UTC 2SD1802 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R209-001,A
HIGH CURRENT SWITCHING
APPLICATION
DESCRIPTION
The UTC 2SD1802 applies to voltage regulators, relay
drivers, lamp drivers, and electrical equipment.
FEATURES
*Adoption of FBET, MBIT processes
*Large current capacity and wide ASO
*Low collector-to-emitter saturation voltage
*Fast switching speed
TO-252
1
1: BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS
( Ta=25
C ,unless otherwise specified )
PARAMETER SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
6 V
Collector Power Dissipation
Tc=25
C
Pc 1
15
W
W
Collector Current(DC)
Ic
3
A
Collector Current(PULSE)
Icp
6
A
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-55 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C, unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cutoff Current
I
CBO
V
CB
=40V,I
E
=0
1
A
Emitter Cutoff Current
I
EBO
V
EB
=4V,I
C
=0
1
A
DC Current Gain (note)
h
FE1
h
FE2
V
CE
=2V, Ic=100mA
V
CE
=2V, Ic=3A
100
35
560
Gain-Bandwidth Product
fT
V
CE
=10V,I
C
=50mA
150
MHz
Output Capacitance
Cob
V
CB
=10V,f=1MHz
25
pF
C-E Saturation Voltage
V
CE(sat)
I
C
=2A,I
B
=100mA
0.19
0.5
V
B-E Saturation Voltage
V
BE(sat)
I
C
=2A,I
B
=100mA
0.94
1.2
V
C-B Breakdown Voltage
V
(BR)CBO
I
C
=10
A,I
E
=0 60
V
C-E Breakdown Voltage
V
(BR)CEO
I
C
=1mA,R
BE
=
50
V
E-B Breakdown Voltage
V
(BR)EBO
I
E
=10
A,I
C
=0 6
V
Turn-on Time
ton
See test circuit
70
ns
UTC 2SD1802 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R209-001,A
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
TYP
MAX
UNIT
Storage Time
tstg
See test circuit
650
ns
Fall Time
tf
See test circuit
35
ns
CLASSIFICATION OF h
FE1
RANK R S T U
RANGE 100-200 140-280 200-400 280-560
TEST CIRCUIT
(Unit : resistance :
, capacitance : F)
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