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Электронный компонент: 1N5231B

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1N5221B...1N5267B
Vishay Telefunken
Rev. 2, 06-Aug-99
1 (4)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85588
Silicon ZDiodes
Features
D
Very sharp reverse characteristic
D
Very high stability
D
Low reverse current level
D
V
Z
tolerance
5%
Applications
Voltage stabilization
94 9367
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Power dissipation
T
L
x
75
C
P
V
500
mW
Zcurrent
I
Z
P
V
/V
Z
mA
Junction temperature
T
j
200
C
Storage temperature range
T
stg
65...+200
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
l=9.5mm (3/8"), T
L
=constant
R
thJA
300
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
I
F
=200mA
V
F
1.1
V
1N5221B...1N5267B
Vishay Telefunken
Rev. 2, 06-Aug-99
2 (4)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85588
Type
V
Znom
1)
I
ZT
for r
zjT
r
zjk
at I
ZK
I
R
at V
R
TK
VZ
V
mA
W
W
mA
m
A
V
%/K
1N5221B
2.4
20
< 30
< 1200
0.25
< 100
1.0
< 0.085
1N5222B
2.5
20
< 30
< 1250
0.25
< 100
1.0
< 0.085
1N5223B
2.7
20
< 30
< 1300
0.25
< 75
1.0
< 0.080
1N5224B
2.8
20
< 30
< 1400
0.25
< 75
1.0
< 0.080
1N5225B
3.0
20
< 29
< 1600
0.25
< 50
1.0
< 0.075
1N5226B
3.3
20
< 28
< 1600
0.25
< 25
1.0
< 0.070
1N5227B
3.6
20
< 24
< 1700
0.25
< 15
1.0
< 0.065
1N5228B
3.9
20
< 23
< 1900
0.25
< 10
1.0
< 0.060
1N5229B
4.3
20
< 22
< 2000
0.25
< 5
1.0
< +0.055
1N5230B
4.7
20
< 19
< 1900
0.25
< 5
2.0
< +0.030
1N5231B
5.1
20
< 17
< 1600
0.25
< 5
2.0
< +0.030
1N5232B
5.6
20
< 11
< 1600
0.25
< 5
3.0
< +0.038
1N5233B
6.0
20
< 7
< 1600
0.25
< 5
3.5
< +0.038
1N5234B
6.2
20
< 7
< 1000
0.25
< 5
4.0
< +0.045
1N5235B
6.8
20
< 5
< 750
0.25
< 3
5.0
< +0.050
1N5236B
7.5
20
< 6
< 500
0.25
< 3
6.0
< +0.058
1N5237B
8.2
20
< 8
< 500
0.25
< 3
6.5
< +0.062
1N5238B
8.7
20
< 8
< 600
0.25
< 3
6.5
< +0.065
1N5239B
9.1
20
< 10
< 600
0.25
< 3
7.0
< +0.068
1N5240B
10
20
< 17
< 600
0.25
< 3
8.0
< +0.075
1N5241B
11
20
< 22
< 600
0.25
< 2
8.4
< +0.076
1N5242B
12
20
< 30
< 600
0.25
< 1
9.1
< +0.077
1N5243B
13
9.5
< 13
< 600
0.25
< 0.5
9.9
< +0.079
1N5244B
14
9.0
< 15
< 600
0.25
< 0.1
10
< +0.082
1N5245B
15
8.5
< 16
< 600
0.25
< 0.1
11
< +0.082
1N5246B
16
7.8
< 17
< 600
0.25
< 0.1
12
< +0.083
1N5247B
17
7.4
< 19
< 600
0.25
< 0.1
13
< +0.084
1N5248B
18
7.0
< 21
< 600
0.25
< 0.1
14
< +0.085
1N5249B
19
6.6
< 23
< 600
0.25
< 0.1
14
< +0.086
1N5250B
20
6.2
< 25
< 600
0.25
< 0.1
15
< +0.086
1N5251B
22
5.6
< 29
< 600
0.25
< 0.1
17
< +0.087
1N5252B
24
5.2
< 33
< 600
0.25
< 0.1
18
< +0.088
1N5253B
25
5.0
< 35
< 600
0.25
< 0.1
19
< +0.089
1N5254B
27
4.6
< 41
< 600
0.25
< 0.1
21
< +0.090
1N5255B
28
4.5
< 44
< 600
0.25
< 0.1
21
< +0.091
1N5256B
30
4.2
< 49
< 600
0.25
< 0.1
23
< +0.091
1N5257B
33
3.8
< 58
< 700
0.25
< 0.1
25
< +0.092
1N5258B
36
3.4
< 70
< 700
0.25
< 0.1
27
< +0.093
1N5259B
39
3.2
< 80
< 800
0.25
< 0.1
30
< +0.094
1N5260B
43
3.0
< 93
< 900
0.25
< 0.1
33
< +0.095
1N5261B
47
2.7
< 105
< 1000
0.25
< 0.1
36
< +0.095
1N5262B
51
2.5
< 125
< 1100
0.25
< 0.1
39
< +0.096
1N5263B
56
2.2
< 150
< 1300
0.25
< 0.1
43
< +0.096
1N5264B
60
2.1
< 170
< 1400
0.25
< 0.1
46
< +0.097
1N5265B
62
2.0
< 185
< 1400
0.25
< 0.1
47
< +0.097
1N5266B
68
1.8
< 230
< 1600
0.25
< 0.1
52
< +0.097
1N5267B
75
1.7
< 270
< 1700
0.25
< 0.1
56
< +0.098
1)
Based on dcmeasurement at thermal equilibrium; lead length = 9.5mm (3/8"); thermal resistance of heat sink = 30K/W
1N5221B...1N5267B
Vishay Telefunken
Rev. 2, 06-Aug-99
3 (4)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85588
Dimensions in mm
Cathode Identification
1.7 max.
0.55 max.
3.9 max.
26 min.
technical drawings
according to DIN
specifications
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3 g
26 min.
1N5221B...1N5267B
Vishay Telefunken
Rev. 2, 06-Aug-99
4 (4)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85588
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423