ChipFind - документация

Электронный компонент: 2N5197

Скачать:  PDF   ZIP
2N5196/5197/5198/5199
Vishay Siliconix
Document Number: 70252
S-04031--Rev. D, 04-Jun-01
www.vishay.com
8-1
Monolithic N-Channel JFET Duals
PRODUCT SUMMARY
Part Number
V
GS(off)
(V)
V
(BR)GSS
Min (V)
g
fs
Min (mS)
I
G
Max (pA)
j
V
GS1
V
GS2
j
Max (mV)
2N5196
0.7 to 4
50
1
15
5
2N5197
0.7 to 4
50
1
15
5
2N5198
0.7 to 4
50
1
15
10
2N5199
0.7 to 4
50
1
15
15
FEATURES
BENEFITS
APPLICATIONS
D
Monolithic Design
D
High Slew Rate
D
Low Offset/Drift Voltage
D
Low Gate Leakage: 5 pA
D
Low Noise
D
High CMRR: 100 dB
D
Tight Differential Match vs. Current
D
Improved Op Amp Speed, Settling Time
Accuracy
D
Minimum Input Error/Trimming Requirement
D
Insignificant Signal Loss/Error Voltage
D
High System Sensitivity
D
Minimum Error with Large Input Signal
D
Wideband Differential Amps
D
High-Speed, Temp-Compensated,
Single-Ended Input Amps
D
High Speed Comparators
D
Impedance Converters
DESCRIPTION
The 2N5196/5197/5198/5199 JFET duals are designed for
high-performance differential amplification for a wide range of
precision test instrumentation applications. This series
features tightly matched specs, low gate leakage for accuracy,
and wide dynamic range with I
G
guaranteed at V
DG
= 20 V.
The hermetically-sealed TO-71 package is available with full
military processing (see Military Information and the
2N5545/5546/5547JANTX/JANTXV data sheet).
For similar products see the low-noise U/SST401 series, the
high-gain 2N5911/5912, and the low-leakage U421/423 data
sheets.
TO-71
Top View
G
1
S
1
D
1
G
2
D
2
S
2
1
2
3
6
5
4
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage
50 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
" from case for 10 sec.)
300
_
C
. . . . . . . . . . . . . . . . . .
Storage Temperature
65 to 200
_
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
55 to 150
_
C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation :
Per Side
a
250 mW
. . . . . . . . . . . . . . . . . . . . . . . .
Total
b
500 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 2 mW/
_
C above 85
_
C
b.
Derate 4 mW/
_
C above 85
_
C
2N5196/5197/5198/5199
Vishay Siliconix
www.vishay.com
8-2
Document Number: 70252
S-04031--Rev. D, 04-Jun-01
SPECIFICATIONS FOR 2N5196 AND 2N5197 (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N5196
2N5197
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
V
(BR)GSS
I
G
= 1
m
A, V
DS
= 0 V
57
50
50
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 20 V, I
D
= 1 nA
2
0.7
4
0.7
4
V
Saturation Drain Current
b
I
DSS
V
DS
= 20 V, V
GS
= 0 V
3
0.7
7
0.7
7
mA
V
GS
= 30 V, V
DS
= 0 V
10
25
25
pA
Gate Reverse Current
I
GSS
T
A
= 150
_
C
20
50
50
nA
V
DG
= 20 V, I
D
= 200
m
A
5
15
15
pA
Gate Operating Current
I
G
T
A
= 125
_
C
0.8
15
15
nA
Gate-Source Voltage
V
GS
V
DG
= 20 V, I
D
= 200
m
A
1.5
0.2
3.8
0.2
3.8
V
Dynamic
Common-Source
Forward Transconductance
g
fs
V
DS
= 20 V, V
GS
= 0 V
2.5
1
4
1
4
mS
Common-Source
Output Conductance
g
os
V
DS
= 20 V, V
GS
= 0 V
f = 1 kHz
2
50
50
m
S
Common-Source
Forward Transconductance
g
fs
V
DS
= 20 V, I
D
= 200
m
A
0.8
0.7
1.6
0.7
1.6
mS
Common-Source
Output Conductance
g
os
V
DS
= 20 V, I
D
= 200
m
A
f = 1 kHz
1
4
4
m
S
Common-Source
Input Capacitance
C
iss
V
DS
= 20 V, V
GS
= 0 V
3
6
6
Common-Source
Reverse Transfer Capacitance
C
rss
V
DS
= 20 V, V
GS
= 0 V
f = 1 MHz
1
2
2
pF
Equivalent Input Noise Voltage
e
n
V
DS
= 20 V, V
GS
= 0 V, f = 1 kHz
9
20
20
nV
/
Hz
Noise Figure
NF
V
DS
= 20 V, V
GS
= 0 V
f = 100 Hz, R
G
= 10 M
W
0.5
0.5
dB
Matching
Differential Gate-Source Voltage
|V
GS1
V
GS2
|
V
DG
= 20 V, I
D
= 200
m
A
5
5
mV
Gate-Source Voltage Differential
Change with Temperature
D
|V
GS1
V
GS2
|
D
T
V
DG
= 20 V, I
D
= 200
m
A
T
A
= 55 to 125
_
C
5
10
m
V/
_
C
Saturation Drain Current Ratio
I
DSS1
