BPW43
Vishay Telefunken
1 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81523
Silicon PIN Photodiode
Description
BPW43 is a very high speed PIN photodiode in a stan-
dard T1
plastic package. Due to its waterclear
epoxy the device is sensitive to visible and infrared
radiation.
It features low capacitance and high speed even at low
supply voltages.
Features
D
Extra fast response times
D
Radiant sensitive area A=0.78mm
2
D
Standard T1
( 5 mm ) clear package
D
Angle of half sensitivity
=
25
D
Suitable for visible and near infrared radiation
94 8391
Applications
High speed photo detector
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
V
R
32
V
Power Dissipation
T
amb
x
25
C
P
V
215
mW
Junction Temperature
T
j
100
C
Storage Temperature Range
T
stg
25...+100
C
Soldering Temperature
t
x
3 s
T
sd
245
C
Thermal Resistance Junction/Ambient
R
thJA
350
K/W
BPW43
Vishay Telefunken
2 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81523
Basic Characteristics
T
amb
= 25
_
C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Breakdown Voltage
I
R
= 100
m
A, E = 0
V
(BR)
32
V
Reverse Dark Current
V
R
= 10 V, E = 0
I
ro
1
10
nA
Diode Capacitance
V
R
= 0 V, f = 1 MHz, E = 0
C
D
4
pF
V
R
= 5 V, f = 1 MHz, E = 0
C
D
1.5
pF
V
R
= 10 V, f = 1 MHz, E = 0
C
D
1.3
pF
Open Circuit Voltage
E
A
= 1 klx
V
o
320
mV
Short Circuit Current
E
A
= 1 klx
I
k
12
m
A
E
e
= 1 mW/cm
2
,
l
= 950 nm
I
k
6
m
A
Reverse Light Current
E
A
= 1 klx, V
R
= 5 V
I
ra
15
m
A
g
E
e
= 1 mW/cm
2
,
l
= 950 nm, V
R
= 5 V
I
ra
4
8
m
A
Angle of Half Sensitivity
25
deg
Wavelength of Peak Sensitivity
l
p
900
nm
Range of Spectral Bandwidth
l
0.5
550...1000
nm
Rise Time
V
R
= 10 V, R
L
= 50
W
,
l
= 820 nm
t
r
4
ns
Fall Time
V
R
= 10 V, R
L
= 50
W
,
l
= 820 nm
t
f
4
ns
Typical Characteristics (T
amb
= 25
_
C unless otherwise specified)
20
40
60
80
1
10
100
1000
I Reverse Dark Current ( nA
)
ro
T
amb
Ambient Temperature (
C )
100
94 8427
V
R
=10V
Figure 1. Reverse Dark Current vs. Ambient Temperature
0
20
40
60
80
0.6
0.8
1.0
1.2
1.4
I Relative Reverse Light Current
ra rel
T
amb
Ambient Temperature (
C )
100
94 8416
V
R
=5V
l=950nm
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
BPW43
Vishay Telefunken
3 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81523
0.1
1
10
100
0.01
0.1
1
I Reverse Light Current (
A
)
ra
E
e
Irradiance ( mW / cm
2
)
10
94 8428
m
V
R
=5V
l=950nm
Figure 3. Reverse Light Current vs. Irradiance
0.1
1
10
1
10
100
V
R
Reverse Voltage ( V )
100
94 8429
I Reverse Light Current (
A
)
ra
m
1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
l=950nm
Figure 4. Reverse Light Current vs. Reverse Voltage
0
2
4
6
8
0.1
1
10
C Diode Capacitance ( pF )
D
V
R
Reverse Voltage ( V )
100
94 8430
E=0
f=1MHz
Figure 5. Diode Capacitance vs. Reverse Voltage
350
550
750
950
0
0.2
0.4
0.6
0.8
1.0
1150
94 8435
S ( ) Relative Spectral Sensitivity
rel
l Wavelength ( nm )
l
Figure 6. Relative Spectral Sensitivity vs. Wavelength
0.4
0.2
0
0.2
0.4
S Relative Sensitivity
rel
0.6
94 8431
0.6
0.9
0.8
0
30
10
20
40
50
60
70
80
0.7
1.0
Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement
BPW43
Vishay Telefunken
5 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81523
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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