BUD616A
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 1, 20Jan99
1 (9)
Document Number 86501
Silicon NPN High Voltage Switching Transistor
Features
D S
imple-s
W
itch-
O
ff
T
ransistor (SWOT)
D HIGH SPEED technology
D Planar passivation
D 100 kHz switching rate
D Very low switching losses
D Very low dynamic saturation
D Very low operating temperature
D Optimized RBSOA
D High reverse voltage
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
94 8964
1
2
3
BUD616A
1 Emitter 2 Collector 3 Base
94 8965
2
1
3
BUD616A SMD
1 Emitter 2 Collector 3 Base
Absolute Maximum Ratings
T
case
= 25
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
450
V
g
V
CES
1000
V
Emitter-base voltage
V
EBO
12
V
Collector current
I
C
1.6
A
Collector peak current
I
CM
2.4
A
Base current
I
B
0.8
A
Base peak current
I
BM
1.2
A
Total power dissipation
T
case
50
C
P
tot
20
W
Junction temperature
T
j
150
C
Storage temperature range
T
stg
65 to +150
C
BUD616A
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 1, 20Jan99
2 (9)
Document Number 86501
Maximum Thermal Resistance
T
case
= 25
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Junction case
R
thJC
5
K/W
Electrical Characteristics
T
case
= 25
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Collector cut-off current
V
CES
= 1000 V
I
CES
50
m
A
V
CES
= 1000 V; T
case
= 125
C
I
CES
0.5
mA
Collector-emitter breakdown
voltage (figure 1)
I
C
= 300 mA; L = 125 mH;
I
measure
= 100 mA
V
(BR)CEO
450
V
Emitter-base breakdown voltage
I
E
= 1 mA
V
(BR)EBO
12
V
Collector-emitter saturation
I
C
= 0.25 A; I
B
= 65 mA
V
CEsat
0.2
V
voltage
I
C
= 0.8 A; I
B
= 250 mA
V
CEsat
0.4
V
Base-emitter saturation voltage
I
C
= 0.25 A; I
B
= 65 mA
V
BEsat
1
V
g
I
C
= 0.8 A; I
B
= 250 mA
V
BEsat
1.2
V
DC forward current transfer ratio
V
CE
= 5 V; I
C
= 0.2 mA
h
FE
17
V
CE
= 5 V; I
C
= 300 mA
h
FE
25
V
CE
= 5 V; I
C
= 480 mA
h
FE
12
V
CE
= 5 V; I
C
= 1.6 A
h
FE
4
BUD616A
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 1, 20Jan99
3 (9)
Document Number 86501
Switching Characteristics
T
case
= 25
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Resistive load (figure 2)
Turn on time
I
C
= 250 mA; I
B1
= 65 mA;
t
on
0.2
m
s
Storage time
C
B1
I
B2
= 130 mA; V
S
= 250 V
t
s
5
m
s
Fall time
t
f
0.4
m
s
Turn on time
I
C
= 0.8 A; I
B1
= 160 mA;
t
on
1
m
s
Storage time
C
B1
I
B2
= 0.4 A; V
S
= 250 V
t
s
2.5
m
s
Fall time
t
f
0.2
m
s
Inductive load (figure 3)
Storage time
I
C
= 250 mA; I
B1
= 65 mA;
I
130 mA; V
300 V;
t
s
5
m
s
Fall time
I
B2
= 130 mA; V
clamp
= 300 V;
L = 200
m
H
t
f
0.3
m
s
Storage time
I
C
= 0.8 A; I
B1
= 160 mA;
I
0 4 A; V
300 V;
t
s
2.5
m
s
Fall time
I
B2
= 0.4 A; V
clamp
= 300 V;
L = 200
m
H
t
f
0.15
m
s
+
3 Pulses
94 8863
t
p
T +
0.1
t
p
+ 10 ms
V
S2
+ 10 V
I
B
w
I
C
5
I
C
L
C
V
S1
+
V
(BR)CEO
I
(BR)R
100 m
W
I
C
V
CE
V
(BR)CEO
I
measure
0 to 30 V
Figure 1. Test circuit for V
(BR)CE0
BUD616A
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 1, 20Jan99
4 (9)
Document Number 86501
0
t
I
C
V
CE
R
C
V
CC
I
B
V
BB
R
B
I
B1
94 8852
+
(1)
(1) Fast electronic switch
I
B
I
B1
I
B2
I
C
0.9 I
C
0.1 I
C
t
t
s
t
off
t
f
t
r
t
d
t
on
Figure 2. Test circuit for switching characteristics resistive load
0
0.9 I
C
0.1 I
C
t
I
C
V
CE
V
CC
I
B
V
BB
R
B
I
B1
V
clamp
+
L
C
94 8853
(1)
(1) Fast electronic switch
(2) Fast recovery rectifier
(2)
I
B
I
B1
I
B2
I
C
t
t
r
t
s
Figure 3. Test circuit for switching characteristics inductive load
BUD616A
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 1, 20Jan99
5 (9)
Document Number 86501
Typical Characteristics (T
case
= 25_C unless otherwise specified)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
100
200
300
400
500
600
V
CE
Collector Emitter Voltage ( V )
13666
I Collector Current (
A
)
C
0.1 x I
C
< I
B2
< 0.5 x I
C
V
CEsat
< 2 V
Figure 4. V
CEW
Diagram
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
1
2
3
4
5
6
7
8
9
10
V
CE
Collector Emitter Voltage ( V )
13668
I Collector Current (
A
)
C
0.3A
I
B
=0.05A
0.1A
0.2A
0.15A
Figure 5. I
C
vs. V
CE
1
10
100
0.01
0.10
1.00
10.00
I
C
Collector Current ( A )
13670
5V
h Forward DC Current
T
ransfer
Ratio
FE
V
CE
=2V
10V
Figure 6. h
FE
vs. I
C
0.01
0.10
1.00
10.00
100.00
0
25
50
75
100
125
150
T
case
Case Temperature (
C )
13667
P
T
otal Power Dissipation (
W
)
tot
12.5K/W
25K/W
50K/W
R
thJA
=135K/W
5K/W
Figure 7. P
tot
vs.T
case
0.01
0.10
1.00
10.00
0.001
0.010
0.100
1.000
10.000
I
B
Base Current ( A )
13669
V
Collector Emitter Saturation
V
oltage (
V
)
CEsat
2A
1.5A
1A
0.5A
I
C
=0.2A
Figure 8. V
CEsat
vs. I
B
1
10
100
0.01
0.10
1.00
10.00
I
C
Collector Current ( A )
13671
h Forward DC Current
T
ransfer
Ratio
FE
V
CE
=2V
T
j
= 125
C
75
C
25
C
Figure 9. h
FE
vs. I
C
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