Pb-free
Available
NO (Source
1
)
COM
NC (Source
2
)
1
2
3
6
5
Top View
IN
V+
GND
4
SC-89
Pin 1
Ax
Device Marking: Ax
x = Date/Lot Traceability Code
DG2011
Vishay Siliconix
Document Number: 70102
S-50509--Rev. E, 21-Mar-05
www.vishay.com
1
Low-Voltage, Low r
ON
, Single SPDT Analog Switch
In SC-89 Package
FEATURES
D Low Voltage Operation
(1.8 V to 5.5 V)
D Low On-Resistance - r
ON
:
1.8 W @ 2.7 V
D Low Charge Injection
D Low Voltage Logic Compatible
D SC-89 Package (1.6 x 1.6 mm)
BENEFITS
D Reduced Power Consumption
D Simple Logic Interface
D High Accuracy
D Reduce Board Space
D Guaranteed 2-V Operation
APPLICATIONS
D Cellular Phones
D Communication Systems
D Portable Test Equipment
D Battery Operated Systems
D Sample and Hold Circuits
D ADC and DAC Applications
D Low Voltage Data Acquisition
Systems
DESCRIPTION
The DG2011 is a low on-resistance, single-pole/double-throw
monolithic CMOS analog switch. It is designed for low voltage
applications with guaranteed operation at 2 V. The DG2011 is
ideal for portable and battery powered equipment, requiring
high performance and efficient use of board space. In
additional to the low on-resistance (1.8 @ 2.7 V), charge
injection is less than 10 pC over the entire analog range.
The switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
The DG2011 is built on Vishay Siliconix's low voltage JI2
process. An epitaxial layer prevents latchup.
Break-before-make is guaranteed.
The DG2011 represents a breakthrough in packaging
development for analog switching products. The SC-89
package (1.6 x 1.6 mm
2
) also know as SOT-666 in the
industry reduces board spacing by approximately 40% while
obtaining performance comparable to SC-70 analog switch
devices available today.
As a committed partner to the community and the environment,
Vishay
Siliconix manufactures this product with the
lead (Pb)-free device terminations. For analog switching
products manufactured with 100% matte tin device
terminations, the lead (Pb)-free "--E3" suffix is being used as
a designator.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
Logic
NC
NO
0
ON
OFF
1
OFF
ON
COMMERCIAL ORDERING INFORMATION
Temp Range
Package
Part Number
SC-89 (SOT-666)
with Tape and Reel
DG2011DX-T1
-40 to 85C
SC-89 (SOT-666)
Lead (Pb)-Free
with Tape and Reel
DG2011DX-T1--E3
DG2011
Vishay Siliconix
www.vishay.com
2
Document Number: 70102
S-50509--Rev. E, 21-Mar-05
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+
-0.3 to +6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IN, COM, NC, NO
a
-0.3 to (V+ + 0.3 V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current (NO, NC, COM pins)
"150 mA
. . . . . . . . . . . . . . . . . . .
Peak Current
"300 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix)
-65 to 150C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Packages)
b
SC-89
c
172 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on NC, NO, or COM or IN exceeding V+ will be clamped by inter-
nal diodes. Limit forward diode current to maximum current ratings.
b.
All leads welded or soldered to PC Board.
c.
