UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R201-002,A
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
* High Collector-Emitter Voltage:
V
CEO
=160V
*High current gain
APPLICATIONS
*Telephone switching circuit
*Amplifier
TO-92
1
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS
( Ta=25
C ,unless otherwise specified )
PARAMETERS SYMBOL
RATING
UNIT
Collector-base voltage
V
CBO
180 V
Collector-emitter voltage
V
CEO
160 V
Emitter-base voltage
V
EBO
6 V
Collector dissipation
Pc
625
mW
Collector current
Ic
600
mA
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-55 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C,unless otherwise specified)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Collector-base breakdown voltage
BV
CBO
Ic=100
A,I
E
=0
180
V
Collector-emitter breakdown voltage
BV
CEO
Ic=1mA,I
B
=0 160
V
Emitter-base breakdown voltage
BV
EBO
I
E
=10
A,Ic=0
6 V
Collector cut-off current
I
CBO
V
CB
=120V,I
E
=0
50
nA
Emitter cut-off current
I
EBO
V
BE
=4V,Ic=0
50
nA
DC current gain(note)
h
FE
V
CE
=5V,Ic=1mA
V
CE
=5V,Ic=10mA
V
CE
=5V,Ic=50mA
80
80
80
160
400
Collector-emitter saturation voltage
V
CE
(sat) Ic=10mA,I
B
=1mA
Ic=50mA,I
B
=5mA
0.15
0.2
V
Base-emitter saturation voltage
V
BE
(sat) Ic=10mA,I
B
=1mA
Ic=50mA,I
B
=5mA
1
1
V
Current gain bandwidth product
f
T
V
CE
=10V,Ic=10mA,f=100MHz
100
300
MHz
UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R201-002,A
(continued)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Output capacitance
Cob
V
CB
=10V,I
E
=0
f=1MHz
6.0
pF
Noise Figure
NF
Ic=0.25mA,V
CE
=5V
Rs=1k
,f=10Hz to 15.7kHz
8 dB
Note:Pulse test:PW<300
s,Duty Cycle<2%
CLASSIFICATION OF hFE
RANK
A B C
RANGE 80-170 150-240 200-400
TYPICAL CHARACTERISTIC CURVES
Fig.2 DC current Gain
Ic,Collector current (mA)
hF
E
,
DC c
u
r
r
ent G
a
i
n
10
2
10
1
10
0
10
3
10
3
10
2
10
1
10
0
10
-1
V
CE
=5V
Fig.3 Base-Emitter on Voltage
10
0
10
1
10
2
Ic
,Col
l
e
c
t
or
c
u
r
r
ent (
m
A
)
Base-Emitter voltage (V)
0
0.2
0.4
0.6
0.8
1.0
V
CE
=5V
Ic,Collector current (mA)
10
3
10
2
10
1
10
0
10
-1
S
a
tur
a
ti
on v
o
l
t
age (
V
)
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
Fig.1 Collector output
Capacitance
V
CE
(sat)
V
BE
(sat)
Ic=10*I
B
Ic,Collector current (mA)
10
0
10
1
10
2
10
3
Cur
r
ent G
a
i
n
-
bandwi
d
th
pr
oduc
t,f
T
(MH
z
)
10
0
10
1
10
2
V
CE
=10V
Collector-Base voltage (V)
Cob,Capac
i
t
anc
e (
p
F
)
10
3
10
0
10
1
10
2
0
2
4
6
8
10
f=1MHz
I
E
=0
10
3
10
1
10
0
10
-1
10
-2
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