BAT81S...BAT83S
Vishay Telefunken
Rev. 3, 01-Apr-99
1 (4)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85512
Schottky Barrier Diodes
Features
D
Integrated protection ring against
static discharge
D
Low capacitance
D
Low leakage current
D
Low forward voltage drop
D
Very low switching time
Applications
General purpose and switching
Schottky barrier diode
HFDetector
Protection circuit
Diode for low currents with a low supply voltage
Small battery charger
Power supplies
DC / DC converter for notebooks
94 9367
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Reverse voltage
BAT81S
V
R
40
V
g
BAT82S
V
R
50
V
BAT83S
V
R
60
V
Peak forward surge current
t
p
10ms
I
FSM
500
mA
Repetitive peak forward current
t
p
1s
I
FRM
150
mA
Forward current
I
F
30
mA
Junction temperature
T
j
125
C
Storage temperature range
T
stg
65...+150
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
l=4mm, T
L
=constant
R
thJA
320
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
I
F
=0.1mA
V
F
330
mV
g
I
F
=1mA
V
F
410
mV
I
F
=15mA
V
F
1
V
Reverse current
V
R
=V
Rmax
I
R
200
nA
Diode capacitance
V
R
=1V, f=1MHz
C
D
1.6
pF
BAT81S...BAT83S
Vishay Telefunken
Rev. 3, 01-Apr-99
2 (4)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85512
Characteristics (T
j
= 25
_
C unless otherwise specified)
0
2
4
6
8
10
12
14
25
50
75
100
125
150
T
j
Junction Temperature (
C )
15794
V
R
= 60 V
P
Reverse Power Dissipation ( mW
)
R
540K/W
P
R
Limit
@100%V
R
P
R
Limit
@80%V
R
R
thJA
=
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
0.1
1.0
10.0
100.0
1000.0
25
50
75
100
125
150
0.1
1.0
10.0
100.0
1000.0
25
50
75
100
125
150
T
j
Junction Temperature (
C )
15795
V
R
= V
RRM
m
I Reverse Current (
A
)
R
Figure 2. Reverse Current vs. Junction Temperature
0
0.5
1.0
1.5
2.0
I Forward Current (
A
)
V
F
Forward Voltage ( V )
15796
F
T
j
= 25
C
T
j
= 150
C
0.1
1
10
100
1000
0.01
Figure 3. Forward Current vs. Forward Voltage
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1.0
10.0
100.0
V
R
Reverse Voltage ( V )
15797
C Diode Capacitance ( pF )
D
f=1MHz
Figure 4. Diode Capacitance vs. Reverse Voltage
BAT81S...BAT83S
Vishay Telefunken
Rev. 3, 01-Apr-99
4 (4)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85512
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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