TPC8014
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPC8014
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 11 m (typ.)
High forward transfer admittance: |Y
fs
| = 10 S (typ.)
Low leakage current: I
DSS
= 10 A (max) (V
DS
= 30 V)
Enhancement mode: V
th
= 1.3 to 2.5 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta = 25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
30 V
Drain-gate voltage (R
GS
= 20 k)
V
DGR
30 V
Gate-source voltage
V
GSS
20 V
DC (Note
1)
I
D
11
Drain current
Pulse (Note
1)
I
DP
44
A
Drain power dissipation
(t
= 10 s)
(Note
2a)
P
D
1.9
W
Drain power dissipation
(t
= 10 s)
(Note
2b)
P
D
1.0
W
Single pulse avalanche energy
(Note 3)
E
AS
157
mJ
Avalanche current
I
AR
11
A
Repetitive avalanche energy
(Note 2a) (Note 4)
E
AR
0.19
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55 to 150
C
Note 1, Note 2, Note 3 and Note 4: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with
caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-6J1B
Weight: 0.08 g (typ.)
Circuit Configuration
8 6
1 2 3
7
5
4
TPC8014
2004-07-06
2
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2a)
R
th (ch-a)
65.8
C/W
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2b)
R
th (ch-a)
125
C/W
Marking
(Note 5)
Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: V
DD
= 24 V, T
ch
= 25C (initial), L = 1.0 mH, R
G
= 25 , I
AR
= 11 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5:
on lower left of the marking indicates Pin 1.
(a)
FR-4
25.4
25.4 0.8
(unit:
mm)
(b)
FR-4
25.4
25.4 0.8
(unit:
mm)
Weekly code:
(Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
T P C 8 0 1 4
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
TPC8014
2004-07-06
3
Electrical Characteristics
(Ta
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
10
A
Drain cut-OFF current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10 A
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
30
Drain-source breakdown voltage
V
(BR) DSX
I
D
= 10 mA, V
GS
= -20 V
15
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
1.3
2.5 V
V
GS
= 4.5 V, I
D
= 5.5 A
15 22
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 5.5 A
11 14
m
Forward transfer admittance
|Y
fs
| V
DS
= 10 V, I
D
= 5.5 A
5 10
S
Input capacitance
C
iss
1860
Reverse transfer capacitance
C
rss
270
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
320
pF
Rise time
t
r
9
Turn-ON time
t
on
19
Fall time
t
f
20
Switching time
Turn-OFF time
t
off
Duty <= 1%, t
w
= 10 s
69
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
39
Gate-source charge 1
Q
gs1
4
Gate-drain ("miller") charge
Q
gd
V
DD
- 24 V, V
GS
= 10 V, I
D
= 11 A
9
nC
Source-Drain Ratings and Characteristics
(Ta
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
I
DRP
44 A
Forward voltage (diode)
V
DSF
I
DR
= 11 A, V
GS
= 0 V
-1.2 V
R
L
=
2.
7
V
DD
- 15 V
0 V
V
GS
10 V
4.
7
I
D
= 5.5 A
V
OUT
TPC8014
2004-07-06
4
0
4
8
20
0
0.6
1
0.8
0.2
0.4
ID = 11A
5.5
2.5
Common source
Ta
= 25C
Pulse test
12 16
I
D
V
DS
Drain-source voltage VDS (V)
D
r
ain
cu
rre
nt
I D
(
A
)
3.5
4
6
8
10
0 1 2 3 4 5
0
4
8
12
16
20
VGS = 2.6 V
3.0
3.2
3.1
2.7
2.9
2.8
3.3
3.4
I
D
V
DS
Drain-source voltage VDS (V)
D
r
ain
cu
rre
nt
I D
(A)
3.4
0.4
0.6 0.8 1.0
0
4
6
8
10
2
0
0.2
VGS = 2.5 V
2.6
2.7
2.8
2.9
3.0
3.1
3.2
10
8
6
4
3.
3.3
I
D
V
GS
Gate-source voltage VGS (V)
D
r
ain
cu
rre
nt
I D
(
A
)
0
20
0
0.5
1 1.5
4
4
8
12
16
Common source
VDS = 10 V
Pulse test
2
3
25
100
Ta
= -55C
2.5 2.5
V
DS
V
GS
Dr
ai
n-
s
o
u
r
ce
vo
lt
ag
e
V
DS
(V
)
Gate-source voltage VGS (V)
|Y
fs
| I
D
F
o
r
w
ar
d t
r
a
n
sfe
r
ad
mittan
c
e
Y
fs
(S)
Drain current ID (A)
R
DS (ON)
I
D
Drain current ID (A)
D
r
ain
-
so
urc
e
O
N
r
e
sis
t
anc
e
R
DS (ON)
(m
)
1
3
30 100
Common source
Ta
= 25C
Pulse test
1
10
100
VGS = 10 V
VGE = 4.5 V
3
30
10
0.1 1 10 100
Common source
VDS = 10 V
Pulse test
Tc
= 100C
-55C
25C
TPC8014
2004-07-06
5
-80
-40 0 40 80
160
120
0
5
10
25
15
20
Common source
Pulse test
VGS = 4.5 V
ID = 11, 5.5, 2.5 A
10
ID = 11, 5.5, 2.5 A
R
DS (ON)
Ta (
)
Ambient temperature Ta (C)
D
r
ain
-
so
urc
e
O
N
r
e
si
stanc
e
R
DS (ON)
(
)
I
DR
V
DS
Drain-source voltage VDS (V)
Drain
re
v
e
r
s
e c
u
r
r
e
n
t
I DR
(
A
)
V
th
Ta
Ambient temperature Ta (C)
Gate
th
res
h
o
l
d vol
t
a
g
e
V
th
(V
)
Capacitance V
DS
Drain-source voltage VDS (V)
C
apaci
t
anc
e
C
(p
F)
P
D
Ta
Drain
po
w
e
r
diss
i
p
a
t
ion
P
D
(W
)
Ambient temperature Ta (C)
0
0
0.4
0.8
1.2
1.6
2
50 100 150 200
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t
= 10 s
(1)
(2)
Dynamic input/output characteristics
Drai
n
-
s
o
urc
e
v
o
l
t
a
ge V
DS
(V)
G
a
t
e
-
s
our
ce
vo
l
t
a
g
e
V
GS
(
V
)
Total gate charge Qg (nC)
0.1 1 10 100
10
100
1000
10000
Crss
Coss
Ciss
Common source
VGS = 10 V
ID = 1 mA
Pulse test
0.1
1
10
0
0.4
0.6
0.8 1.2
0.2
100
1
Common source
Ta
= 25C
Pulse test
3
1
5
10
VGS = 10 V
-80
-40
0
40
80 120
0
1
3
2
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0.5
1.5
2.5
0
15
10
20
30
5
25
0
10
20
30
Common source
Ta
= 25C
ID = 11 A
Pulse test
VDS
VDD = 24 V
40 50 60
12
6
VDD = 24 V
6
12
0
15
10
20
30
5
25
PDF 
ZIP