BAS16
Vishay Telefunken
Rev. 1, 01-Apr-99
1 (4)
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FaxBack +1-408-970-5600
Document Number 85539
Silicon Epitaxial Planar Diode
Features
D
Ultra fast switching speed
D
Surface mount package ideally
suited for automatic insertion
D
High conductance
94 8550
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Non repetitive peak reverse voltage
V
RM
100
V
Repetitive peak reverse voltage
=Working peak reverse voltage
=DC Blocking voltage
V
RRM
=V
RWM
=V
R
75
V
Peak forward surge current
t
p
=1s
I
FSM
1
A
g
t
p
=1
m
s
I
FSM
2
A
Average forward current
half wave rectification with resistive
load and f
50 MHz, on ceramic
substrate 8mmx10mmx0.7mm
I
FAV
150
mA
Forward current
on ceramic substrate
8mmx10mmx0.7mm
I
F
300
mA
Power dissipation
on ceramic substrate
8mmx10mmx0.7mm
P
tot
350
mW
Junction and storage
temperature range
T
j
=T
stg
55...+150
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
on ceramic substrate
8mmx10mmx0.7mm
R
thJA
357
K/W
BAS16
Vishay Telefunken
Rev. 1, 01-Apr-99
2 (4)
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FaxBack +1-408-970-5600
Document Number 85539
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Forward voltage
I
F
=1mA
V
F
715
mV
g
I
F
=10mA
V
F
855
mV
I
F
=50mA
V
F
1
V
I
F
=150mA
V
F
1.25
V
Reverse current
V
R
=75V
I
R
1
m
A
V
R
=75V, T
j
=150
C
I
R
50
m
A
V
R
=25V, T
j
=150
C
I
R
30
m
A
Diode capacitance
V
R
=0, f=1MHz
C
D
4
pF
Reverse recovery time
I
F
=10mA to I
R
=1mA, V
R
=6V, R
L
=100
W
t
rr
6
ns
Characteristics (T
j
= 25
_
C unless otherwise specified)
I Forward Current ( mA
)
0.01
0.1
1
10
100
1000
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
Forward Voltage ( V )
14356
F
T
j
= 25
C
T
j
= 100
C
Figure 1. Forward Current vs. Forward Voltage
I Reverse Current ( nA
)
1
10
100
1000
10000
0
25
50
75
100 125 150 175 200
T
j
Junction Temperature (
C )
14357
V
R
= 20 V
R
Figure 2. Reverse Current vs. Junction Temperature
BAS16
Vishay Telefunken
Rev. 1, 01-Apr-99
4 (4)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85539
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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