UTC MPSA14 NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R208-008,A
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC MPSA14 is a Darlington transistor.
FEATURES
*Collector-Emitter Voltage: V
CES
= 30V
*Collector Dissipation: Pc (mas) = 625 mW
SOT-89
1
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS
(Operating temperature range applies unless otherwise specified.)
PARAMETER SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
30 V
Collector-Emitter Voltage
V
CES
30 V
Emitter-Base Voltage
V
EBO
10 V
Collector Dissipation (Tc=25
C
)
Pc 625
mW
Collector Current
Ic
500
mA
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-55 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Tj=25
C, unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
MAX
UNIT
Collector-Emitter Breakdown Voltage
BV
CES
Ic=100
A,I
B
=0
30 V
Collector Cut-Off Current
I
CBO
V
CB
=30V,I
E
=0
100
nA
Emitter Cut-Off Current
I
EBO
V
EB
=10V,Ic=0
100
nA
DC Current Gain
h
FE
V
CE
=5V,Ic=100mA 20000
Collector-Emitter Saturation Voltage
V
CE
(sat) Ic=100mA,I
B
=0.1mA
1.5
V
Base-Emitter on Voltage
V
BE
(on) V
CE
=5V,Ic=100mA
2.0
V
Current Gain Bandwidth Product
f
T
V
CE
=5V,Ic=10mA,
f=100MHz
125 MHz
Pulse test: Pulse Width<300
s, Duty Cycle=2%
PDF 
ZIP