TPC8204
2003-02-18
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TPC8204
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
l Small footprint due to small and thin package
l Low drain-source ON resistance : R
DS
(ON)
= 16 m (typ.)
l High forward transfer admittance : |Y
fs
| = 18 S (typ.)
l Low leakage current
: I
DSS
= 10 A (max) (V
DS
= 20 V)
l Enhancement-mode :
V
th
= 0.5~1.2 V (V
DS
= 10 V, I
D
= 200 A)
Maximum Ratings
(Ta = 25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
20 V
Drain-gate voltage (R
GS
= 20k) V
DGR
20 V
Gate-source voltage
V
GSS
12 V
D C
(Note 1)
I
D
6
Drain curren
Pulse I
DP
24
A
Single-device
operation
(Note
3a)
P
D (1)
1.5
Drain power
dissipation
(t = 10s)
(Note
2a)
Single-device value
at dual operation
(Note 3b)
P
D(2)
1.1
W
Single-device
operation
(Note
3a)
P
D (1)
0.75
Drain power
dissipation
(t = 10s)
(Note
2b)
Single-device value
at dual operation
(Note 3b)
P
D (2)
0.45
W
Single pulse avalanche energy
(Note
4)
E
AS
46.8 mJ
Avalanche current
(Note 1)
I
AR
6 A
Repetitive avalanche energy
Single-device value at operation
(Note 2a, Note 3b, Note 5)
E
AR
0.1 mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150 C
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
TPC8204
2003-02-18
2
Thermal Characteristics
Characteristics Symbol
Max
Unit
Single-device operation
(Note 3a)
R
th (ch-a) (1)
83.3
Thermal resistance, channel to ambient
(t = 10s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
114
Single-device operation
(Note 3a)
R
th (ch-a) (1)
167
Thermal resistance, channel to ambient
(t = 10s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
278
C/W
Marking
(Note 6)
Note 1: Please use devices on condition that the channel temperature is below 150C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4: V
DD
= 16 V, T
ch
= 25C (initial), L = 1.0 mH, R
G
= 25 , I
AR
= 6 A
Note 5: Repetitive rating; pulse width limited by maximum channel temperature.
Note 6: on lower right of the marking indicates Pin 1.
Type
TPC8204
FR-4
25.4 25.4 0.8
(Unit: mm)
(a)
FR-4
25.4 25.4 0.8
(Unit: mm)
(b)
Lot No.
Weekly code:(Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
TPC8204
2003-02-18
3
Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 10 V, V
DS
= 0 V
-- -- 10
A
Drain cut-off current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
-- -- 10 A
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
20 -- -- V
Drain-source breakdown voltage
V
(BR) DSX
I
D
= 10 mA, V
GS
= -12 V
15 -- --
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 200 A
0.5 -- 1.2 V
R
DS (ON)
V
GS
= 2 V, I
D
= 3 A
-- 22 45
R
DS (ON)
V
GS
= 2.5 V, I
D
= 3A
-- 19 30
Drain-source ON resistance
R
DS (ON)
V
GS
= 4 V, I
D
= 3 A
-- 16 20
m
Forward transfer admittance
|Y
fs
| V
DS
= 10 V, I
D
= 3 A
8.5 17 -- S
Input capacitance
C
iss
--
2740
--
Reverse transfer capacitance
C
rss
-- 520 --
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
-- 600 --
pF
Rise time
t
r
-- 3 --
Turn-on time
t
on
--
12
--
Fall time
t
f
--
21
--
Switching time
Turn-off time
t
off
-- 102 --
ns
Total gate charge (gate-source
plus gate-drain)
Q
g
--
31
--
Gate-source charge
Q
gs
--
24
--
Gate-drain ("miller") charge
Q
gd
V
DD
16 V, V
GS
= 5 V, I
D
= 6 A
-- 7 --
nC
Source-Drain Ratings and Characteristics
(Ta =
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse (Note 1)
I
DRP
-- --
--
24
A
Forward voltage (diode)
V
DSF
I
DR
= 6 A, V
GS
= 0 V
-- -- -1.2
V
TPC8204
2003-02-18
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TPC8204
2003-02-18
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TPC8204
2003-02-18
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TPC8204
2003-02-18
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
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set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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