FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
APPLICATIONS
D Automotive
- Full Injection Systems
- Wipers
- Door Modules
SUM40N05-19L
Vishay Siliconix
New Product
Document Number: 72386
S-31922--Rev. A, 15-Sep-03
www.vishay.com
1
N-Channel 55-V (D-S), 175_C MOSFET, Logic Level
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(on)
(W)
I
D
(A)
55
0.019 @ V
GS
= 10 V
40
55
0.025 @ V
GS
= 4.5 V
35
D
G
S
N-Channel MOSFET
DRAIN connected to TAB
TO-263
S
G
Top View
D
Ordering Information: SUM40N05-19L
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
55
V
Gate-Source Voltage
V
GS
"20
V
Continuous Drain Current
T
C
= 25_C
I
D
40
Continuous Drain Current
(T
J
= 175_C)
T
C
= 100_C
I
D
28
A
Pulsed Drain Current
I
DM
80
A
Avalanche Current, Single Pulse
I
AS
30
Avalanche Energy, Single Pulse
L = 0.1 mH
E
AS
45
mJ
Power Dissipation
T
C
= 25_C
P
D
65
a
W
Power Dissipation
T
A
= 25_C
c
P
D
3.1
b
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient (PCB Mount)
b
R
thJA
40
_C/W
Junction-to-Case
R
thJC
2.3
_C/W
Notes:
a.
See SOA curve for voltage derating.
b.
Surface Mounted on FR4 Board, t v 10 sec.
SUM40N05-19L
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72386
S-31922--Rev. A, 15-Sep-03
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
55
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
DS
= 250 mA
1.0
2.0
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "20 V
"100
nA
V
DS
= 55 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 55 V, V
GS
= 0 V, T
J
= 125_C
50
mA
g
DSS
V
DS
= 55 V, V
GS
= 0 V, T
J
= 175_C
250
m
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
40
A
V
GS
= 10 V, I
D
= 20 A
0.0155
0.019
Drain Source On State Resistance
a
r
DS( )
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
0.033
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 175_C
0.040
W
V
GS
= 4.5 V, I
D
= 15 A
0.020
0.025
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
50
S
Dynamic
b
Input Capacitance
C
iss
885
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
185
pF
Reversen Transfer Capacitance
C
rss
80
Total Gate Charge
c
Q
g
10.5
13
Gate-Source Charge
c
Q
gs
V
DS
= 25 V,
V
GS
= 10 V, I
D
= 35 A
4
nC
Gate-Drain Charge
c
Q
gd
DS
,
GS
,
D
4.8
Gate Resistance
R
g
f = 1.0 MHz
5.0
W
Turn-On Delay Time
c
t
d(on)
5
8
Rise Time
c
t
r
V
DD
= 25 V, R
L
= 0.3 W
18
30
ns
Turn-Off Delay Time
c
t
d(off)
V
DD
= 25 V, R
L
= 0.3 W
I
D
] 35 A, V
GEN
= 10 V, R
G
= 2.5 W
20
30
ns
Fall Time
c
t
f
D
GEN
G
100
150
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
I
s
35
A
Pulsed Current
I
SM
80
A
Forward Voltage
a
V
SD
I
F
= 35 A, V
GS
= 0 V
1.0
1.5
V
Reverse Recovery Time
t
rr
25
40
ns
Peak Reverse Recovery Current
I
RM(REC)
I
F
= 35 A, di/dt = 100 A/ms
1.5
2.5
A
Reverse Recovery Charge
Q
rr
F
,
m
0.019
0.05
mC
Notes:
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
c.
Independent of operating temperature.
SUM40N05-19L
Vishay Siliconix
New Product
Document Number: 72386
S-31922--Rev. A, 15-Sep-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
5
10
15
20
0
10
20
30
40
0
300
600
900
1200
1500
0
11
22
33
44
55
0.00
0.01
0.02
0.03
0.04
0
20
40
60
80
100
0
10
20
30
40
50
60
0
20
40
60
80
100
0
20
40
60
80
100
0
2
4
6
8
0
20
40
60
80
100
0
2
4
6
8
10
Output Characteristics
Transfer Characteristics
Capacitance
Gate Charge
Transconductance
On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
-
Gate-to-Source V
oltage
(V)
-
On-Resistance (
Q
g
- Total Gate Charge (nC)
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
r
DS(on)
)
V
GS
-
T
ransconductance
(S)
g
fs
25_C
125_C
4 V
T
C
= -55_C
V
DS
= 25 V
I
D
= 35 A
V
GS
= 10 thru 6 V
5 V
V
GS
= 10 V
V
GS
= 4.5 V
C
rss
T
C
= -55_C
25_C
125_C
3 V
C
oss
C
iss
I
D
- Drain Current (A)
SUM40N05-19L
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72386
S-31922--Rev. A, 15-Sep-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Drain Source Breakdown vs.
Junction Temperature
0.0
0.4
0.8
1.2
1.6
2.0
2.4
-50 -25
0
25
50
75
100 125 150 175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
- Junction Temperature (_C)
V
SD
- Source-to-Drain Voltage (V)
-
Source Current (A)
I
S
100
10
1
0.3
0.6
0.9
1.2
V
GS
= 10 V
I
D
= 20 A
T
J
= 25_C
T
J
= 150_C
(Normalized)
-
On-Resistance (
r
DS(on)
W
)
0
50
54
58
62
66
70
-50 -25
0
25
50
75
100 125 150 175
T
J
- Junction Temperature (_C)
(V)
V
(BR)DSS
I
D
= 10 mA
1.5
SUM40N05-19L
Vishay Siliconix
New Product
Document Number: 72386
S-31922--Rev. A, 15-Sep-03
www.vishay.com
5
THERMAL RATINGS
Normalized Thermal Transient Impedance, Junction-to-Case
-
Drain Current (A)
I
D
0
10
20
30
40
50
0
25
50
75
100
125
150
175
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
200
10
0.1
0.1
1
10
100
1
100
T
C
= 25_C
Single Pulse
1 ms
10 ms
dc, 100 ms
100 ms
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
Normalized Ef
fective
T
ransient
Thermal Impedance
1
Drain Current vs. Case Temperature
T
C
- Case Temperature (_C)
0.2
0.02
Single Pulse
Duty Cycle = 0.5
10 ms
0.05
0.1
Limited by r
DS(on)
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