UTC 2SD882 NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R204-001,A
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SB772
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
TO-126
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25
C ,unless otherwise specified )
PARAMETER SYMBOL
RATING
UNIT
Collector-base voltage
V
CBO
40 V
Collector-emitter voltage
V
CEO
30 V
Emitter-base voltage
V
EBO
5 V
Collector dissipation( Tc=25
C)
Pc 10
W
Collector dissipation( Ta=25
C)
Pc 1
W
Collector current(DC)
Ic
3
A
Collector current(PULSE)
Ic
7
A
Base current
I
B
0.6
A
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-55 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C,unless otherwise specified)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Collector cut-off current
I
CBO
V
CB
=30V,I
E
=0
1000
nA
Emitter cut-off current
I
EBO
V
EB
=3V,Ic=0
1000
nA
DC current gain(note 1)
h
FE1
h
FE2
V
CE
=2V,Ic=20mA
V
CE
=2V,Ic=1A
30
100
200
150
400
Collector-emitter saturation voltage
V
CE
(sat) Ic=2A,I
B
=0.2A
0.3
0.5
V
Base-emitter saturation voltage
V
BE
(sat) Ic=2A,I
B
=0.2A
1.0
2.0
V
Current gain bandwidth product
f
T
V
CE
=5V,Ic=0.1A
80
MHz
Output capacitance
Cob
V
CB
=10V,I
E
=0,f=1MHz
45
pF
Note 1:Pulse test:PW<300
s,Duty Cycle<2%
UTC 2SD882 NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R204-001,A
CLASSIFICATION OF hFE2
RANK Q P E
RANGE 100-200 160-320 200-400
TYPICAL PARAMETERS PERFORMANCE
Fig.1 Static characteristics
-Collector-Emitter voltage(V)
-I
c
,
Co
lle
c
t
o
r c
u
rre
n
t
(A
)
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
Tc,Case Temperature(C)
-IB=1mA
-IB=2mA
-IB=3mA
-IB=4mA
-IB=5mA
-IB=6mA
-IB=7mA
-IB=8MA
-IB=9mA
Fig.2 Derating curve of safe
operating areas
-
Ic D
e
r
a
ti
ng(
%)
200
150
100
50
0
-50
0
50
100
150
S/b
lim
ited
D
iss
ip
atio
n li
m
ite
d
Tc,Case Temperature(C)
200
150
100
50
0
-50
Fig.3 Power Derating
P
o
wer
Dis
s
i
pat
ion(
W
)
0
4
8
12
Fig.4 Collector Output
capacitance
-Collector-Base Voltage(v)
Output C
apac
i
t
anc
e(
pF
)
10
0
10
-1
10
-2
10
-3
10
1
10
2
10
3
10
0
I
E
=0
f=1MHz
Fig.5 Current gain-
bandwidth product
F
T
(
M
H
z
)
,
C
u
r
r
ent gai
n-
bandw
i
d
th pr
oduc
t
10
1
10
2
10
3
10
0
V
CE
=5V
Collector-Emitter Voltage
-
I
c,Co
lle
cto
r
cu
r
r
e
n
t
(
A
)
Fig.6 Safe operating area
Ic(max),DC
Ic(max),Pulse
10m
S
1m
S
0.1mS
Ic,Collector current(A)
Fig.7 DC current gain
-Ic,Collector current(mA)
-Ic,Collector current(mA)
Fig.8 Saturation Voltage
DC cu
rre
n
t
G
a
in
,
H
FE
10
1
10
2
10
3
10
0
-
S
at
ur
at
ion V
o
lt
age(
m
V
)
V
CE
=-2V
V
CE
(sat)
V
BE
(sat)
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
10
4
10
0
10
1
10
2
10
3
10
4
10
0
10
1
10
2
10
3
10
4
I
B
=8mA
I
B
=8mA
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