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Электронный компонент: HE8550-TO-92

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UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-010,A
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL PNP TRANSISTOR
DESCRIPTION
The UTC HE8550 is a low voltage high current small
signal PNP transistor, designed for Class B push-pull
2W audio amplifier for portable radio and general purpose
applications.

FEATURES
*Collector current up to 1.5A
*Collector-Emitter voltage up to 25 V
*Complimentary to UTC HE8050
TO-92
1
1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS
(Ta=25
C, unless otherwise specified)
PARAMETER SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CEO
-25 V
Emitter-Base Voltage
V
EBO
-6 V
Collector Dissipation(Ta=25
)
Pc 1
W
Collector Current
Ic
-1.5
A
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-65 ~ +150
C

ELECTRICAL CHARACTERISTICS
(Tj=25
C, unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BV
CBO
Ic=-100
A,I
E
=0 -40
V
Collector-Emitter Breakdown Voltage
BV
CEO
Ic=-2mA,I
B
=0 -25
V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=-100
A,Ic=0 -6
V
Collector Cut-Off Current
I
CBO
V
CB
=-35V,I
E
=0
-100
nA
Emitter Cut-Off Current
I
EBO
V
EB
=-6V,Ic=0
-100
nA
DC Current Gain(note)
h
FE1
h
FE2
h
FE3
V
CE
=-1V,Ic=-5mA
V
CE
=-1V,Ic=-100mA
V
CE
=-1V,Ic=-800mA
45
85
40
170
160
80
500
Collector-Emitter Saturation Voltage
V
CE
(sat) Ic=-800mA,I
B
=-80mA
-0.28
-0.5
V
Base-Emitter Saturation Voltage
V
BE
(sat) Ic=-800mA,I
B
=-80mA
-0.98
-1.2
V
Base-Emitter Voltage
V
BE
V
CE
=-1V,Ic=-10mA
-0.66
-1.0
V
Current Gain Bandwidth Product
f
T
V
CE
=-10V,Ic=-50mA 100
190
MHz
Output Capacitance
Cob
V
CB
=-10V,I
E
=0
f=1MHz
9.0 pF
UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R201-010,A

CLASSIFICATION OF hFE
RANK C D E
RANGE 120-200 160-300 250-500

TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
Ic,Co
lle
cto
r
cu
r
r
e
n
t
(
m
A)
-0
-0.4
-0.8
-1.2
-1.6
-2.0
0
-0.1
-0.2
-0.3
-0.4
-0.5
I
B
=-0.5mA
I
B
=-1.0mA
I
B
=-1.5mA
I
B
=-2.0mA
I
B
=-2.5mA
I
B
=-3.0mA
Fig.2 DC current Gain
Ic,Collector current (mA)
H
FE
, DC current Gain
10
2
10
1
10
0
10
3
-10
3
-10
2
-10
1
-10
0
-10
-1
V
CE
=-1V
Fig.3 Base-Emitter on Voltage
Ic,Co
lle
cto
r
cu
r
r
e
n
t
(
m
A)
Base-Emitter voltage (V)
0
-0.2
-0.4
-0.6
-0.8
-1.0
V
CE
=-1V
Ic,Collector current (mA)
S
a
t
u
rat
i
on v
o
lt
age (mV
)
-10
1
-10
2
-10
3
-10
4
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
V
CE
(sat)
V
BE
(sat)
Ic=10*I
B
Ic,Collector current (mA)
10
3
Current
G
a
in-bandwidt
h
produc
t
,
f
T
(MHz)
10
0
10
1
10
2
V
CE
=-10V
Collector-Base voltage (V)
Cob,
Capac
it
anc
e (pF)
10
3
10
0
10
1
10
2
f=1MHz
I
E
=0
-10
0
-10
1
-10
2
-10
3
-10
3
-10
2
-10
1
-10
0
-10
-1
-10
0
-10
1
-10
2
-10
3
-10
0
-10
1
-10
2
-10
3






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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
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