TPC8206
2003-02-18
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TPC8206
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 40 m (typ.)
High forward transfer admittance: |Y
fs
| = 7.0 S (typ.)
Low leakage current: I
DSS
= 10 A (max) (V
DS
= 60 V)
Enhancement-mode: V
th
= 1.3 to 2.5 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
60 V
Drain-gate voltage (R
GS
= 20 kW) V
DGR
60 V
Gate-source voltage
V
GSS
20 V
DC (Note
1)
I
D
5
Drain current
Pulse (Note
1) I
DP
20
A
Single-device
operation (Note
3a)
P
D (1)
1.5
Drain power
dissipation
(t
= 10 s)
(Note 2a)
Single-device value
at dual operation
(Note
3b)
P
D (2)
1.0
W
Single-device
operation (Note
3a)
P
D (1)
0.75
Drain power
dissipation
(t
= 10 s)
(Note 2b)
Single-device value
at dual operation
(Note
3b)
P
D (2)
0.45
W
Single pulse avalanche energy
(Note
4)
E
AS
92
mJ
Avalanche current
I
AR
5
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
E
AR
0.1
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55 to 150
C
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
8 7 6 5
1 2 3 4
TPC8206
2003-02-18
2
Thermal Characteristics
Characteristics Symbol
Max
Unit
Single-device operation
(Note 3a)
R
th (ch-a) (1)
83.3
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
125
C/W
Single-device operation
(Note 3a)
R
th (ch-a) (1)
167
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
278
C/W
Marking
(Note 6)
Note 1: Please use devices on condition that the channel temperature is below 150C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b) Device mounted on a glass-epoxy board (b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device.
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device.
(During dual operation, power is evenly applied to both devices.)
Note 4: V
DD
= 25 V, T
ch
= 25C (initial), L = 5.0 mH, R
G
= 25 W, I
AR
= 5 A
Note 5: Repetitive rating; pulse width limited by maximum channel temperature
Note 6:
on lower left of the marking indicates Pin 1.
Type
TPC8206
FR-4
25.4
25.4 0.8
(unit: mm)
(a)
FR-4
25.4
25.4 0.8
(unit: mm)
(b)
Lot No.
Weekly code:
(Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
TPC8206
2003-02-18
3
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
10
mA
Drain cut-OFF current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
10 mA
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
60
Drain-source breakdown voltage
V
(BR) DSX
I
D
= 10 mA, V
GS
= -12 V
35
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
1.3
2.5 V
V
GS
= 4 V, I
D
= 2.5 A
55 75
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 2.5 A
40 50
m
W
Forward transfer admittance
|Y
fs
| V
DS
= 10 V, I
D
= 2.5 A
3.5 7.0
S
Input capacitance
C
iss
800
Reverse transfer capacitance
C
rss
60
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
190
pF
Rise time
t
r
2.6
Turn-ON time
t
on
10
Fall time
t
f
2.3
Switching time
Turn-OFF time
t
off
Duty <= 1%, t
w
= 10 ms
22
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
17
Gate-source charge
Q
gs
12
Gate-drain ("miller") charge
Q
gd
V
DD
~
- 48 V, V
GS
= 10 V, I
D
= 5 A
5
nC
Source-Drain Ratings and Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
I
DRP
20 A
Forward voltage (diode)
V
DSF
I
DR
= 5 A, V
GS
= 0 V
-1.2
V
R
L
=
12
W
V
DD
~
- 30 V
0 V
V
GS
10 V
4.
