TPCS8208
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8208
Lithium Ion Battery Applications
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 13 m (typ.)
High forward transfer admittance: |Y
fs
| = 15 S (typ.)
Low leakage current: I
DSS
= 10 A (max) (V
DS
= 20 V)
Enhancement mode: V
th
= 0.5~1.2 V (V
DS
= 10 V, I
D
= 200 A)
Common drain
Maximum Ratings
(Ta
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
20 V
Drain-gate voltage (R
GS
= 20 k) V
DGR
20 V
Gate-source voltage
V
GSS
12 V
DC (Note
1)
I
D
6
Drain current
Pulse (Note
1) I
DP
24
A
Single-device
operation (Note
3a)
P
D (1)
1.1
Drain power
dissipation
(t
= 10 s)
(Note 2a)
Single-device value
at dual operation
(Note
3b)
P
D (2)
0.75
W
Single-device
operation (Note
3a)
P
D (1)
0.6
Drain power
dissipation
(t
= 10 s)
(Note 2b)
Single-device value
at dual operation
(Note
3b)
P
D (2)
0.35
W
Single pulse avalanche energy
(Note
4)
E
AS
46.8
mJ
Avalanche current
I
AR
6 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
E
AR
0.075
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150 C
Note 1, Note 2, Note 3, Note 4, Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-3R1E
Weight: 0.035 g (typ.)
Circuit Configuration
8 7 6 5
1 2 3 4
TPCS8208
2004-07-06
2
Thermal Characteristics
Characteristics Symbol
Max
Unit
Single-device operation
(Note 3a)
R
th (ch-a) (1)
114
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
167
C/W
Single-device operation
(Note 3a)
R
th (ch-a) (1)
208
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
357
C/W
Marking
(Note 6)
Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b) Device mounted on a glass-epoxy board (b)
(a)
(b)
Note 3:
a)
The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.)
b)
The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.)
Note 4: V
DD
= 16 V, T
ch
= 25C (initial), L = 1.0 mH, R
G
= 25 , I
AR
= 6 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: on lower right of the marking indicates Pin 1.
S8208
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
FR-4
25.4
25.4 0.8
(unit: mm)
FR-4
25.4
25.4 0.8
(unit: mm)
Weekly code:
(Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
TPCS8208
2004-07-06
3
Electrical Characteristics
(Ta
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 10 V, V
DS
= 0 V
10
A
Drain cut-OFF current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10 A
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
20
Drain-source breakdown voltage
V
(BR) DSX
I
D
= 10 mA, V
GS
= -12 V
8
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 200 A 0.5
1.2 V
V
GS
= 2.0 V, I
D
= 4.2 A
24 35
V
GS
= 2.5 V, I
D
= 4.2 A
18 22
Drain-source ON resistance
R
DS (ON)
V
GS
= 4.0 V, I
D
= 4.8 A
13 17
m
Forward transfer admittance
|Y
fs
| V
DS
= 10 V, I
D
= 3.0 A
7.5 15
S
Input capacitance
C
iss
2160
Reverse transfer capacitance
C
rss
210
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
230
pF
Rise time
t
r
5
Turn-ON time
t
on
13
Fall time
t
f
10
Switching time
Turn-OFF time
t
off
Duty <= 1%, t
w
= 10 s
53
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
22
Gate-source charge 1
Q
gs1
4
Gate-drain ("miller") charge
Q
gd
V
DD
- 16 V, V
GS
= 5 V, I
D
= 6 A
5
nC
Source-Drain Ratings and Characteristics
(Ta
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
I
DRP
24 A
Forward voltage (diode)
V
DSF
I
DR
= 6 A, V
GS
= 0 V
-1.2 V
R
L
=
3.
3
V
DD
- 10 V
0 V
V
GS
5 V
4.
