
(m
9
)
R
DS (ON)
I
D
0.1 1 10 100
0
1
10
100
Ta
= -55C
25
100
Common source
VDS = 10 V
Pulse test
0
50
0
1
2 3
6
25
100
Ta
= -55C
10
20
30
40
Common source
VDS = 10 V
Pulse test
4 5
Common source
Ta
= 25C
Pulse test
ID = 13 A
6.5
3.5
0
2
6
8
12
16
10 14
4
0
0.1
0.3
0.5
0.6
1
0.8
0.2
0.4
0.9
0.7
0 0.2
0
0.4 0.6 0.8 1.0
2
4
6
8
10
Common source
Ta
= 25C Pulse test
VGS = 2.4 V
2.6
2.9
2.7
3
4
10
2.8
2.5
4
0.8
1.2 1.6 2.0
Common source
Ta
= 25C Pulse test
2.9
2.8
2.5
2.7
VGS = 2.5 V
3
10
3.1
0
8
12
16
20
4
0
0.4
1
10
100
0.1
1
10 100
Common source
Ta
= 25C
Pulse test
10
VGS = 4.5 V
TPC8009-H
2002-01-17
5
Ambient temperature Ta (C)
R
DS (ON)
Ta
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS
(ON)
(m
9
)
Drain-source voltage V
DS
(V)
I
DR
V
DS
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I
DR
(A
)
Drain-source voltage V
DS
(V)
Capacitance V
DS
C
apaci
t
anc
e C
(p
F)
Ambient temperature Ta (C)
V
th
Ta
Gate
th
res
hol
d vol
t
a
ge
V
th
(V
)
Ambient temperature Ta (C)
P
D
Ta
D
r
ai
n
po
w
e
r
di
ssi
p
a
ti
on
P
D
(W
)
Gate
-so
u
r
c
e
v
o
l
t
age
V
GS
(V
)
Total gate charge Q
g
(nC)
Dynamic Input/Output Characteristics
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
0.1 1 10 100
10
100
1000
10000
Crss
Coss
Ciss
Common source
VGS = 0 V
f
= 1 MHz
Ta
= 25C
0
1.5
2.5
-80
-40
0
40
80 160
120
0.5
2
1
Common source
VDS = 10 V
ID = 1 mA
Pulse test
-80
-40 0 40
80
160
120
ID = 136.53.5 A
10
VGS = 4.5 V
ID = 136.53.5 A
0
4
8
14
18
2
6
10
12
16
Common source
Pulse test
0.1
1
10
0
-0.4
-0.6
-0.8
-1
-0.2
100
3
1
5
10
Common source
Ta
= 25C
Pulse test
VGS = 0 V
0
0
0.4
0.8
1.2
1.6
2
50 100
150 200
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t
= 10 s
(1)
(2)
12
6
0
0
5
5
10
15
10
20
30
0
4
8
12
10
Common source Ta
= 25C
ID = 13 A Pulse test
VGS
20 25 30
15
25
6
2
VDS
VDD = 24 V
VDD = 24 V
6
12
TPC8009-H
2002-01-17
6
r
th
- t
w
Safe Operating Area
Pulse width t
w
(s)
Drain-source voltage V
DS
(V)
T
r
a
n
si
e
n
t t
h
e
r
m
a
l
i
m
pe
da
nce
r
th
(C
/
W
)
D
r
ai
n
cu
rre
nt
I
D
(A
)
0.01
0.01 0.1 1
10 100
0.1
1
10
100
*: Single pulse Ta
= 25C
Curves must be derated
linearly with increase in
temperature.
ID max (pulse)*
10 ms*
1 ms*
VDSS max
0.1
0.001 0.01 0.1
10
100
1000
1
100
1000
Single pulse
1
(2)
10
(1) Device mounted on a glass-epoxy board
(a) (Note 2a)
(2) Device mounted on a glass-epoxy board
(b) (Note 2b)
t
= 10 s
(1)
TPC8009-H
2002-01-17
7
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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