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Электронный компонент: BAS19

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BAS19BAS21
Vishay Telefunken
Rev. 1, 01-Apr-99
1 (4)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85540
Surface Mount Switching Diode
Features
D
Silicon planar epitaxial high speed diode
D
For switching and general purpose applications
94 8550
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Working peak reverse voltage
BAS19
V
RWM
100
V
g
g
=DC Blocking voltage
BAS20
RWM
=V
R
150
V
BAS21
200
V
Repetitive peak reverse voltage
BAS19
V
RRM
120
V
g
BAS20
V
RRM
200
V
BAS21
V
RRM
250
V
Peak forward surge current
t=1
m
s
I
FSM
2.5
A
g
t=1s
I
FSM
0.5
A
Repetitive peak forward current
I
FRM
625
mA
Average forward current
t
p
<0.3ms
I
FAV
200
mA
Forward current
T
Case
=T
L
(8mm from Case)
=T
amb
I
F
400
mA
Power dissipation
T
Case
=T
L
(8mm from Case)
=T
amb
P
tot
250
mW
Junction and storage
temperature range
T
j
=T
stg
55...+150
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
R
thJA
500
K/W
BAS19BAS21
Vishay Telefunken
Rev. 1, 01-Apr-99
2 (4)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85540
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
I
F
=100mA
V
F
1.0
V
g
I
F
=200mA
V
F
1.25
V
Reverse current
V
R
=V
Rmax
I
R
100
nA
V
R
=V
Rmax
, T
j
= 150
C
I
R
100
m
A
Reverse breakdown voltage
I
R
=100
m
A, t
p
<0.3ms
BAS19
V
(BR)R
120
V
g
I
R
=100
m
A
BAS20
V
(BR)R
200
V
I
R
=100
m
A, V
R
<275V
BAS21
V
(BR)R
250
V
Reverse recovery time
I
F
=I
R
=10mA, R
L
=100
W
,
V
R
=6V to I
R
=1mA. R
L
=100
W
t
rr
50
ns
Diode capacitance
V
R
=0, f= 1MHz
C
D
5
pF
Dynamic forward resistance
I
F
=10mA
r
f
5
W
BAS19BAS21
Vishay Telefunken
Rev. 1, 01-Apr-99
3 (4)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85540
Dimensions in mm
14370
top view
Case: SOT23, plastic
Terminals: Solderable per MILSTD202, Method 208
Approx. weight: 0.008 grams
Marking: BAS19 K80,
BAS20 K81,
BAS21 K82
BAS19BAS21
Vishay Telefunken
Rev. 1, 01-Apr-99
4 (4)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85540
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423