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Электронный компонент: BYT53A

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BYT53.
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 4, 24-Jun-98
1 (4)
Document Number 86030
Very Fast Silicon Mesa Rectifiers
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Low reverse current
D
Soft recovery characteristics
Applications
Very fast rectifiers and switches
Switched mode power supplies
Highfrequency inverter circuits
94 9539
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Reverse voltage
BYT53A
V
R
=V
RRM
50
V
g
=Repetitive peak reverse voltage
BYT53B
V
R
=V
RRM
100
V
BYT53C
V
R
=V
RRM
150
V
BYT53D
V
R
=V
RRM
200
V
BYT53F
V
R
=V
RRM
300
V
BYT53G
V
R
=V
RRM
400
V
Peak forward surge current
t
p
=10ms,
half sinewave
I
FSM
50
A
Average forward current
l=10mm, T
L
=25
C
I
FAV
1.9
A
Junction and storage temperature range
T
j
=T
stg
65...+175
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
l=10mm, T
L
=constant
R
thJA
45
K/W
on PC board with spacing 25mm
R
thJA
100
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
I
F
=1A
V
F
1.1
V
g
I
F
=1A, T
j
=175
C
V
F
0.9
V
Reverse current
V
R
=V
RRM
I
R
5
m
A
V
R
=V
RRM
, T
j
=150
C
I
R
200
m
A
Reverse recovery time
I
F
=0.5A, I
R
=1A, i
R
=0.25A
t
rr
50
ns
BYT53.
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 4, 24-Jun-98
2 (4)
Document Number 86030
Characteristics (T
j
= 25
_
C unless otherwise specified)
0
0
20
40
60
80
120
R
Therm. Resist. Junction /
Ambient ( K/W
)
thJA
l Lead Length ( mm )
94 9552
5
10
15
25
30
20
100
l
l
T
L
=constant
Figure 1. Max. Thermal Resistance vs. Lead Length
0
20
40
60
80
100
120
140
160
180
200
220
240
25
50
75
100
125
150
175
T
j
Junction Temperature (
C )
15770
V
R
= V
RRM
P
Reverse Power Dissipation ( mW
)
R
160K/W
100K/W
45K/W
R
thJA
=
BYT53B
BYT53F
BYT53D
BYT53G
BYT53A
BYT53C
Figure 2. Max. Reverse Power Dissipation vs.
Junction Temperature
1
10
100
1000
25
50
75
100
125
150
175
T
j
Junction Temperature (
C )
15771
V
R
= V
RRM
m
I Reverse Current (
A
)
R
Figure 3. Max. Reverse Current vs.
Junction Temperature
0
0.4
0.8
1.2
1.6
2.0
0
20
40
60
80 100 120 140 160 180
T
amb
Ambient Temperature (
C )
15769
I
A
verage
Forward
Current
(
A
)
FA
V
V
R
= V
R RM
half sinewave
R
thJA
=100K/W
PCB: d=25mm
R
thJA
=45K/W
l=10mm
Figure 4. Max. Average Forward Current vs.
Ambient Temperature
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
I Forward Current (
A
)
V
F
Forward Voltage ( V )
15768
F
T
j
= 25
C
T
j
= 175
C
0.01
0.1
1
10
0.001
Figure 5. Max. Forward Current vs. Forward Voltage
0
6
12
18
24
30
0.1
1
10
C Diode Capacitance ( pF )
D
V
R
Reverse Voltage ( V )
100
94 9456
T
j
=25
C
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
BYT53.
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 4, 24-Jun-98
3 (4)
Document Number 86030
Dimensions in mm
Cathode Identification
3.6 max.
0.82 max.
4.2 max.
Sintered Glass Case
SOD 57
Weight max. 0.5 g
technical drawings
according to DIN
specifications
94 9538
26 min.
26 min.
BYT53.
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 4, 24-Jun-98
4 (4)
Document Number 86030
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423