ChipFind - документация

Электронный компонент: MIE-814A2

Скачать:  PDF   ZIP
AlGaAs/GaAs T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
MIE-814A2
Description
Package Dimensions
The MIE-814A2 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
Features
l
High radiant power and high radiant intesity
l
Suitable for DC and high pulse current operation
l
Peak wavelength
P
=940 nm
l
Good spectral matching to Si-Photodetector
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Maximum Rating
Unit
Power Dissipation
150
mW
Peak Forward Current
1
A
Continuous Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
02/04/2002
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unity Opto Technology Co., Ltd.
NOTES :
1. Tolerance is 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Unit: mm ( inches )
2.54NOM.
(.100)
A
C
2.00- 0.50
(.079) (.020)
6.700.20
(.264.008)
5.000.20
(.197.008)
1.30 max
(.051)
28 typ
(1.102)
2.00
1.00
(.079.039)
MIE-814A2
Optical-Electrical Characteristics
@ T
A
=25
o
C
Parameter
Test Conditions
Symbol
Min.
Typ .
Max.
Unit
Radiant Intensity
I
F
=20mA
Ie
1
2
mW/sr
Forward Voltage
I
F
=50mA
V
F
1.32
1.45
V
Reverse Current
V
R
=5V
I
R
100
A
Peak Wavelength
I
F
=20mA
940
nm
Spectral Bandwidth
I
F
=20mA
50
nm
View Angle
I
F
=20mA
2
1/2
50
deg .
Typical Optical-Electrical Characteristic Curves
02/04/2002
Unity Opto Technology Co., Ltd.
0
20
40
60
80
100
0
1.2
1.6
2.0
2.4
2.8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-40
-20
0
20
40
60
-55 -25
0
25
50
75 100 125
Relative Radiant Intensity
1.0
0.9
0.8
0.5 0.3 0.1 0.2 0.4 0.6
0 10 20
0
1
2
3
4
5
0
20
40
60
80
100
0
0.5
1
840
940
1040
Wavelength (nm)
FIG.1 SPECTRAL DISTRIBUTION
Relative Radiant Intensity
Ambient Temperature T
A
(
o
C)
FIG.2 FORWARD CURRENT VS.
AMBIENT TEMPERATURE
Output Power To Value I
F
=20mA
Forward Current I
F
(mA)
100
0
50
60
70
80
90
Forward Current (mA)
Forward Voltage (V)
FIG.3 FORWARD CURRENT VS.
FORWARD VOLTAGE
Ambient Temperature T
A
(
o
C)
FIG.4 RELATIVE RADIANT INTENSITY
VS. AMBIENT TEMPERATURE
Output Power Relative To
Value at I
F
=20mA
Forward Current (mA)
FIG.5 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
30
90
70
60
50
80
40
FIG.6 RADIATION DIAGRAM