I
DSS2
V
DS
= 20 V, V
GS
= 0 V
0.98
0.95
1
0.95
1
Transconductance Ratio
g
fs1
g
fs2
V
DS
= 20 V, I
D
= 200
m
A
0.99
0.97
1
0.97
1
Differential Output Conductance
|g
os1
g
os2
|
V
DS
= 20 V, I
D
= 200
m
A
f = 1 kHz
0.1
1
1
m
S
Differential Gate Current
|I
G1
I
G2
|
V
DG
= 20 V, I
D
= 200
m
A , T
A
= 125
_
C
0.1
5
5
nA
Common Mode Rejection Ratio
c
CMRR
V
DG
= 10 to 20 V, I
D
= 200
m
A
100
dB
2N5196/5197/5198/5199
Vishay Siliconix
Document Number: 70252
S-04031--Rev. D, 04-Jun-01
www.vishay.com
8-3
SPECIFICATIONS FOR 2N5198 AND 2N5199 (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N5198
2N5199
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
V
(BR)GSS
I
G
= 1
m
A, V
DS
= 0 V
57
50
50
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 20 V, I
D
= 1 nA
2
0.7
4
0.7
4
V
Saturation Drain Current
b
I
DSS
V
DS
= 20 V, V
GS
= 0 V
3
0.7
7
0.7
7
mA
V
GS
= 30 V, V
DS
= 0 V
10
25
25
pA
Gate Reverse Current
I
GSS
T
A
= 150
_
C
20
50
50
nA
V
DG
= 20 V, I
D
= 200
m
A
5
15
15
pA
Gate Operating Current
I
G
T
A
=125
_
C
0.8
15
15
nA
Gate-Source Voltage
V
GS
V
DG
= 20 V, I
D
= 200
m
A
1.5
0.2
3.8
0.2
3.8
V
Dynamic
Common-Source
Forward Transconductance
g
fs
2.5
1
4
1
4
mS
Common-Source
Output Conductance
g
os
V
DS
= 20 V, V
GS
= 0 V, f = 1 kHz
2
50
50
m
S
Common-Source
Forward Transconductance
g
fs
V
DS
= 20 V, I
D
= 200
m
A
0.8
0.7
1.6
0.7
1.6
mS
Common-Source
Output Conductance
g
os
V
DS
= 20 V, I
D
= 200
m
A
f = 1 kHz
1
4
4
m
S
Common-Source Input Capacitance
C
iss
3
6
6
Common-Source
Reverse Transfer Capacitance
C
rss
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
1
2
2
pF
Equivalent Input Noise Voltage
e
n
V
DS
= 20 V, V
GS
= 0 V, f = 1 kHz
9
20
20
nV
/
Hz
Noise Figure
NF
V
DS
= 20 V, V
GS
= 0 V
f = 100 Hz, R
G
= 10 M
W
0.5
0.5
dB
Matching
Differential Gate-Source Voltage
|V
GS1
V
GS2
|
V
DG
= 20 V, I
D
= 200
m
A
10
15
mV
Gate-Source Voltage Differential
Change with Temperature
D
|V
GS1
V
GS2
|
D
T
V
DG
= 20 V, I
D
= 200
m
A
T
A
= 55 to 125
_
C
20
40
m
V/
_
C
Saturation Drain Current Ratio
I
DSS1
I
DSS2
V
DS
= 20 V, V
GS
= 0 V
0.97
0.95
1
0.95
1
Transconductance Ratio
g
fs1
g
fs2
V
DS
= 20 V, I
D
= 200
m
A
0.97
0.95
1
0.95
1
Differential Output Conductance
|g
os1
g
os2
|
V
DS
= 20 V, I
D
= 200
m
A
f = 1 kHz
0.2
1
1
m
S
Differential Gate Current
|I
G1
I
G2
|
V
DG
= 20 V, I
D
= 200
m
A , T
A
= 125
_
C
0.1
5
5
nA
Common Mode Rejection Ratio
c
CMRR
V
DG
= 10 to 20 V, I
D
= 200
m
A
97
dB
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NQP
b.
Pulse test: PW
v
300
m
s duty cycle
v
3%.
c.
This parameter not registered with JEDEC.
2N5196/5197/5198/5199
Vishay Siliconix
www.vishay.com
8-4
Document Number: 70252
S-04031--Rev. D, 04-Jun-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
5
0
5
4
3
2
1
4
2
1
0
0
30
20
10
40
50
3
2.6
2.2
1
3
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
V
GS(off)
Gate-Source Cutoff Voltage (V)
V
DG
Drain-Gate Voltage (V)
0.1 pA
10 pA
1 pA
I
DSS
@ V
DS
= 15 V, V
GS
= 0 V
g
fs
@ V
DG
= 15 V, V
GS
= 0 V
f = 1 kHz
g
fs
I
DSS
I
GSS
@ 125
_
C
I
GSS
@ 25
_
C
T
A
= 125
_
C
T
A
= 25
_
C
200
m
A
100 pA
1 nA
10 nA
100 nA
5
4
3
2
1
0
Output Characteristics
Output Characteristics
V
DS
Drain-Source Voltage (V)
V
DS
Drain-Source Voltage (V)
0.2 V
0.4 V
0.6 V
0.3 V
0.9 V
0.6 V
2.1 V
1.5 V
0.8 V
1.0 V
1.2 V
1.2 V
1.8 V
V
GS(off)
= 2 V
V
GS
= 0 V
5
4
3
2
1
0
V
GS
= 0 V
V
GS(off)
= 3 V
2
0
0.6
0.8
0.4
0.2
1
1.6
1.2
0.8
0.4
0
Output Characteristics
Output Characteristics
V
DS
Drain-Source Voltage (V)
V
DS
Drain-Source Voltage (V)
0.2 V
0.4 V
0.6 V
0.8 V
1.0 V
1.2 V
1.4 V
V
GS(off)
= 2 V
V
GS
= 0 V
2.5
2.0
1.5
1.0
0.5
0
0
0.6
0.8
0.4
0.2
1
V
GS
= 0 V
V
GS(off)
= 3 V
0.3 V
0.9 V
0.6 V
2.1 V
1.5 V
1.2 V
2.4 V
1.8 V
1.8
1.4
50
m
A
I
G
@ I
D
= 200
m
A
1.6 V
0
12
16
8
4
20
1.4 V
2.4 V
0
12
16
8
4
20
50
m
A
g
fs

