BUF7216
Vishay Telefunken
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FaxBack +1-408-970-5600
Rev. 1, 20Jan99
1 (8)
Document Number 86520
Silicon NPN High Voltage Switching Transistor
Features
D Simple-sWitch-Off Transistor (SWOT)
D HIGH SPEED technology
D Planar passivation
D 100 kHz switching rate
D Very low switching losses
D Very low dynamic saturation
D Very low operating temperature
D Optimized RBSOA
D High reverse voltage
Applications
Electronic lamp ballast circuits
14283
Absolute Maximum Ratings
T
case
= 25
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
800
V
g
V
CES
1600
V
Emitter-base voltage
V
EBO
11
V
Collector current
I
C
2
A
Collector peak current
I
CM
3
A
Base current
I
B
1
A
Base peak current
I
BM
1.5
A
Total power dissipation
T
case
25
C
P
tot
80
W
Junction temperature
T
j
150
C
Storage temperature range
T
stg
65 to +150
C
Maximum Thermal Resistance
T
case
= 25
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Junction case
R
thJC
1.56
K/W
BUF7216
Vishay Telefunken
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FaxBack +1-408-970-5600
Rev. 1, 20Jan99
2 (8)
Document Number 86520
Electrical Characteristics
T
case
= 25
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Collector cut-off current
V
CES
= 1600 V
I
CES
100
m
A
V
CES
= 1600 V; T
case
= 125
C
I
CES
1
mA
V
CBO
= 1600 V
I
CBO
100
m
A
V
CBO
= 1600 V; T
case
= 125
C
I
CBO
1
mA
Collector-emitter
breakdown voltage (figure 1)
I
C
= 300 mA; L = 125 mH;
I
measure
= 100 mA
V
(BR)CEO
800
V
Emitter cut-off current
V
EB
= 11 V
I
EBO
1
mA
Collector-emitter
I
C
= 0.35 A; I
B
= 85 mA
V
CEsat
0.35
0.6
V
saturation voltage
I
C
= 1 A; I
B
= 0.35 A
V
CEsat
1.2
V
Base-emitter saturation voltage
I
C
= 0.35 A; I
B
= 85 mA
V
BEsat
1
V
g
I
C
= 1 A; I
B
= 0.35 A
V
BEsat
1.1
V
DC forward current transfer ratio
V
CE
= 2 V; I
C
= 10 mA
h
FE
15
V
CE
= 2 V; I
C
= 0.4 A
h
FE
15
V
CE
= 2 V; I
C
= 1 A
h
FE
7
V
CE
= 5 V; I
C
= 2 A
h
FE
4
Dynamic saturation voltage
I
C
= 1 A; I
B
= 0.35 A; t = 1
m
s
V
CEsatdyn
10
15
V
y
g
I
C
= 1 A; I
B
= 0.35 A; t = 3
m
s
V
CEsatdyn
7
10
V
BUF7216
Vishay Telefunken
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Rev. 1, 20Jan99
3 (8)
Document Number 86520
Switching Characteristics
T
case
= 25
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Resistive load (figure 2)
Fall time
I
C
= 0.4 A; I
B1
= 50 mA;
I
B2
= 0.4 mA; V
S
= 250 V
t
f
0.65
0.95
m
s
Turn on time
I
C
= 0.35 A; I
B1
= 85 mA;
t
on
0.25
0.5
m
s
Storage time
C
B1
I
B2
= 175 mA; V
S
= 250 V
t
s
3.5
4.5
m
s
Fall time
t
f
0.25
0.35
m
s
Turn on time
I
C
= 1 A; I
B1
= 0.2 A;
t
on
0.4
0.7
m
s
Storage time
C
B1
I
B2
= 0.5 A; V
S
= 250 V
t
s
3
4
m
s
Fall time
t
f
0.2
0.3
m
s
Inductive load (figure 3)
Storage time
I
C
= 0.35 A; I
B1
= 85 mA;
I
175 mA; V
300 V;
t
s
3.2
4.5
m
s
Fall time
I
B2
= 175 mA; V
clamp
= 300 V;
L = 200
m
H; V
BE
= 5 V
t
f
0.2
0.25
m
s
Storage time
I
C
= 1 A; I
B1
= 0.2 A;
I
0 5 A; V
300 V;
t
s
3
3.5
m
s
Fall time
I
B2
= 0.5 A; V
clamp
= 300 V;
L = 200
m
H; V
BE
= 5 V
t
f
0.1
0.15
m
s
+
3 Pulses
94 8863
t
p
T +
0.1
t
p
+ 10 ms
V
S2
+ 10 V
I
B
w
I
C
5
I
C
L
C
V
S1
+
V
(BR)CEO
I
(BR)R
100 m
W
I
C
V
CE
V
(BR)CEO
I
measure
0 to 30 V
Figure 1. Test circuit for V
(BR)CE0
BUF7216
Vishay Telefunken
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Rev. 1, 20Jan99
4 (8)
Document Number 86520
0
t
I
C
V
CE
R
C
V
CC
I
B
V
BB
R
B
I
B1
94 8852
+
(1)
(1) Fast electronic switch
I
B
I
B1
I
B2
I
C
0.9 I
C
0.1 I
C
t
t
s
t
off
t
f
t
r
t
d
t
on
Figure 2. Test circuit for switching characteristics resistive load
0
0.9 I
C
0.1 I
C
t
I
C
V
CE
V
CC
I
B
V
BB
R
B
I
B1
V
clamp
+
L
C
94 8853
(1)
(1) Fast electronic switch
(2) Fast recovery rectifier
(2)
I
B
I
B1
I
B2
I
C
t
t
r
t
s
Figure 3. Test circuit for switching characteristics inductive load
BUF7216
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 1, 20Jan99
5 (8)
Document Number 86520
Typical Characteristics (T
case
= 25_C unless otherwise specified)
0
1
2
3
4
0
200
400
600
800
1000
V
CE
Collector Emitter Voltage ( V )
14296
I Collector Current (
A
)
C
0.1 x I
C
< I
B2
< 0.5 x I
C
V
CEsat
< 2 V
Figure 4.
0
0.5
1.0
1.5
2.0
2.5
0
2
4
6
8
10
12
V
CE
Collector Emitter Voltage ( V )
14254
I Collector Current (
A
)
C
0.1A
I
B
=0.025A
0.2A
0.15A
0.05A
Figure 5. I
C
vs. V
CE
1
10
100
0.01
0.10
1.00
10.00
I
C
Collector Current ( A )
13736
h Forward DC Current
T
ransfer
Ratio
FE
5V
V
CE
=2V
10V
Figure 6. h
FE
vs. I
C
0.01
0.10
1.00
10.00
100.00
0
25
50
75
100
125
150
T
case
Case Temperature (
C )
13734
P
T
otal Power Dissipation (
W
)
tot
12.5K/W
25K/W
50K/W
R
thJA
=85K/W
1.56K/W
Figure 7. P
tot
vs.T
case
0.01
0.10
1.00
10.00
0.001
0.010
0.100
1.000
10.000
I
B
Base Current ( A )
13735
V
Collector Emitter Saturation
V
oltage (
V
)
CEsat
I
C
=0.2A
2A
0.35A
1A
Figure 8. V
CEsat
vs. I
B
1
10
100
0.01
0.10
1.00
10.00
I
C
Collector Current ( A )
13737
h Forward DC Current
T
ransfer
Ratio
FE
V
CE
=2V
T
j
= 125
C
75
C
25
C
Figure 9. h
FE
vs. I
C
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