UTC TIP110A PNP EXPITAXIAL PLANAR TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R203-004,A
LOW SATURATION VOLTAGE PNP
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC TIP110A is designed for using in general purpose
amplifier and switching applications.
FEATURE
*Low VCE(sat)
*High current gain
TO-220
1
1:BASE 2:COLLECTOR 3:EMITTER
MAXIMUM RATINGS
(Ta=25
C)
CHARACTERISTICS SYMBOL VALUE UNITS
Collector Base Voltage
V
CBO
40 V
Collector to Emitter Voltage
V
CEO
30 V
Emitter To base Voltage
V
EBO
5 V
Collector Current
I
C
10
A
Junction Temperature
T
j
150(Max)
C
Storage Temperature
T
stg
-55 ~ +150
C
Total Power Dissipations
P
D
65
W
CHARACTERISTICS
(Ta=25
C
)
SYMBOL TEST
CONDITIONS MIN TYP MAX UNIT
BV
CEO
I
C
=100mA 30
V
I
CBO
V
CB
=40V
1
A
I
CEO
V
CE
=20V
1
A
I
EBO
V
EB
=5V
100
nA
V
CE
(SAT) I
C
=10A,I
B
=10mA
2.0
V
V
BE
(ON) I
C
=5mA,V
CE
=2.0V
2.0
V
h
FE1
I
C
=500mA,V
CE
=2.0V 2
60
K
h
FE2
I
C
=10A,V
CE
=2.0V 1
20
60
K
UTC TIP110A PNP EXPITAXIAL PLANAR TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R203-004,A
TYPICAL PERFORMANCE CHARACTERISTICS
10
1
10
2
10
3
10
4
10
2
10
3
10
4
CURRENT GAIN VS.
COLLECTOR CURRENT
Collector Current(mA)
C
u
rre
n
t
Ga
in
(H
f
e
)
1
10
10
-1
10
2
10
1
10
2
10
3
OUTPUT CAPACITANCE VS.
REVERSE-BIASED VOLTAGE
O
u
tput Capac
i
t
anc
e(
pF
)
Reverse-Biased Voltage
10
1
10
2
10
4
10
4
10
3
ON VOLTAGE VS.
COLLECTOR CURRENT
Collector Current(mA)
O
n
V
o
lt
age(
m
V
)
10
4
10
3
10
2
10
1
10
2
10
3
10
4
SATURATIION VOLTAGE VS.
COLLECTOR CURRENT
S
a
t
u
r
a
t
i
on V
o
lt
age(
m
V
)
Collector Current(mA)
1
10
10
2
10
3
10
4
10
5
10
2
1
10
PT=1ms
PT=100ms
PT=1s
SAFE OPERATING AREA
Col
l
e
c
t
or
Cur
r
ent(
m
A
)
Collector-Emitter Voltage ( V )
10
4
10
3
10
3
10
2
10
1
SWITCHING TIMES VS.
COLLECTOR CURRENT
S
w
it
c
h
ing T
i
m
e
s
(
ns
)
Collector Current(mA)
Tstg
10
3
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