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Электронный компонент: UTCTIP122

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UTC TIP122
NPN EPITAXIAL PLANAR TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R203-006,A
NPN EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC TIP122 is a NPN epitaxial transistor, designed
for use in general purpose amplifier low-speed switching
applications.
TO-220
B
C
E
ABSOLUTE MAXIMUM RATINGS
(Ta=25
C)
PARAMETER SYMBOL VALUE UNIT
Storage Temperature
Ts
-55 ~ +150
C
Junction Temperature
Tj
150
C
Total Power Dissipation
P
D
65
W
Collector to Base Voltage
V
CBO
100 V
Collector to Emitter Voltage
V
CEO
100 V
Emitter to Base Voltage
V
EBO
5 V
IC Collector Current
5
A
ELECTRICAL
CHARACTERISTICS
(Ta=25
C)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=100mA 100
V
Collector Cut-Off Current
I
CBO
V
CB
=100V
200
uA
Collector-Cut-Off Current
I
CEO
V
CE
=50V
500
uA
Emitter Cut-Off Current
I
EBO
V
EB
=5V
2
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)1
I
C
=3A, I
B
=12mA
2
V
Collector-Emitter Saturation Voltage
V
CE(SAT)2
I
C
=5A, I
B
=20mA
4
V
Base-Emitter Saturation Voltage
V
BE(ON)
V
CE
=3V, I
C
=3A
2.5
V
DC Current Gain
h
FE
I
C
=500mA, V
CE
=3V
I
C
=3A, V
CE
=3V
1 K


UTC TIP122
NPN EPITAXIAL PLANAR TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R203-006,A
1
10
100
1000
10
100
1000
10000
SAFE OPERATI NG AREA
FORWARD VOLTAGE- -- VCE( V)
PT=1ms
PT=100ms
PT=1s
CO
L
L
E
C
TO
R
C
URR
E
N
T
-
mA
1
1
10
100
0.1
1
10
S O A
VCEO,COLLECTOR TO EMITTER VOLTAGE-(V)
PT=1MS
PT=10MS
I
C
,
CO
LLE
CT
O
R

C
URRE
NT
-(A
)
100
1000
1000
1000
10000
VBE(ON) VS. IC
IC , COLLECTOR CURRENT
VBE(
O
N
)-(M
V
)
100
1000
10000
1000
1000
VBE(SAT) VS. IC
I
C , COLLECTOR CURRENT
V B
E
UTC TIP122
NPN EPITAXIAL PLANAR TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R203-006,A
1
10
100
1000
10000
1
10
100
1000
10000
hFE VS. IC
IC , COLLECTOR CURRENT
hF
E
,
DC CURRE
NT
GA
I
N
100
1000
1000
100
1000
10000
VCE(SAT) VS. IC
IC , COLLECTOR CURRENT ( MA ),IC=250IB
V
C
E(SA
T)-(M
V
)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
20 40 60 80 100 120 140 160 180
PD(
W
)
POW
E
R
DI
SSI
PAT
I
ON
TA AMBIENT TEMPERATURE