1N914
Vishay Telefunken
1 (3)
Rev. 1, 26-Apr-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85622
Fast Switching Diodes
Features
D
Fast switching speed
D
High reliability
D
High conductance
D
For general purpose switching applications
94 9367
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Non repetitive peak reverse voltage
V
RM
100
V
Repetitive peak reverse voltage
V
RRM
75
V
Working peak reverse voltage
V
RWM
75
V
DC blocking voltage
V
R
75
V
RMS Reverse voltage
V
R(RMS)
53
V
Forward current
I
F
300
mA
Average rectified current
half wave rectification
with resistive load and
f>50 MHz,
I
FAV
200
mA
Non repetitive peak forward surge current
t=1s
I
FSM
1
A
g
t=1
m
s
I
FSM
4
A
Power dissipation
l=4mm, T
L
=25
C
P
d
500
mW
Operating and storage temperature range
T
j
, T
stg
65...+175
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
l=4mm, T
L
=constant
R
thJA
300
K/W
1N914
Vishay Telefunken
2 (3)
Rev. 1, 26-Apr-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85622
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Forward voltage
I
F
=10mA
V
F
1
V
Breakdown Voltage
I
R
=100
m
A
V
R
100
V
Peak reverse current
V
R
=75V
I
R
5.0
m
A
V
R
=20V, T
j
=150
C
I
R
50
m
A
V
R
=20V
I
R
25
nA
Diode capacitance
V
R
=0, f=1MHz
C
D
4
pF
Reverse recovery time
I
F
=10mA to I
R
=1mA, V
R
=6V, R
L
=100
W
t
rr
4
ns
Characteristics (T
j
= 25
_
C unless otherwise specified)
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
I Forward Current ( mA
)
F
V
F
Forward Voltage ( V )
2.0
94 9171
1 N 4448
Scattering Limit
T
j
= 25
C
Figure 1. Forward Current vs. Forward Voltage
1
10
1
10
100
1000
I Reverse Current ( nA
)
R
V
R
Reverse Voltage ( V )
100
94 9098
Scattering Limit
T
j
= 25
C
Figure 2. Reverse Current vs. Reverse Voltage
Dimensions in mm
Cathode Identification
1.7 max.
0.55 max.
3.9 max.
26 min.
technical drawings
according to DIN
specifications
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3 g
26 min.
1N914
Vishay Telefunken
3 (3)
Rev. 1, 26-Apr-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85622
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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