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Электронный компонент: BFP182T

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BFP182T/BFP182TW/BFP182TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
1 (6)
Document Number 85013
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 1 mA to 20 mA.
Features
D
Low power applications
D
Low noise figure
D
High transition frequency
2
1
3
13 653
4
13 566
BFP182TW Marking: W82
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
2
1
3
4
13 566
13 654
BFP182TRW Marking: WSG
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
13 579
2
1
4
3
94 9279
BFP182T Marking: 82P
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
BFP182T/BFP182TW/BFP182TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
2 (6)
Document Number 85013
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Collector-base voltage
V
CBO
15
V
Collector-emitter voltage
V
CEO
10
V
Emitter-base voltage
V
EBO
2
V
Collector current
I
C
35
mA
Total power dissipation
T
amb
60
C
P
tot
200
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
65 to +150
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
R
thJA
450
K/W
BFP182T/BFP182TW/BFP182TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
3 (6)
Document Number 85013
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max Unit
Collector cut-off current
V
CE
= 15 V, V
BE
= 0
I
CES
100
m
A
Collector-base cut-off current
V
CB
= 10 V, I
E
= 0
I
CBO
100
nA
Emitter-base cut-off current
V
EB
= 1 V, I
C
= 0
I
EBO
1
m
A
Collector-emitter breakdown voltage I
C
= 1 mA, I
B
= 0
V
(BR)CEO
10
V
Collector-emitter saturation voltage
I
C
= 15 mA, I
B
=1.5 mA
V
CEsat
0.1
0.4
V
DC forward current transfer ratio
V
CE
= 6 V, I
C
= 5 mA
h
FE
50
90
150
V
CE
= 8 V, I
C
= 20 mA
h
FE
100
Electrical AC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Transition frequency
V
CE
= 6 V, I
C
= 5 mA, f = 500 MHz
f
T
5.5
GHz
q
y
V
CE
= 8 V, I
C
= 20 mA, f = 500 MHz
f
T
7.5
GHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
0.3
pF
Collector-emitter capacitance
V
CE
= 8 V, f = 1 MHz
C
ce
0.2
pF
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
0.7
pF
Noise figure
V
CE
= 6 V, I
C
= 5 mA, Z
S
= Z
Sopt
,
f = 900 MHz
F
1.5
dB
V
CE
= 6 V, I
C
= 5 mA, Z
S
= Z
Sopt
,
f = 1.75 GHz
F
2.0
dB
Power gain
V
CE
= 8 V, I
C
= 20 mA, Z
S
= 50
W
,
Z
L
= Z
Lopt
, f = 900 MHz
G
pe
18
dB
V
CE
= 8 V, I
C
= 20 mA, Z
S
= 50
W
,
Z
L
= Z
Lopt
, f = 1.75 GHz
G
pe
12
dB
Transducer gain
V
CE
= 8 V, I
C
= 20 mA, Z
0
= 50
W
,
f = 900 MHz
S
21e
2
15
dB
BFP182T/BFP182TW/BFP182TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
4 (6)
Document Number 85013
Dimensions of BFP182TW in mm
96 12237
Dimensions of BFP182TRW in mm
96 12238
BFP182T/BFP182TW/BFP182TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
5 (6)
Document Number 85013
Dimensions of BFP182T in mm
96 12240