7
I
D
= 3 A
V
OUT
TPCS8208
2004-07-06
4
I
D
V
DS
I
D
V
DS
I
D
V
GS
V
DS
V
GS
|Y
fs
| I
D
R
DS (ON)
I
D
F
o
r
w
ar
d t
r
a
n
sfe
r
ad
mittan
c
e
Y
fs
(S)
D
r
a
i
n-
sou
r
ce
vo
l
t
age
V
DS
(V)
Drain-source voltage VDS (V)
Di
Drain-source voltage VDS (V)
D
r
ain
cu
rre
nt
I D
(
A
)
Gate-source voltage VGS (V)
D
r
ain
cu
rre
nt
I D
(
A
)
Gate-source voltage VGS (V)
Drain current ID (A)
Drain current ID (A)
D
r
ain
-
so
urc
e
O
N
r
e
sis
t
anc
e
R
DS (
O
N
)
(
m
)
0
Common source
Ta
= 25C
Pulse test
0
2
4
6
8
10
0.2
0.4
0.8
3
6
ID = 1.5 A
12
0.6
0
Common source
Ta
= 25C, Pulse test
VGS = 1.2 V
1.3
1.4
1.5
2
4, 5
0 0.4 0.8 1.2 1.6 2.0
1
2
3
4
5
0
Common source
Ta
= 25C
Pulse test
VGS = 1.2 V
1.3
1.4
1.5
2
4, 5
0
1
2
3
4
5
2
4
6
8
10
1.7
1.6
0
Common source
VDS = 10 V
Pulse test
0 1 2 3 4 5
2
4
6
8
10
Ta
= -55C
100
25
1
Common source
VDS = 10 V
Pulse test
0.1
1
10
10
100
Ta
= -55C
25
100
1
Common source
Ta
= 25C
Pulse test
0.1
1
10
10
100
VGS = 2 V
2.5
4
TPCS8208
2004-07-06
5
R
DS (ON)
Ta
I
DR
V
DS
Capacitance V
DS
V
th
Ta
P
D
Ta
Dynamic input/output characteristics
Drain
po
w
e
r
diss
i
p
a
t
ion
P
D
(W
)
Gate
th
res
hol
d vol
t
a
g
e
V
th
(
V
)
Ambient temperature Ta (C)
D
r
ain
-
so
urc
e
O
N
r
e
si
stanc
e
R
DS
(
O
N)
(m
)
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
C
apacit
anc
e
C
(p
F)
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Drai
n
-
s
o
urc
e
v
o
l
t
a
ge V
DS
(V)
G
a
t
e
-
s
our
ce
vo
l
t
a
g
e
V
GS
(
V
)
Total gate charge Qg (nC)
Drain
re
v
e
r
s
e c
u
r
r
e
n
t
I DR
(
A
)
Common source
Ta
= 25C
VGS = 0 V
f
= 1 MHz
0.1
100
1000
10000
1 10
Ciss
Coss
Crss
100
10
0
Common source
Pulse test
-80
-40 0
5
10
15
20
25
30
35
40
40 80 120
160
2.5
4
ID = 1.5, 3, 6 A
VGS = 2 V
0
Common source
VDS = 10 V
ID = 200 A
Pulse test
-80
-40
0
40
80 160
1.6
1.8
2.0
1.0
1.2
1.4
0.4
0.6
0.8
0.2
120
1
Common source
Ta
= 25C
Pulse test
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
3
10
VGS = -1 V
1
0
10, 5, 3
4
Common source
ID = 6 A
Ta
= 25C, Pulse test
0
8
24 32
16
0
2
4
6
8
10
VDD = 16 V
VDS
0
4
8
12
16
20
8
4
8
VDD = 16 V
VGS
0
0.2
0.4
0.6
0.8
1
1.2
0
50
100
200
150
(1)
(4)
(3)
(2)
Device mounted on a glass-epoxy
board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation
(Note 3b)
Device mounted on a glass-epoxy
board (b)
(Note 2b)
(3) Single-device operation
(Note
3a)
(4) Single-device value at dual
operation
(Note 3b)
t
= 10 s
TPCS8208
2004-07-06
6
Drain-source voltage VDS (V)
D
r
ain
cu
rre
nt
I D
(
A
)
Safe operating area
Pulse width tw (S)
r
th
- t
w
N
o
rm
aliz
ed
t
r
an
s
i
en
t
t
h
erm
a
l
im
peda
nc
e
r
th
(
C
/
W
)
0.001 0.01 0.1
1
10
100
1000
(1)
(2)
(3)
(4)
0.1
1
0.3
0.5
3
5
10
30
50
100
300
1000
500
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
Single pulse
0.01 0.03 0.1 0.3
1
3
10
100
30
0.01
0.03
0.05
0.1
0.3
0.5
1
3
5
10
30
100
50
* Single
pulse
Ta
= 25C
Curves must be derated linearly
with increase in temperature.
VDSS max
ID max (pulse) *
10 ms *
1 ms *
Single-device value at dual
operation (Note
3b)
TPCS8208
2004-07-06
7
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
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