Derate 2.15 mW/_C above 70_C
SPECIFICATIONS (V+ = 2.0 V)
Test Conditions
Otherwise Unless Specified
Limits
-40 to 85_C
Parameter
Symbol
V+ = 2.0 V, V
IN
= 0.4 or 1.6 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full
0
V+
V
On-Resistance
r
ON
V+ = 2.0 V, V
COM
= 0.2 V/0.9 V
I
NO
, I
NC
= 20 mA
Room
Full
3.5
5.5
5.5
W
Switch Off Leakage Current
f
I
NO(off)
,
I
NC(off)
V+ = 2.2 V
Room
Full
-1
-10
1
10
Switch Off Leakage Current
f
I
COM(off)
V+ = 2.2 V
V
NO
, V
NC
= 0.5 V/1.5 V, V
COM
= 1.5 V/0.5 V
Room
Full
-1
-10
1
10
nA
Channel-On Leakage Current
f
I
COM(on)
V+ = 2.2 V, V
NO
, V
NC
= V
COM
= 0.5 V/1.5 V
Room
Full
-1
-10
1
10
Digital Control
Input High Voltage
V
INH
Full
1.5
V
Input Low Voltage
V
INL
Full
0.4
V
Input Capacitance
C
in
Full
4
pF
Input Current
I
INL
or I
INH
V
IN
= 0 or V+
Full
1
1
mA
Dynamic Characteristics
Turn-On Time
t
ON
Room
Full
75
110
113
Turn-Off Time
t
OFF
V
NO
or V
NC
= 1.5 V, R
L
= 300 W, C
L
= 35 pF
Room
Full
37
71
76
ns
Break-Before-Make Time
t
BBM
Room
1
37
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0 W
Room
7
pC
Off-Isolation
d
OIRR
R
L
= 50 W C
L
= 5 pF f = 1 MHz
Room
-62
dB
Crosstalk
d
X
TALK
R
L
= 50 W, C
L
= 5 pF, f = 1 MHz
Room
-69
dB
N
O
, N
C
Off Capacitance
d
C
NO(off)
,
C
NC(off)
V
IN
= 0 or V+, f = 1 MHz
Room
29
pF
Channel-On Capacitance
d
C
ON
V
IN
= 0 or V+, f = 1 MHz
Room
85
pF
Power Supply
Power Supply Range
V+
1.8
5.5
V
Power Supply Current
I+
V
IN
= 0 or V+
0.01
1.0
mA
DG2011
Vishay Siliconix
Document Number: 70102
S-50509--Rev. E, 21-Mar-05
www.vishay.com
3
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Limits
-40 to 85_C
Parameter
Symbol
V+ = 3 V, "10%, V
IN
= 0.4 or 2.0 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full
0
V+
V
On-Resistance
r
ON
V 2 7 V V
0 9 V/1 5 V
Room
Full
1.8
2.7
2.9
r
ON
Match
Dr
ON
V+ = 2.7 V, V
COM
= 0.9 V/1.5 V
I
NO
, I
NC
= 50 mA
Room
0.2
W
r
ON
Flatness
r
ON
Flatness
I
NO
, I
NC
= 50 mA
Room
0.2
0.5
Switch Off Leakage Current
I
NO(off)
,
I
NC(off)
V+ = 3.3 V, V
NO
, V
NC
= 1 V/3 V
Room
Full
-1
-10
1
10
Switch Off Leakage Current
I
COM(off)
V+ = 3.3 V, V
NO
, V
NC
= 1 V/3 V
V
COM
= 3 V/1 V
Room
Full
-1
-10
1
10
nA
Channel-On Leakage Current
I
COM(on)
V+ = 3.3 V, V
NO
, V
NC
= V
COM
= 1 V/3 V
Room
Full
-1
-10
1
10
Digital Control
Input High Voltage
V
INH
Full
1.6
V
Input Low Voltage
V
INL
Full
0.4
V
Input Capacitance
C
in
Full
4
pF
Input Current
I
INL
or I
INH
V
IN
= 0 or V+
Full
1
1
mA
Dynamic Characteristics
Turn-On Time
t
ON
Room
Full
45
75
77
Turn-Off Time
t
OFF
V
NO
or V
NC
= 2.0 V, R
L
= 300 W, C
L
= 35 pF
Room
Full
29
59
62
ns
Break-Before-Make Time
t
BBM
Room
1
16
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0 W
Room
2
pC
Off-Isolation
d
OIRR
R
L
= 50 W C
L
= 5 pF f = 1 MHz
Room
-62
dB
Crosstalk
d
X
TALK
R
L
= 50 W, C
L
= 5 pF, f = 1 MHz
Room
-68
dB
N
O
, N
C
Off Capacitance
d
C
NO(off)
,
C
NC(off)
V
IN
= 0 or V+, f = 1 MHz
Room
28
pF
Channel-On Capacitance
d
C
ON
V
IN
= 0 or V+, f = 1 MHz
Room
84
pF
Power Supply
Power Supply Range
V+
1.8
5.5
V
Power Supply Current
I+
V
IN
= 0 or V+
0.01
1.0
mA
Power Consumption
P
C
V
IN
= 0 or V+
3.3
mW
Notes:
a.
