TPCS8205
2003-02-20
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
TPCS8205
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
l Small footprint due to small and thin package
l Low drain-source ON resistance: R
DS (ON)
= 30 m (typ.)
l High forward transfer admittance: |Y
fs
| = 10 S (typ.)
l Low leakage current: I
DSS
= 10 A (max) (V
DS
= 20 V)
l Enhancement-mode: V
th
= 0.5~1.2 V (V
DS
= 10 V, I
D
= 200 A)
Maximum Ratings
(Ta = 25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
20 V
Drain-gate voltage (R
GS
= 20k) V
DGR
20 V
Gate-source voltage
V
GSS
12 V
D C
(Note 1)
I
D
5
Drain curren
Pulse (Note
1) I
DP
20
A
Single-device
operation
(Note
3a)
P
D (1)
1.1
Drain power
dissipation
(t = 10s)
(Note
2a)
Single-device value
at dual operation
(Note 3b)
P
D(2)
0.5
W
Single-device
operation
(Note
3a)
P
D (1)
0.6
Drain power
dissipation
(t = 10s)
(Note
2b)
Single-device value
at dual operation
(Note 3b)
P
D (2)
0.35
W
Single pulse avalanche energy
(Note
4)
E
AS
32.5 mJ
Avalanche current
I
AR
5 A
Repetitive avalanche energy
Single-device value at operation
(Note 2a, Note 3b, Note 5)
E
AR
0.05 mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150 C
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)
and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-3R1E
Weight: 0.035 g (typ.)
Circuit Configuration
TPCS8205
2003-02-20
2
Thermal Characteristics
Characteristics Symbol
Max
Unit
Single-device operation
(Note 3a)
R
th (ch-a) (1)
114
Thermal resistance, channel to ambient
(t = 10s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
250
Single-device operation
(Note 3a)
R
th (ch-a) (1)
208
Thermal resistance, channel to ambient
(t = 10s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
357
C/W
Marking
(Note 6)
Note 1: Please use devices on condition that the channel temperature is below 150C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.)
Note 4: V
DD
= 16 V, T
ch
= 25C (Initiaal), L = 1.0 mH, R
G
= 25 , I
AR
= 5.0 A
Note 5: Repetitive rating: pulse width limited by max channel temperature
Note 6: on lower right of the marking indicates Pin 1.
Type
S8205
FR-4
25.4 25.4 0.8
(unit: mm)
FR-4
25.4 25.4 0.8
(unit: mm)
Lot No.
Weekly code:
(Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
TPCS8205
2003-02-20
3
Electrical Characteristics
(Ta = 25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 10 V, V
DS
= 0 V
10
A
Drain cut-OFF current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10 A
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
20
Drain-source breakdown voltage
V
(BR) DSX
I
D
= 10 mA, V
GS
= -12 V
8
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 200 A
0.5
1.2 V
R
DS (ON
)
V
GS
= 2.0 V, I
D
= 3.5 A
60 90
R
DS (ON)
V
GS
= 2.5 V, I
D
= 3.5 A
40 60
Drain-source ON resistance
R
DS (ON)
V
GS
= 4 V, I
D
= 4 A
30 45
m
Forward transfer admittance
|Y
fs
| V
DS
= 10 V, I
D
= 2.5 A
5
10
S
Input capacitance
C
iss
760 pF
Reverse transfer capacitance
C
rss
110 pF
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
130 pF
Rise time
t
r
7
Turn-ON time
t
on
13
Fall time
t
f
13
Switching time
Turn-OFF time
t
off
49
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
11 nC
Gate-source charge
Q
gs
8 nC
Gate-drain ("miller") charge
Q
gd
V
DD
16 V, V
GS
= 5 V, I
D
= 5 A
3 nC
Source-Drain Ratings and Characteristics
(Ta = 25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse (Note 1)
I
DRP
-- --
--
20
A
Forward voltage (diode)
V
DSF
I
DR
= 5 A, V
GS
= 0 V
-- -- -1.2
V
TPCS8205
2003-02-20
4
TPCS8205
2003-02-20
5
AMBIENT TEMPERATURE Ta (
C)
P
D
Ta
D
R
AIN
PO
W
E
R
D
I
SSI
P
A
TIO
N
P
D
(
W
)
0
0
0.4
0.8
1.2
1.6
2
40
80
200
160
120
(1)
(2)
(3)
(4)
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a)
(NOTE
2a)
(1) SINGLE-DEVICE OPERATION
(NOTE 3a)
(2) SINGLE-DEVICE VALUE AT DUAL OPERATION
(NOTE 3b)
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b)
(NOTE
2b)
(3) SINGLE-DEVICE OPERATION
(NOTE 3a)
(4) SINGLE-DEVICE VALUE AT DUAL OPERATION
(NOTE
3b)
t
= 10 s
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