BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88549
www.vishay.com
27-Jun-03
1
Dual Ultrafast Soft Recovery Rectifiers
Reverse Voltage 100 to 200 V
Forward Current 10 A
Reverse Recovery Time 20ns
Features
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
High reverse energy capability
Excellent high temperature switching
High temperature soldering guaranteed: 250C/10
seconds at terminals
Glass passivated chip junction
Soft recovery characteristics
Mechanical Data
Case: JEDEC TO-220AB, ITO-220AB & TO-263AB
molded plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity: As marked Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
0.08
(2.032)
0.24
(6.096)
0.42
(10.66)
0.63
(17.02)
0.12
(3.05)
0.33
(8.38)
Mounting Pad
Layout
TO-263AB
Dimensions in inches
and (millimeters)
0.380 (9.65)
0.411 (10.45)
0.320 (8.13)
0.360 (9.14)
0.591 (15.00)
0.624 (15.85)
1
2
0.245 (6.22)
MIN
K
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.014 (0.36)
0.021 (0.53)
0.110 (2.79)
0.140 (3.56)
0.090 (2.29)
0.110 (2.79)
0.047 (1.19)
0.055 (1.40)
PIN 1
PIN 2
K - HEATSINK
0-0.01 (0-0.254)
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
1
3
PIN
2
0.060 (1.52)
0.405 (10.27)
0.383 (9.72)
0.191 (4.85)
0.171 (4.35)
0.600 (15.5)
0.580 (14.5)
0.560 (14.22)
0.530 (13.46)
0.037 (0.94)
0.027 (0.69)
0.140 (3.56)
0.130 (3.30)
0.350 (8.89)
0.330 (8.38)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.131 (3.39)
0.122 (3.08)
0.110 (2.80)
0.100 (2.54)
0.022 (0.55)
0.014 (0.36)
DIA.
DIA.
0.676 (17.2)
0.646 (16.4)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
PIN 2
PIN 1
PIN 3
ITO-220AB (BYQ28EF, UGF10 Series)
TO-220AB (BYQ28E, UG10 Series)
TO-263AB (BYQ28EB, UGB10 Series)
1
2
3
PIN
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
CASE
1.148 (29.16)
1.118 (28.40)
PIN 2
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.160 (4.06)
0.140 (3.56)
0.410 (10.41)
0.390 (9.91)
0.635 (16.13)
0.625 (15.87)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
PIN 1
PIN 3
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88549
2
27-Jun-03
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Parameter
Symbol
Value
Unit
Maximum instantaneous forward voltage per leg
(Note 4)
at I
F
= 10A,
T
J
= 25C
1.25
at I
F
= 5A,
T
J
= 25C
V
F
1.10
V
at I
F
= 5A,
T
J
= 150C
0.895
Maximum reverse current per leg
T
J
= 25C
10
at working peak reverse voltage
(Note 4)
T
J
= 100C
I
R
200
A
Maximum reverse recovery time per leg at
I
F
= 1.0A, di/dt = 100A/
s, V
R
= 30V, I
rr
= 0.1 I
RM
t
rr
25
ns
Maximum reverse recovery time per leg at
I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A
t
rr
20
ns
Maximum stored charge per leg
I
F
= 2A, di/dt = 20A/
s, V
R
= 30V, I
rr
= 0.1 I
RM
Q
rr
9
nC
Thermal Characteristics
(T
C
= 25C unless otherwise noted)
UG10
UGF10
UGB10
Parameter
Symbol
BYQ28E
BYQ28EF
BYQ28EB
Unit
Typical thermal resistance -- junction to ambient
R
JA
50
55
50
C/W
per leg
-- junction to case
R
JC
4.5
6.7
4.5
C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
4.9 mm (0.19")
(4) Pulse test: 300
s pulse width, 1% duty cycle
Maximum Ratings
(T
C
= 25C unless otherwise noted)
UG10BCT
UG10CCT
UG10DCT
Parameter
Symbol
BYQ28E-100 BYQ28E-150 BYQ28E-200
Unit
Maximum repetitive peak reverse voltage
V
RRM
100
150
200
V
Working peak reverse voltage
V
RWM
100
150
200
V
Maximum DC blocking voltage
V
DC
100
150
200
V
Maximum average forward rectified current Total device
10
at T
C
= 100C
Per leg
I
F(AV)
5
A
Peak forward surge current
8.3ms single half sine-wave superimposed
I
FSM
55
A
on rated load (JEDEC Method) per leg
Non-repetitive peak reverse current per leg
I
RSM
0.2
A
at t
p
= 100
s
Electrostatic discharge capacitor voltage,
Human body model: C = 250pF, R = 1.5k
V
C
8
KV
Operating junction and storage temperature range
T
J
, T
STG
40 to +150
C
RMS Isolation voltage (BYQ28EF, UGF types)
4500
(NOTE 1)
from terminals to heatsink with t = 1 second, RH
30%
V
ISOL
3500
(NOTE 2)
V
1500
(NOTE 3)
BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88549
www.vishay.com
27-Jun-03
3
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
I
F
Instantaneous F
orw
ard Current (A)
100
10
I
R
Instantaneous Re
v
erse Current (
A)
Typical Reverse Characteristics Per Leg
1.0
0.1
0.01
Forward Current Derating Curve
0
5
15
0
50
100
150
10
A
v
er
age F
orw
ard Current (A)
P
eak F
orw
ard Surge Current (A)
Number of Cycles at 60 H
Z
Maximum Non-Repetitive Peak
Forward Surge Current Per Leg
1
10
100
1
10
100
Case Temperature (
C)
1.0
10
100
1000
0.1
T
J
= 125
C
100
C
25
C
Resistive or Inductive Load
T
J
= 25
C
T
J
= 125
C
1
10
100
10
100
1
0.1
Reverse Voltage (V)
T
J
= 125
C
f = 1.0 MH
Z
V
sig
= 50mVp-p
0.2
0.4
0.8
1.4
0.6
1.0
1.2
Pulse Width = 300
s
1% Duty Cycle
T
C
= 105
C
8.3ms Single Half Sine-Wave
(JEDEC Method)
T
J
= 100
C
Reverse Switching
Characteristics Per Leg
0
50
25
50
75
100
125
10
20
30
Stored Charge/Re
v
erse Reco
v
e
r
y
Time
(nC/ns)
40
@5A, 50A/
s
@2A, 20A/
s
@2A, 20A/
s
@1A, 100A/
s
@5A, 50A/
s
20
100
40
60
80
Percent of Rated Peak Reverse Voltage (%)
Typical Junction Capacitance Per Leg
pF
J
unction Capacitance
Typical Instantaneous
Forward Characteristics Per Leg
Instantaneous Forward Voltage (V)
Junction Temperature (
C)
@1A, 100A/
s
t
rr
Q
rr
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