7
W
I
D
= 2.5 A
V
OUT
TPC8206
2003-02-18
4
I
D
V
DS
I
D
V
DS
I
D
V
GS
V
DS
V
GS
|Y
fs
| I
D
R
DS (ON)
I
D
Fo
rw
ar
d t
r
a
n
sfe
r
ad
mi
ttanc
e
Y
fs
(
S
)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Drain-source voltage V
DS
(V)
D
r
ai
n
cu
rre
nt
I
D
(A
)
Drain-source voltage V
DS
(V)
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
Drain current I
D
(A)
Drain current I
D
(A)
D
r
ai
n
-
so
urc
e
O
N
r
e
si
stanc
e
R
DS (
O
N)
(
m
W
)
VGS = 2.5 V
0 0.2 0.4 0.6
Common source
Ta
= 25C
Pulse test
2.75
0.8 1
0
2
4
6
8
10
3.0
3.25
5
4
6
10
8
3.5
3.75
0
4
8
12
16
20
0
1
2
3
4
5
VGS = 2.5 V
10
8
4
Common source
Ta
= 25C
Pulse test
3.0
2.75
3.25
3.5
5
3.75
6
0
0 1 2 3 4 5
4
8
12
16
20
Common source
VDS = 10 V
Pulse test
Ta
= -55C
100
25
0
0 2 4 6 8 10
0.1
0.2
0.3
0.4
0.5
0.6
12
Common source
Ta
= 25C
Pulse test
ID = 5 A
2.5
1.3
0.1 0.3 1 3 10 30
3
10
30
100
300
500
50
5
Common source
Ta
= 25C
Pulse test
VGS = 4 V
10
0.1 0.3 1 3 10 30
0.3
1
3
10
30
50
5
0.5
Common source
VDS = 10 V
Pulse test
100
25
Ta
= -55C
TPC8206
2003-02-18
5
R
DS (ON)
Ta
I
DR
V
DS
Capacitance V
DS
V
th
Ta
P
D
Ta
Dynamic input/output characteristics
D
r
ai
n
po
w
e
r
di
ssi
p
a
ti
on
P
D
(W
)
Gate
th
res
hol
d vol
t
a
ge
V
th
(
V
)
Ambient temperature Ta (C)
D
r
ai
n
-
so
urc
e
O
N
r
e
si
stanc
e
R
DS (ON)
(m
W
)
Drain-source voltage V
DS
(V)
Drain-source voltage V
DS
(V)
C
apaci
t
anc
e C
(p
F)
Ambient temperature Ta (C)
Ambient temperature Ta (C)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Gate
-so
u
r
c
e
v
o
l
t
age
V
GS
(V
)
Total gate charge Q
g
(nC)
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I
DR
(
A
)
0
-80
-40 0 40 80 120
20
40
60
80
100
120
160
Common source
Pulse test
VGS = 4 V
10
ID = 5 A
2.5
1.3
ID = 5 A
2.5
1.3
-0.4
0
-0.8
-1.2
-1.6
0.1
1
10
100
Common source
Ta
= 25C
Pulse test
VGS = 0, -1 V
5
1
10
3
10
0.1
1
10
100
100
1000
5000
Coss
3000
300
500
30
50 Common source
VGS = 0 V
Tc
= 25C
f
= 1 MHz
Ciss
Crss
3
0
-80
-40 0 40
120
160
80
1
2
4
5
Common source
VDS = 10 V
ID = 1 mA
Pulse test
(2)
0 50 100 150 200
0
0.4
1.2
1.6
2.0
0.8
(4)
Device mounted on a glass-epoxy board (a)
(Note
2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation
(Note 3b)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t
= 10 s
(1)
(3)
30
0
0 5 10 15
25
30
20
10
20
40
50
Common source
ID = 5 A
Ta
= 25C
Pulse test
VGS
VDD = 48 V
VDS
12
24
12
24
VDD = 48 V
15
5
10
20
25
0
TPC8206
2003-02-18
6
Drain-source voltage V
DS
(V)
D
r
ai
n
cu
rre
nt
I
D
(A
)
Safe operating area
Pulse width t
w
(S)
r
th
- t
w
Norm
al
i
z
ed t
r
ans
i
e
n
t
t
herm
a
l
i
m
pe
danc
e
r
th
(
C
/
W
)
0.1
0.1
1
0.3
10
3
100
30
0.3 1 3 10 30 100
* Single
pulse
Ta
= 25C
Curves must be derated
linearly with increase in
temperature.
ID max (pulse) *
10 ms *
1 ms *
VDSS max
Single-device value at dual
operation (Note
3b)
0.1
0.001 0.01 0.1
1
10 100 1000
1
10
100
1000
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
t
= 10 s
(4)
(3)
(2)
(1)
Single pulse
TPC8206
2003-02-18
7
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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