TPC8401
2002-05-17
1
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII)
TPC8401
Lithium Ion Secondary Battery Applications
Portable Equipment Applications
Notebook PCs
Low drain-source ON resistance
: P Channel R
DS
(ON)
= 27 m (typ.)
N Channel R
DS
(ON)
= 14 m (typ.)
High forward transfer admittance
: P Channel |Y
fs
| = 7 S (typ.)
N Channel |Y
fs
| = 8 S (typ.)
Low leakage current
: P Channel I
DSS
= -10 A (V
DS
= -30 V)
N
Channel
I
DSS
= 10 A (V
DS
= 30 V)
Enhancement-mode
: P Channel V
th
= -0.8~ -2.0 V (V
DS
= -10 V, I
D
= -1mA)
N Channel V
th
= 0.8~2.5 V (V
DS
= 10 V, I
D
= 1mA)
Maximum Ratings
(Ta = 25C)
Rating
Characteristics Symbol
P Channel N Channel
Unit
Drain-source voltage
V
DSS
-30 30 V
Drain-gate voltage (R
GS
=
20 k
) V
DGR
-30 30 V
Gate-source voltage
V
GSS
20
20 V
DC (Note
1)
I
D
-4.5 6
Drain current
Pulse (Note
1)
I
DP
-18 24
A
Single-device operation
(Note
3a)
P
D (1)
1.5
1.5
Drain power
dissipation
(t = 10s)
(Note 2a)
Single-device value at
dual operation
(Note 3b)
P
D (2)
1.0
1.0
Single-device operation
(Note
3a)
P
D (1)
0.75 0.75
Drain power
dissipation
(t = 10s)
(Note 2b)
Single-device value at
dual operation
(Note 3b)
P
D (2)
0.45 0.45
W
Single pulse avalanche energy
E
AS
26.3
(Note 4a)
46.8
(Note 4b)
mJ
Avalanche current
I
AR
-4.5 6 A
Repetitive avalanche energy
Single-device value at operation
(Note 2a, 3b, 5)
E
AR
0.10 mJ
Channel temperature
T
ch
150 C
Storage temperature range
T
stg
-55~150 C
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
TPC8401
2002-05-17
2
Thermal Characteristics
Characteristics Symbol
Max
Unit
Single-device operation
(Note 3a)
R
th (ch-a) (1)
83.3
Thermal resistance, channel to ambient
(t = 10s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
125
Single-device operation
(Note 3a)
R
th (ch-a) (1)
167
Thermal resistance, channel to ambient
(t = 10s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
278
C/W
Marking
Note 1: Please use devices on condition that the channel temperature is below 150C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b) Device mounted on a glass-epoxy board (b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.)
Note 4:
a) V
DD
= -24 V, T
ch
= 25C (Initial), L = 1.0 mH, R
G
= 25 , I
AR
= -4.5 A
b) V
DD
= 24 V, T
ch
= 25C (Initial), L = 1.0 mH, R
G
= 25 , I
AR
= 6.0 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6:
on lower left of the marking indicates Pin 1.
* shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
*
Type
TPC8401
FR-4
25.4 25.4 0.8
(unit: mm)
(a)
FR-4
25.4 25.4 0.8
(unit: mm)
(b)
TPC8401
2002-05-17
3
P-ch
Electrical Characteristics
(Ta = 25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
-- -- 10 A
Drain cut-OFF current
I
DSS
V
DS
= -30 V, V
GS
= 0 V
-- -- -10 A
V
(BR) DSS
I
D
= -10 mA,
V
GS
= 0 V
-30 -- --
Drain-source breakdown
voltage
V
(BR) DSX
I
D
= -10 mA,
V
GS
= 20 V
-15 -- --
V
Gate threshold voltage
V
th
V
DS
= -10 V, I
D
= -1 mA
-0.8 -- -2.0 V
R
DS (ON)
V
GS
= -4 V, I
D
= -2.2 A
-- 51 65
Drain-source ON resistance
R
DS (ON)
V
GS
= -10 V, I
D
= -2.2 A
-- 25 35
m
Forward transfer admittance
|Y
fs
| V
DS
= -10 V, I
D
= -2.2 A
3.5 7 -- S
Input capacitance
C
iss
-- 970 --
Reverse transfer capacitance
C
rss
-- 180 --
Output capacitance
C
oss
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
-- 370 --
pF
Rise time
t
r
--
17
--
Turn-ON time
t
on
--
20
--
Fall time
t
f
--
75
--
Switching time
Turn-OFF time
t
off
-- 160 --
ns
Total gate charge (Gate-source
plus gate-drain)
Q
g
--
28
--
Gate-source charge 1
Q
gs1
-- 6 --
Gate-drain ("miller") charge
Q
gd
V
DD
-24 V, V
GS
= -10 V, I
D
= -4.5 A
-- 12 --
nC
Source-Drain Ratings and Characteristics
(Ta =
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse (Note 1)
I
DRP
-- --
--
-18 A
Forward voltage (diode)
V
DSF
I
DR
= -4.5 A, V
GS
= 0 V
-- -- 1.2 V
TPC8401
2002-05-17
4
N-ch
Electrical Characteristics
(Ta = 25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
10 A
Drain cut-OFF current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10 A
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
30
Drain-source breakdown
voltage
V
(BR) DSX
I
D
= 10 mA, V
GS
= -20 V
15
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
0.8
2.5 V
R
DS (ON)
V
GS
= 4 V, I
D
= 3 A
21 32
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 3 A
14 21
m
Forward transfer admittance
|Y
fs
| V
DS
= 10 V, I
D
= 3 A
4 8 S
Input capacitance
C
iss
1700
Reverse transfer capacitance
C
rss
260
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
380
pF
Rise time
t
r
10
Turn-ON time
t
on
20
Fall time
t
f
35
Switching time
Turn-OFF time
t
off
120
ns
Total gate charge (Gate-source
plus gate-drain)
Q
g
40
Gate-source charge 1
Q
gs1
28
Gate-drain ("miller") charge
Q
gd
V
DD
24 V, V
GS
= 10 V, I
D
= 6 A
12
nC
Source-Drain Ratings and Characteristics
(Ta =
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse (Note 1)
I
DRP
-- --
--
24
A
Forward voltage (diode)
V
DSF
I
DR
= 6 A, V
GS
= 0 V
-- -- -1.2 V
TPC8401
2002-05-17
5
P-ch
D
R
AIN
PO
W
E
R
D
I
SSI
P
A
T
IO
N
P
D
(
W
)
AMBIENT TEMPERATURE Ta (
C)
P
D
Ta
(1)
(2)
0
0 50
100
150
200
0.5
1.0
1.5
2.0
(4)
(3)
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a)
(NOTE 2a)
(1) SINGLE-DEVICE OPERATION (NOTE 3a)
(2) SINGLE-DEVICE VALUE AT DUAL OPERATION
(NOTE 3b)
DEVICE MOUNTED ON A GLASS-EPOXY
BOARD (b)
(NOTE 2b)
(3) SINGLE-DEVICE OPERATION
(NOTE
3a)
(4) SINGLE-DEVICE VALUE AT DUAL
OPERATION
(NOTE 3b)
t
=
10 s
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