Forward T
ransconductance (mS)
I
DS
S

Saturation Drain Current (mA)
I
G

Gate Leakage
I
D
Drain Current (mA)
I
D
Drain Current (mA)
I
D
Drain Current (mA)
I
D
Drain Current (mA)
2N5196/5197/5198/5199
Vishay Siliconix
Document Number: 70252
S-04031--Rev. D, 04-Jun-01
www.vishay.com
8-5
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
0.01
0.1
1
10
1
0
1.5
1.0
0.5
2.0
2.5
4
3
2
1
0
0.01
0.1
1
130
120
80
110
100
90
0.01
0.1
1
100
10
1
100
5
0.1
1
0.01
100
80
60
40
20
0
Transfer Characteristics
Gate-Source Differential Voltage
vs. Drain Current
Voltage Differential with Temperature
vs. Drain Current
Common Mode Rejection Ratio
vs. Drain Current
CMRR (dB)
V
GS
Gate-Source Voltage (V)
I
D
Drain Current (mA)
I
D
Drain Current (mA)
I
D
Drain Current (mA)
I
D
Drain Current (mA)
2N5196
T
A
= 55
_
C
125
_
C
V
GS(off)
= 2 V
V
DG
= 20 V
D
T
A
= 25 to 125
_
C
D
T
A
= 55 to 25
_
C
V
DG
= 20 V
T
A
= 25
_
C
5 10 V
V
GS(off)
= 3 V
Circuit Voltage Gain vs. Drain Current
2N5199
2N5196
2N5199
On-Resistance vs. Drain Current
I
D
Drain Current (mA)
0.01
0.1
1
1 k
800
600
400
200
0
V
GS(off)
= 2 V
A
V
+
g
fs
R
L
1
)
R
L
g
os
R
L
+
10 V
I
D
Assume V
DD
= 15 V, V
DS
= 5 V
V
DS
= 20 V
V
GS(off)
= 2 V
V
GS(off)
= 3 V
25
_
C
D
V
DG
= 10 20 V
(mV)
V
GS1
V
GS2
V/
_
C
()
t
D
D
m
V
GS1
V
GS2
V
GS1
V
GS2
D
V
DG
CMRR = 20 log
D
r
DS
(
on)

Drain-Source On-Resistance (
)
I
D
Drain Current (mA)
A
V

V
oltage Gain