Room = 25C, Full = as determined by the operating suffix.
b.
Typical values are for design aid only, not guaranteed nor subject to production testing.
c.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d.
Guarantee by design, nor subjected to production test.
e.
V
IN
= input voltage to perform proper function.
f.
Guaranteed by 5-V leakage testing, not production tested.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
DG2011
Vishay Siliconix
www.vishay.com
4
Document Number: 70102
S-50509--Rev. E, 21-Mar-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-250
-200
-150
-100
-50
0
50
100
150
200
250
0
1
2
3
4
5
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
r
ON
vs. V
COM
and Supply Voltage
r
ON
vs. Analog Voltage and Temperature
V
COM
- Analog Voltage (V)
V
COM
- Analog Voltage (V)
Temperature (_C)
Input Switching Frequency (Hz)
V+ = 2.0 V
I
S
= 20 mA
r
ON
-
On-Resistance (
)
I+
-
Supply Current (pA)
I+
-
Supply Current (A)
Supply Current vs. Input Switching Frequency
A: 85_C
B: 25_C
C: -40_C
r
ON
-
On-Resistance (
)
Temperature (_C)
V
COM
, V
NO
, V
NC
, - Analog Voltage (V)
Leakage Current (pA)
V+ = 5.0 V
V+ = 5.0 V
Leakage Current (pA)
Supply Current vs. Temperature
V+ = 5.0 V
V
IN
= 0 V
1
10
100
1000
10000
Leakage vs. Analog Voltage
1
10
100
1000
10000
I
ON(off)
/I
NC(off)
I
COM(on)
I
COM(off)
I
COM(on)
V+ = 3.0 V
I
S
= 50 mA
V+ = 5.0 V
I
S
= 100 mA
T = 25_C
V+ = 2.0 V
I
S
= 20 mA
V+ = 3.0 V
I
S
= 50 mA
A
B
C
A
B
C
B
C
V+ = 3.0 V
I
S
= 50 mA
V+ = 5.0 V
I
S
= 100 mA
Leakage Current vs. Temperature
100
1 k
10 k
100 k
1 M
10 M
100 M
100 pA
1 mA
10 mA
100 mA
1 mA
10 mA
1 nA
10 nA
100 nA
-60
-40
-20
0
20
40
60
80
100
-60
-40
-20
0
20
40
60
80
100
I
COM(off)
I
ON(off)
/I
NC(off)
V+ = 5.0 V
A
DG2011
Vishay Siliconix
Document Number: 70102
S-50509--Rev. E, 21-Mar-05
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
V
COM
- Analog Voltage (V)
0
10
20
30
40
50
60
70
80
90
-60
-40
-20
0
20
40
60
80
100
-30
-20
-10
0
10
20
30
0
1
2
3
4
5
6
Switching Time vs. Temperature and Supply Voltage
Charge Injection vs. Analog Voltage
Temperature (_C)
t
ON
V+ = 2 V
t
ON
, t
OFF
,
-
Switchint T
ime (ns)
V+ = 2 V
Q
-
Charge Injection (pC)
V+ = 5.0 V
R
L
= 50 W
OIRR
X
TALK
100 K
1 M
t
ON
V+ = 3 V
t
OFF
V+ = 2 V
t
OFF
V+ = 3 V
t
OFF
V+ = 5 V
Frequency (Hz)
LOSS
10 M
100 M
1 G
V+ = 3 V
V+ = 5 V
Switching Threshold vs. Supply Voltage
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
7
V+ - Supply Voltage (V)
V
T
-
Switchint Threshold (V)
Insertion Loss, Off-Isolation, Crosstalk
vs. Frequency
LOSS, OIRR, X
TL
A
K
(dB)
t
ON
V+ = 5 V
10
0
0
-10
-20
-50
-40
-30
-60
-70
-80
-90
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