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Электронный компонент: 1N4737A

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1N4728A...1N4761A
Vishay Telefunken
Rev. 2, 01-Apr-99
1 (4)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85587
Silicon Power ZDiodes
Features
D
Very sharp reverse characteristic
D
Very high stability
D
Low reverse current level
D
V
Z
tolerance
5%
Applications
Voltage stabilization
94 9369
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Power dissipation
T
amb
x
50
C
P
V
1
W
Zcurrent
I
Z
P
V
/V
Z
mA
Junction temperature
T
j
200
C
Storage temperature range
T
stg
65...+200
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
l=9.5mm (3/8"), T
L
=constant
R
thJA
100
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
I
F
=200mA
V
F
1.2
V
1N4728A...1N4761A
Vishay Telefunken
Rev. 2, 01-Apr-99
2 (4)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85587
Type
V
Znom
1)
I
ZT
for r
zjT
r
zjk
at I
ZK
I
R
at V
R
1N4728A
3.3
76
< 10
< 400
1.0
< 100
1
1N4729A
3.6
69
< 10
< 400
1.0
< 100
1
1N4730A
3.9
64
< 9
< 400
1.0
< 50
1
1N4731A
4.3
58
< 9
< 400
1.0
< 10
1
1N4732A
4.7
53
< 8
< 500
1.0
< 10
1
1N4733A
5.1
49
< 7
< 550
1.0
< 10
1
1N4734A
5.6
45
< 5
< 600
1.0
< 10
2
1N4735A
6.2
41
< 2
< 700
1.0
< 10
3
1N4736A
6.8
37
< 3.5
< 700
1.0
< 10
4
1N4737A
7.5
34
< 4.0
< 700
0.5
< 10
5
1N4738A
8.2
31
< 4.5
< 700
0.5
< 10
6
1N4739A
9.1
28
< 5.0
< 700
0.5
< 10
7
1N4740A
10
25
< 7
< 700
0.25
< 10
7.6
1N4741A
11
23
< 8
< 700
0.25
< 5
8.4
1N4742A
12
21
< 9
< 700
0.25
< 5
9.1
1N4743A
13
19
< 10
< 100
0,25
< 5
9.9
1N4744A
15
17
< 14
< 700
0.25
< 5
11.4
1N4745A
16
15.5
< 16
< 700
0.25
< 5
12.2
1N4746A
18
14
< 20
< 750
0.25
< 5
13.7
1N4747A
20
12.5
< 22
< 750
0.25
< 5
15.2
1N4748A
22
11.5
< 23
< 750
0.25
< 5
16.7
1N4749A
24
10.5
< 25
< 750
0.25
< 5
18.2
1N4750A
27
9.5
< 35
< 750
0.25
< 5
20.6
1N4751A
30
8.5
< 40
< 1000
0.25
< 5
22.8
1N4752A
33
7.5
< 45
< 1000
0.25
< 5
25.1
1N4753A
36
7.0
< 50
< 1000
0.25
< 5
27.4
1N4754A
39
6.5
< 60
< 1000
0.25
< 5
29.7
1N4755A
43
6.0
< 70
< 1500
0.25
< 5
32.7
1N4756A
47
5.5
< 80
< 1500
0.25
< 5
35.8
1N4757A
51
5.0
< 95
< 1500
0.25
< 5
38.8
1N4758A
56
4.5
< 110
< 2000
0.25
< 5
42.6
1N4759A
62
4.0
< 125
< 2000
0.25
< 5
47.1
1N4760A
68
3.7
< 150
< 2000
0.25
< 5
51.7
1N4761A
75
3.3
< 175
< 2000
0.25
< 5
56.0
1)
Based on dcmeasurement at thermal equilibrium while maintaining the
lead temperature (T
L
) at 30
C + 1
C, 9.5mm (3/8") from the diode body.
1N4728A...1N4761A
Vishay Telefunken
Rev. 2, 01-Apr-99
3 (4)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85587
Dimensions in mm
Cathode Identification
2.5 max.
0.85 max.
4.1 max.
26 min.
94 9368
technical drawings
according to DIN
specifications
Standard Glass Case
54 B 2 DIN 41880
JEDEC DO 41
Weight max. 0.3 g
26 min.
1N4728A...1N4761A
Vishay Telefunken
Rev. 2, 01-Apr-99
4 (4)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85587
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423