BFR193T/BFR193TW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 14-Feb-00
1 (4)
Document Number
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For lownoise, highgain applications such as power
amplifiers up to 2GHz and for linear broadband
amplifiers.
Features
D
Low noise figure
D
High transition frequency f
T
= 8 GHz
D
Excellent large-signal behaviour
13 581
2
3
1
94 9280
BFR193T Marking: RC
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
2
1
3
13 652
13 570
BFR193TW Marking: WRC
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Collector-base voltage
V
CBO
20
V
Collector-emitter voltage
V
CEO
12
V
Emitter-base voltage
V
EBO
2
V
Collector current
I
C
80
mA
Total power dissipation
T
amb
45
C
P
tot
420
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
65 to +150
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
mounted on glass fibre printed board
(25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
R
thJA
250
K/W
BFR193T/BFR193TW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 14-Feb-00
2 (4)
Document Number
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max Unit
Collector-emitter cut-off current
V
CE
= 20 V, V
EB
= 0
I
CES
100
m
A
Collector-base cut-off current
V
CB
= 10 V
I
CBO
100
nA
Emitter-base cut-off current
V
EB
= 1 V, I
C
= 0
I
EBO
1
m
A
Collector-emitter breakdown voltage I
C
= 1 mA
V
(BR)CEO
12
V
Collector-emitter saturation voltage
I
C
= 50 mA, I
B
= 5 mA
V
CEsat
0.1
0.5
V
DC forward current transfer ratio
V
CE
= 8 V, I
C
= 30 mA
h
FE
50
100
150
Electrical AC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Transition frequency
V
CE
= 8 V, I
C
= 50 mA, f = 1 GHz
f
T
6
8
GHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
0.6
1.0
pF
Collector-emitter capacitance
V
CE
= 10 V, f = 1 MHz
C
ce
0.25
pF
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
1.6
pF
Noise figure
Z
S
= Z
Sopt
,Z
L
=50
W
, f = 900 MHz,
V
CE
= 8 V, I
C
= 10 mA
F
1.2
dB
Noise figure
Z
S
= Z
Sopt
,Z
L
=50
W
, f = 2 GHz,
V
CE
= 8 V, I
C
= 10 mA
F
2.1
dB
Power gain
Z
S
= Z
Sopt
,Z
L
=50
W
, f = 900 MHz,
V
CE
= 8 V, I
C
= 30 mA
G
15
dB
Power gain
Z
S
= Z
Sopt
,Z
L
=50
W
, f = 2 GHz,
V
CE
= 8 V, I
C
= 30 mA
G
pe
9
dB
Transducer gain
Z
O
=50
W
, f = 900 MHz,
V
CE
= 8 V, I
C
= 30 mA
|S
2
|
13
dB
Transducer gain
Z
O
=50
W
, f = 2 GHz,
V
CE
= 8 V, I
C
= 30 mA
|S
21e
2
|
7
dB
Third order intercept point
at output
f = 900 MHz, V
CE
= 8 V, I
C
= 50 mA
IP
3
34
dBm
BFR193T/BFR193TW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 14-Feb-00
4 (4)
Document Number
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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