2N4403
Vishay Semiconductors
formerly General Semiconductor
Document Number 88118
www.vishay.com
08-May-02
1
New Product
Small Signal Transistor (PNP)
Features
PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
As complementary type, the NPN transistor
2N4401 is recommended.
On special request, this transistor is also
manufactured in the pin configuration TO-18.
This transistor is also available in the SOT-23 case
with the type designation MMBT4403.
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E6/Bulk 5K per container, 20K/box
E7/4K per Ammo mag., 20K/box
Maximum Ratings & Thermal Characteristics
Ratings at 25C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
40
V
Collector-Base Voltage
V
CBO
40
V
Emitter-Base Voltage
V
EBO
5.0
V
Collector Current
I
C
600
mA
Power Dissipation
T
A
= 25C
P
tot
625
mW
Derate above 25C
5.0
mW/C
Power Dissipation
T
C
= 25C
P
tot
1.5
W
Derate above 25C
12
mW/C
Thermal Resistance Junction to Ambient Air
R
JA
200
C/W
Thermal Resistance Junction to Case
R
JC
83.3
C/W
Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
55 to +150
C
0.181 (4.6)
m
i
n
.
0.492
(12.5
)
0.1
81 (4
.6)
0.142 (3.6)
0.098 (2.5)
max.
0.022 (0.55)
Bottom
View
TO-226AA (TO-92)
Dimensions in inches
and (millimeters)
2N4403
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88118
2
08-May-02
Electrical Characteristics
(T
J
= 25C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V
CE =
1 V, I
C
= 0.1 mA
30
--
--
V
CE =
1 V, I
C
= 1 mA
60
--
--
DC Current Gain
h
FE
V
CE =
1 V, I
C
= 10 mA
100
--
--
--
V
CE =
2 V, I
C
= 150 mA
100
--
300
V
CE =
2 V, I
C
= 500 mA
20
--
--
Collector Cutoff Current
I
CEV
V
EB
= 0.4 V, V
CE
= 35 V
--
--
100
nA
Base Cutoff Current
I
BEV
V
EB
= 0.4 V, V
CE
= 35 V
--
--
100
nA
Collector-Emitter Saturation Voltage
(1)
V
CEsat
I
C
= 150 mA, I
B
= 15 mA
--
--
0.40
V
I
C
= 500 mA, I
B
= 50 mA
--
--
0.75
Base-Emitter Saturation Voltage
(1)
V
BEsat
I
C
= 150 mA, I
B
= 15 mA
0.75
--
0.95
V
I
C
= 500 mA, I
B
= 50 mA
--
--
1.30
Collector-Emitter Breakdown Voltage
V(
BR)CEO
I
C
= 1 mA, I
B
= 0
40
--
--
V
Collector-Base Breakdown Voltage
V(
BR)CBO
I
C
= 0.1 mA, I
E
= 0
40
--
--
V
Emitter-Base Breakdown Voltage
V(
BR)EBO
I
E
= 0.1 mA, I
C
= 0
5.0
--
--
V
Input Impedance
h
ie
V
CE
= 10 V, I
C
= 1 mA,
1.5
--
15
k
f = 1 kHz
Voltage Feedback Ratio
h
re
V
CE
= 10 V, I
C
= 1 mA,
0.1 10
-4
--
8 10
-4
--
f = 1 kHz
Current Gain-Bandwidth Product
f
T
V
CE
= 10 V, I
C
= 20 mA
200
--
--
MHz
f = 100 MHz
Collector-Base Capacitance
C
CB
V
CB
= 10 V, I
E
= 0,
--
--
8.5
pF
f = 1.0 MHz
Emitter-Base Capacitance
C
EB
V
EB
= 0.5 V, I
C
= 0
--
--
30
pF
f = 1.0 MHz
Small Signal Current Gain
h
fe
V
CE
= 10 V, I
C
= 1 mA
60
--
500
--
f = 1 kHz
Output Admittance
h
oe
V
CE
= 10 V, I
C
= 1 mA
1.0
--
100
S
f = 1 kHz
Notes:
(1) Pulse test: Pulse width
300
s - Duty cycle
2%
2N4403
Vishay Semiconductors
formerly General Semiconductor
Document Number 88118
www.vishay.com
08-May-02
3
Electrical Characteristics
(T
J
= 25C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Delay Time (see fig. 1)
t
d
-I
B1
= 15 mA, -I
C
= 150 mA,
--
--
15
ns
-V
CC
= 30 V, -V
EB
= 2 V
Rise Time (see fig. 1)
t
r
-I
B1
= 15 mA, -I
C
= 150 mA,
--
--
20
ns
-V
CC
= 30 V, -V
EB
= 2 V
Storage Time (see fig. 2)
t
s
-I
B1
= -I
B2
= 15 mA,
--
--
225
ns
-I
C
= 150 mA, -V
CC
= 30 V
Fall Time (see fig. 2)
t
f
-I
B1
= -I
B2
= 15 mA,
--
--
30
ns
-I
C
= 150 mA, -V
CC
= 30 V
1.0 to 100
s Duty Cycle - 2%
0
200
< 20 ns
-30V
+14 V
-16 V
+4 V
1.0 to 100
s Duty Cycle - 2%
0
C < 10 pF
S*
200
< 2 ns
-30V
+2 V
-16 V
+4 V
1k
1k
Scope rise time - 4ns
*Total shunt capacitance of test jig,
connectors and oscilloscope
C < 10 pF
S
*
Switching Time Equivalent Test Circuit
Figure 1 - Turn-On Time
Figure 2 - Turn-Off Time
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