XL/ML1225
SCR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
DESCRIPTION
The XL1225/ML1225 silicon controlled rectifiers are high
performance planner diffused PNPN devices. These parts
are intended for low cost high volume applications.
TO-92
1
1:CATHODE 2:GATE 3:ANODE
ABSOLUTE MAXIMUM RATINGS
( Ta=25
C ,unless otherwise specified )
PARAMETERS
PART NO.
SYMBOL
TEST
CONDITION
MIN.
RATING
MAX.
RATING
UNITS
Repetitive Peak Off-State Voltage
XL1225
ML1225
V
DRM
V
DRM
Tj=40 to 125
C
(rgk=1k
)
400
300
V
On-State Current
IT(RMS)
Tc=40
C
0.8
A
Average On-State Current
IT(AV)
Half Cycle=180,
Tc=40
C
0.5
A
Peak Reverse Gate Voltage
VG
RM
IGR=10uA
1
V
Peak Gate Current
IGM
10us Max.
0.1
A
Gate Dissipation
PG(AV)
20ms Max.
150
W
Operating Temperature
Tj
-40
125
C
Storage Temperature
T
STG
-40
125
C
Soldering Temperature
T
SLD
1.6mm from case
10s Max.
250
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT
Off state leakage current
IDRM
@V
DRM(RGK
=1K
), Tj=125
C
0.1
mA
Off state leakage current
IDRM
@V
DRM(RGK
=1K
), Tj=25
C
1.0
A
On state voltage
VT
AT IT=0.4A
AT IT=0.8A
1. 4
2.2
V
On state threshold voltage
VT(TO)
Tj=125
C
0.95
V
On state slops resistance
Rt
Tj=125
C
600
m
Gate trigger current
IGT
VD=7V
200
A
Gate trigger voltage
VGT
VD=7V
0.8
V
Holding current
IH
RGK=1K
5
mA
Latching current
IL
RGK=1K
6
mA
Critical rate of voltage rise
DV/DT
VD=0.67*VDRM(RGK=1K
),
Tj=125
C
V/
s
Critical rate of current rise
DV/DT
IG=10mA, dIG/dt=0.1A/
s,
Tj=125
C
A/
s
Gate controlled delay time
TGD
IG=10mA, dIG/dt=0.1A/
s,
500
s
Commutated turn-off time
TG
Tj=85
C, VD=0.67*VDRM,
VR=35V, IT=IT(AV)
200
s
XL/ML1225
SCR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT
Thermal resistance junc. to case
R
JC
K/W
Thermal resistance junc. to case
R
JA
K/W
CLASSIFICATION OF hFE
RANK
B
C
AA
AB
AC
AD
RANGE
50-100
A
100-200
A
8-15
A
15-20
A
20-25
A
25-50
A
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